| More News | Teaser | NewsID | NewsSection | Title | Text | Announced | AnnouncedMMM | Picture | PicturePath | WebLink | WebLinkText |
| Power Solutions to support Japan’s accelerating AI-driven Data Centre Growth | Technology group Wärtsilä and Tokyo Gas Engineerin... | 13990 | Industry News | Power Solutions to support Japan’s accelerating AI-driven Data Centre Growth | Technology group Wärtsilä and Tokyo Gas Engineering Solutions Co (TGES) have signed a Memorandum of Understanding (MoU) to jointly evaluate power supply solutions for data centres in Japan. The Memorandum of Understanding between Wärtsilä and TGES aims to establish a framework for jointly evaluating gas- or dual-fuel engine-based power generation solutions for selected data centre opportunities currently under development by TGES in Japan. Under the MoU, the two companies will cooperate in developing initial technical concepts and establishing performance parameters and in assessing the feasibility of selected projects. Wärtsilä is a provider of on-site power to data centre projects. | 17.09.2026 12:00:00 | Sep | news_2026-10-01_7.png | \images\news_2026-10-01_7.png | https://www.wartsila.com/media/news/17-09-2026-wartsila-and-tges-to-evaluate-power-solutions-to-support-japan-s-accelerating-ai-driven-data-centre-growth-3791059 | wartsila.com |
| Strategic Partnership across Semiconductor Manufacturing, Technology and Innovation | Nexperia and Tata Electronics have started a strat... | 13989 | Industry News | Strategic Partnership across Semiconductor Manufacturing, Technology and Innovation | Nexperia and Tata Electronics have started a strategic partnership spanning semiconductor wafer manufacturing, assembly and test, technology collaboration, and innovation. The partnership establishes a framework for long-term cooperation across multiple stages of the semiconductor value chain and supports the growth ambitions of both companies. The partnership is structured around three areas: Front-end wafer fabrication, back-end assembly and test as well as technology and ecosystem development. As part of the front-end manufacturing collaboration, Nexperia and Tata Electronics are laying the groundwork for the production of Nexperia's MOSFET portfolio at Tata Electronics' upcoming 300mm semiconductor fab in Dholera, Gujarat. In parallel, the partnership also includes collaboration on semiconductor assembly and test of Nexperia’s discrete semiconductor products at Tata Electronics’ packaging facility in Jagiroad, Assam. The alliance reflects the companies’ shared ambition to build a long-term manufacturing partnership that enhances manufacturing flexibility, strengthens supply chain resilience, and establishes scalable production pathways to support Nexperia’s future growth. Tata Electronics is building India’s first commercial semiconductor fab in Dholera, Gujarat, and the first indigenous semiconductor assembly and test facility in Jagiroad, Assam, with a combined investment of USD 14 billion, to serve global customers across critical sectors. | 17.09.2026 11:00:00 | Sep | news_2026-10-01_6.png | \images\news_2026-10-01_6.png | https://www.nexperia.com/about/news-events/press-releases/Nexperia-and-Tata-Electronics-announce-strategic-partnership-across-semiconductor-manufacturing-technology-and-innovation | nexperia.com |
| Dual Channel Gate Driver | Infineon Technologies introduces the EiceDRIVER&tr... | 13994 | Product Release | Dual Channel Gate Driver | Infineon Technologies introduces the EiceDRIVER™ 2EDL6014AC-G2D, a 120 V junction-isolated dual channel floating output gate driver engineered for high-density silicon power designs in AI datacenter applications. Housed in a WQFN-12 package measuring 2.2 mm x 2.2 mm, the device addresses the growing demand for power conversion solutions that deliver higher server rack density without sacrificing reliability or thermal performance. The 2EDL6014AC-G2D supports dual high-side, dual low-side, and half-bridge configurations, making it suitable across the switched-capacitor and multilevel topologies increasingly adopted in next-generation AI server power architectures. The 2EDL6014AC-G2D provides two completely independent floating output gate drivers, each capable of driving a high-side MOSFET operating at up to 120 V. Full 4 A source and 6 A sink current driving capability takes care of the switching performance under demanding load conditions. Separate INA and INB input pins enable independent control of both channels, with integrated deglitch filtering for improved noise immunity in high-density PCB environments. The input stage is 3.3 V and 5 V logic compatible and can be directly connected to microcontroller ground to maximize signal integrity. Undervoltage lockout (UVLO) on both floating output supplies forces the corresponding outputs low in the event of insufficient supply voltage, supporting safe system startup. An exposed pad provides low thermal impedance, improving heat dissipation under sustained heavy loads, a characteristic directly relevant to the continuous high-utilization operating profiles of AI inference and training infrastructure. Applications include solid-state transformers and circuit breakers, power supply and battery backup units, intermediate bus converters, and second-stage DC conversion power modules. | 17.09.2026 09:30:00 | Sep | news_2026-10-01_11.jpg | \images\news_2026-10-01_11.jpg | https://www.infineon.com/technology-news/2026/inftn202609-139 | infineon.com |
| Distribution Agreement with Current Sensor Company | Avnet Silica announced a distribution agreement wi... | 13984 | Industry News | Distribution Agreement with Current Sensor Company | Avnet Silica announced a distribution agreement with LEM. Under the agreement, Avnet Silica will offer LEM’s portfolio of PCB-mounted and module-mounted current sensors, covering currents from below 1 A up to 42 kA, voltage sensors for applications up to 6.4 kV, and Rogowski coil solutions for grid monitoring and instrumentation. As electrification raises the performance and safety demands placed on power systems, accurate current and voltage measurement is becoming increasingly important to engineers. LEM provides a range of galvanically isolated sensing technologies for high-current and high-voltage applications, supporting precise system control, fault and overload detection, and energy management. LEM’s sensing solutions are designed for applications across automotive, e-mobility and EV charging, data centres, energy, industrial automation and smart infrastructure. | 17.09.2026 06:00:00 | Sep | news_2026-10-01_1.jpg | \images\news_2026-10-01_1.jpg | https://my.avnet.com/wcm/connect/ca9b2830-fdbb-4fad-a1f0-5b81061f3b73/avs-lem-sensing-portfolio-2026.pdf?MOD=AJPERES&ContentCache=NONE&CACHE=NONE&CVID=q2LP-mb | avnet.com |
| 60 V Dual Power MOSFETs | Taiwan Semiconductor introduces a family of automo... | 13996 | Product Release | 60 V Dual Power MOSFETs | Taiwan Semiconductor introduces a family of automotive-grade power MOSFETs to its TQM Series. Available in a PDFN56UD, the 60 V dual n-channel devices support drop-in pin compatibility with other commonly used package types. The devices’ 5 mm × 6 mm packaging with heat-spreader contacts enables drain currents of 40 A and an R<sub>DS(ON)</sub> of 13 mΩ. Additionally, their wettable flank connections are suited for automated placement. TSC’s 60 V dual power PDFN56UD MOSFETs are suited for applications like H-bridge and half-bridge rectifiers, motor/actuator controls and solenoid drives. All are produced to meet AEC-Q standards, and documentation for the production part approval process (PPAP) can be provided. | 15.09.2026 11:30:00 | Sep | news_2026-10-01_13.png | \images\news_2026-10-01_13.png | https://www.taiwansemi.com/en/product-filter/?category=automotive-mosfets-21 | taiwansemi.com |
| MOSFET with wide-SOA for Automotive Safety Functions and Protection Circuits | ROHM has developed the RS4P063BPHZG, a 100 V MOSFE... | 13995 | Product Release | MOSFET with wide-SOA for Automotive Safety Functions and Protection Circuits | ROHM has developed the RS4P063BPHZG, a 100 V MOSFET optimized for automotive safety functions and protection circuits. The device achieves a wide-SOA (Safe Operating Area) across a broad voltage range in the standard HPLF5060 (5060-size) package widely used in automotive applications. By incorporating a design that effectively suppresses secondary breakdown, it delivers approximately 5 times the SOA tolerance of standard equivalent-sized products under V<sub>DS</sub> = 100 V and P<sub>W</sub> = 100 μs. This contributes to greater reliability in automotive applications subject to momentary high-power loads, including airbag inflator ignition circuits and seatbelt pretensioner drive circuits. ROHM is developing automotive Wide-SOA MOSFETs in the HPLF8080 (8.0 mm × 8.0 mm) and TOLG (TO-Leaded with Gullwing, 9.9 mm × 11.7 mm) packages as well. | 15.09.2026 10:30:00 | Sep | news_2026-10-01_12.jpg | \images\news_2026-10-01_12.jpg | https://www.rohm.com/news-detail?news-title=2026-09-15_news_mosfet&defaultGroupId=false | rohm.com |
| Munich Oktoberfest: Commercial Battery Storage Systems solve Power Grid Capacity Issues at “Tents” | The world’s largest public festival has become inc... | 13988 | Industry News | Munich Oktoberfest: Commercial Battery Storage Systems solve Power Grid Capacity Issues at “Tents” | The world’s largest public festival has become increasingly electrified since Russia’s first attack of Ukraine. However, the physical power grid infrastructure on site is reaching its limits. Munich’s municipal utility company, Stadtwerke München (SWM), could only further increase capacity at the medium-voltage level at disproportionate cost. This year SWM ensures the reliable operation of the large Pschorr-Bräurosl and Löwenbräu festival “tents” (halls) with three commercial battery storage systems supplied by the TESVOLT. A large festival tent is provided with a grid connection capacity of around 420 kW by SWM, but actual demand can surge to well over 500 kW during peak periods. At those moments, the grid connection is operating under continuous overload. The appetite for electricity at the Theresienwiese has multiplied within a short period of time. In addition to the move away from gas since the start of Russia's war of aggression against Ukraine, new and stricter municipal emissions regulations accelerate the transition to electric-powered systems. As even small food stalls are now required to comply with extensive regulations governing the use of gas, tent operators can save money by switching to fully electric kitchens, avoiding the installation of costly exhaust gas systems and monitoring equipment. At the same time, comfort levels are increasing. The patio heaters in outdoor areas alone now require up to 150 kW per tent. Particularly in cooler weather, peak loads rise significantly, as the heaters consume large amounts of electricity. This power is now supplied decentrally by the battery storage systems, reducing the strain on the tents’ grid connections. | 15.09.2026 10:00:00 | Sep | news_2026-10-01_5.png | \images\news_2026-10-01_5.png | https://www.tesvolt.com/en/press/munich-oktoberfest-tesvolt-commercial-battery-storage-systems-solve-power-grid-capacity-issues-at-festival-tents.html | tesvolt.com |
| Fully regenerative Dynamic Test System for 800 V AI Data Center Power | With the EA-ELR 21000 Tektronix introduces a dynam... | 13993 | Product Release | Fully regenerative Dynamic Test System for 800 V AI Data Center Power | With the EA-ELR 21000 Tektronix introduces a dynamic test system, which acts as an auto-ranging, high-dynamic electronic load test system built on a fully regenerative architecture for validating the ±400 V and 800 V DC power architectures emerging in AI data centers. Rather than dissipating absorbed test energy as heat, the system returns it to the grid with up to 95 % regenerative efficiency, helping manufacturers conduct sustained high-power validation with less demand on lab power and cooling infrastructure. The system is built around the EA-ELR 21000-80 4U HS, a 30 kW regenerative electronic load module rated for up to 1,000 V and up to 80 A. The EA-ELR 21000 Dynamic Test System delivers up to 12 A/μs at 240 kW of current slew rate to emulate the rapid load transitions that challenge 800 V power shelves and power racks. It provides up to 1.92 MW of modular test capacity across up to eight racks and 64 loads, expanding in 30 kW increments. Each rack delivers up to 240 kW in a 0.6 m<sup>2</sup> footprint. The EA-ELR 21000-80 4U HS is rated for up to 1,000 V, 80 A and 30 kW in 4U. Integrated waveform generation supports repeatable load profiles, while coordinated controls enable multiple loads to operate as one synchronized test system. The modular architecture also allows to service individual modules without disrupting the entire system. The EA-ELR 21000 is also designed for solid-state transformers that convert medium-voltage AC power for high-power DC infrastructure. | 15.09.2026 08:30:00 | Sep | news_2026-10-01_10.jpg | \images\news_2026-10-01_10.jpg | https://www.tek.com/en/news/tektronix-unveils-regenerative-test-system-for-800v-ai-data-center-power | tek.com |
| 140 W USB-C Power Delivery Reference Design | Eggtronic introduced a 140 W USB-C Power Delivery ... | 13998 | Product Release | 140 W USB-C Power Delivery Reference Design | Eggtronic introduced a 140 W USB-C Power Delivery AC/DC reference platform for next-generation premium laptops and high-performance devices. This reference design is developed based on Renesas’ high-voltage GaN transistors combining Eggtronic's EPIC™ combo controller with Renesas' high-voltage GaN device, the TP70H150G4LSG (700 V, 150 mΩ R<sub>DS(on)</sub>). Unlike conventional high-power USB-C adapters that rely on costly LLC, Asymmetrical Half-Bridge (AHB), or Active Clamp Flyback (ACF) topologies, this reference design achieves efficiencies approaching 96 % while maintaining the bill of materials cost of a traditional QR flyback converter. The platform also delivers 94.5 % efficiency at 90 V<sub>AC</sub> input enabling compliance with the latest DOE Level VII energy efficiency requirements. At the heart of the solution is Eggtronic's EPIC combo controller, which integrates major control function into a single device, including totem pole Power Factor Correction (PFC), isolated primary-side regulation, synchronous rectification, proprietary low-latency isolated communication and USB Power Delivery protocol management. The platform's Totem Pole PFC overcomes two of the most common limitations of conventional implementations, EMI performance and light-load efficiency. The PFC stage feeds Eggtronic's proprietary QuarEgg™ regenerative flyback architecture, which utilizes a single primary-side switch to achieve higher efficiency and lower system cost than LLC, AHB, and ACF converters while maintaining the simplicity and economics of a QR flyback design. | 14.09.2026 13:30:00 | Sep | news_2026-10-01_15.jpg | \images\news_2026-10-01_15.jpg | https://www.eggtronic.com/eggtronic-introduces-high-efficiency-140w-usb-c-power-delivery-reference-design-powered-by-renesas-gan-transistors/ | eggtronic.com |
| Thermoelectric Generators | Same Sky® (formerly CUI Devices) and its Therm... | 14000 | Product Release | Thermoelectric Generators | Same Sky® (formerly CUI Devices) and its Thermal Management Group expanded its thermoelectric generator (TEG) modules product line. Utilizing the temperature difference between the hot and cold side of the module to generate usable power, the SPG family of thermoelectric generators now offers output power up to 27.3 W in expanded package sizes from 30 x 30 mm<sup>2</sup> to 80 x 80 m mm<sup>2</sup> m with profiles as of e.g. 3.5 mm. They are suited for applications where waste heat is present, like industrial processes, to recover energy that would otherwise be lost. These TEG modules feature silicone sealing, continuous maximum hot side temperatures up to 300 °C, and graphite pad options for a simplified thermal interface. Additional specifications measured under conditions (T<sub>h</sub> = 300 °C / T<sub>c</sub> = 30 °C) include an open circuit voltage of 8 to 17.7 V<sub>DC</sub>, a matched load resistance of 0.83 to 5.7 Ω, a matched load output voltage of 4 to 8.8 V with a matched load output current of 1 to 5.7 A. The heat flow across the module is 90 to 525 W, while the heat flow density is 6.2 to 13.2 W/cm<sup>2</sup>. | 09.09.2026 15:30:00 | Sep | news_2026-10-01_17.jpg | \images\news_2026-10-01_17.jpg | https://www.sameskydevices.com/news/press-releases/same-sky-expands-thermoelectric-generators-product-line | sameskydevices.com |
| Battery Cells provide more Energy at the same Weight | Together with partners from research and industry,... | 13987 | Industry News | Battery Cells provide more Energy at the same Weight | Together with partners from research and industry, the Fraunhofer Institute for Solar Energy Systems ISE has modified the structure of battery electrodes so that the battery cells can store 10 to 15 percent more energy at the same weight. They achieved this by more than tripling the coating thickness of the battery electrodes - for example, in lithium-ion batteries - which simultaneously reduces the number of current collectors in the battery cell. The research team implemented the new electrode architecture in lithium-ion pouch cells manufactured using industry-standard processes. Furthermore, they successfully applied the concept to zinc-ion and sodium-ion battery cells. Normally, the anode and cathode consist of many thin, alternating layers of electrode coating and current collectors. Fraunhofer ISE has managed to increase the thickness of the electrode coating from the previously standard 100 to 200 μm to up to 800 μm, thereby significantly reducing the number of current collectors required. As a result, there is now much more space for active material, which increases the energy density by 10 to 15 percent, depending on the battery type and design. The research team initially validated the new electrode architecture for zinc-ion, sodium-ion, and lithium-ion batteries experimentally using small battery cells in the laboratory. For lithium-ion batteries, they also manufactured prototypes of pouch battery cells with this electrode structure on a semi-automated production line in the cleanroom of the Fraunhofer ISE Battery Materials and Cell Production Lab. The battery electrodes are PFAS-free and are manufactured without the use of toxic solvents. | 09.09.2026 09:00:00 | Sep | news_2026-10-01_4.jpg | \images\news_2026-10-01_4.jpg | https://www.ise.fraunhofer.de/en/press-media/press-releases/2026/more-energy-at-the-same-weight-fraunhofer-ise-optimizes-battery-cells.html | ise.fraunhofer.de |
| Acquisition of Interconnect Technology Company | Harwin has acquired KEC Limited, a UK-based design... | 13986 | Industry News | Acquisition of Interconnect Technology Company | Harwin has acquired KEC Limited, a UK-based designer and manufacturer of rugged interconnect technologies for the aerospace, defence and high-end industrial sectors. Founded in 1979, KEC manufactures EMC backshells and panel fittings that deliver long-term, reliable operation in complex, mission-critical applications. Harwin will now add the full range of KEC technologies and services to its existing portfolio of high-reliability signal, power and coax connector technologies and accessories. In addition to expanding the Harwin product range, the acquisition will make available KEC’s circular and D-type EMC backshells, glands and panel fittings and fully bespoke solutions to a wider market thanks to Harwin’s global sales, distribution and support network. | 09.09.2026 08:00:00 | Sep | news_2026-10-01_3.jpg | \images\news_2026-10-01_3.jpg | https://www.harwin.com/blog/harwin-kec-acquisition | harwin.com |
| Common Mode Chokes with higher Voltage Rating | ITG Electronics has introduced its C201371B Series... | 13992 | Product Release | Common Mode Chokes with higher Voltage Rating | ITG Electronics has introduced its C201371B Series of 300 V<sub>AC</sub> NanoCrystal common mode chokes (CMCs), providing an EMI filtering option for higher-voltage electronic systems. This expansion of ITG's 250 V<sub>AC</sub> C201371A Series, the C201371B family increases the voltage rating to 300 V<sub>AC</sub>. The upgrade helps designers address more demanding operating conditions, increase safety margins against transient surges, and support compliance with applicable safety standards, including UL/IEC 60938-2 and IEC 62368-1. The series uses nanocrystalline core material, produced by rapidly cooling molten metal to create crystals with grain sizes on the nanoscale. The material's high permeability enables designers to achieve the required inductance with fewer winding turns. In turn, the chokes can provide lower direct current resistance (DCR), helping reduce power loss and improve overall system efficiency. Compared with ferrite-based common mode chokes, the C201371B Series can save approximately 30-60 % in space and weight. This combination of smaller size, lower weight and reduced DCR makes the series well suited to power electronics designs in which thermal performance, efficiency and board space are critical considerations. Available in through-hole configurations, the C201371B Series spans inductance values from 0.4 mH to 11.0 mH, DCR values from 20.0 mΩ to 380.0 mΩ, and maximum current ratings from 4.5 to 0.9 A. The components are designed for AC/DC converters used in industrial equipment and automotive applications, as well as other commercial and consumer electronics requiring compact common-mode noise suppression. | 09.09.2026 07:30:00 | Sep | news_2026-10-01_9.png | \images\news_2026-10-01_9.png | https://www.itg-electronics.com/en/series/950 | itg-electronics.com |
| Battery Company relocates within Silicon Valley | Ensurge Micropower, a company active in solid-stat... | 13985 | Industry News | Battery Company relocates within Silicon Valley | Ensurge Micropower, a company active in solid-state lithium microbatteries, is relocating its San Jose operations. The move gives Ensurge a fully equipped, battery-focused environment, purpose-built to accelerate its proprietary lithium solid-state microbattery development and pilot-line operations, as well as a state-of-the-art space to host customers, partners, and stakeholders across med-tech, consumer electronics, IoT, and defense markets. The 32,000-square-foot facility is designed around the company's core technology development and operational needs, creating an environment for both pilot production and commercialization. Under the transition plan, Ensurge will still retain a defined process area at its current site through year-end to maintain continuous operations as equipment and workflows are transferred and qualified. | 09.09.2026 07:00:00 | Sep | news_2026-10-01_2.jpg | \images\news_2026-10-01_2.jpg | https://www.ensurge.com/en/posts/ensurge-micropower-relocates | ensurge.com |
| Electrical Safety Testers | The electrical safety testers of Kikusui’s TOS5400... | 13991 | Product Release | Electrical Safety Testers | The electrical safety testers of Kikusui’s TOS5400 Series perform two of the four fundamental safety tests: withstanding voltage and insulation resistance tests, both essential for ensuring product reliability and safety. This series complies with major international safety standards, including IEC, EN, BS, VDE, UL, CSA, GB, and JIS. In addition, to ensure stable and reliable measurements, the TOS5400 Series is equipped with a high-efficiency PWM switching amplifier, which means, that it can maintain a stable output voltage even when the AC line voltage or frequency fluctuates, enabling consistent evaluation in regions where the power supply is unstable. The discharge detection function allows the response speed (sensitivity) to be adjusted, making it possible to detect momentary discharges and high-frequency discharge components such as arc and corona discharges. The TOS5400 is also the first Kikusui withstanding voltage and insulation resistance tester featuring a touchscreen display. Its intuitive interface is claimed to simplify operation, to reduce setup time, and to support more efficient and easier test execution. It is well suited for R&D and QA testing, laboratories, production line inspections and certification bodies looking to enhance both the accuracy and efficiency of their safety evaluation processes. | 09.09.2026 06:30:00 | Sep | news_2026-10-01_8.png | \images\news_2026-10-01_8.png | https://global.kikusui.co.jp/products-index/safety-testers/ | kikusui.co.jp |
| TMR Switch Family expanded with leaded TO-92 Package Option | Littelfuse announced the TX00AT314AMA Omnipolar TM... | 13999 | Product Release | TMR Switch Family expanded with leaded TO-92 Package Option | Littelfuse announced the TX00AT314AMA Omnipolar TMR Switch Sensor, the latest addition to the TX00 TMR Switch family. The TX00AT314AMA delivers the same performance as the SOT-23-3 TX00AS314TRA in a leaded TO-92 package and with South Korea country of origin, providing design teams with a new form factor option and a diversified supply chain. The TX00AT314AMA integrates a precision TMR (Tunnel Magnetoresistance) sensing element with CMOS signal-processing circuitry - including an on-chip voltage generator, low-noise amplifier, comparator, and Schmitt trigger. Like its SOT-23-3 sibling, it features X-axis (in-plane) magnetic sensing for detection of fields parallel to the sensor surface. The device operates with a typical supply current of 1.5 μA and supports high-speed detection up to 1 kHz. Like all TX00 family members, the TX00AT314AMA features omnipolar detection with a sensitivity of about 14 Gauss, allowing it to respond to both North and South magnetic poles without polarity alignment constraints. Its operate and release thresholds, combined with built-in hysteresis are said to enable bounce-free switching even in electrically noisy environments. Typical applications are building and home automation (smart meters with tamper detection, position and limit sensing, industrial automation (proximity sensing), consumer electronics (appliances, power tools, battery-powered IoT and wearable devices as well as utilities (gas, water, and heat metering). | 08.09.2026 14:30:00 | Sep | news_2026-10-01_16.jpg | \images\news_2026-10-01_16.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-expands-omnipolar-tmr-switch-family-with-leaded-to-92-package-option | littelfuse.com |
| 600 V Super Junction MOSFETs | Alpha and Omega Semiconductor (AOS) released &alph... | 13997 | Product Release | 600 V Super Junction MOSFETs | Alpha and Omega Semiconductor (AOS) released αMOS E2™ 600 V Super Junction MOSFETs: AOGT037V60DE2 (600 V, 37 mΩ) and AOGT060V60DE2 (600 V, 60 mΩ). These devices are suited for applications including servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems. This MOSFET platform features a body-diode ruggedness with a di/dt of 1500 A/μs, in a top-side-cooled GTPAK™ package to increase thermal performance via the top-side cooling pad. As a result, system designers can enhance thermal dissipation and reclaim PCB space to maximize overall power density. | 08.09.2026 12:30:00 | Sep | news_2026-10-01_14.jpg | \images\news_2026-10-01_14.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductors-new-amos-e2-600v-super-junction-mosfets-support-optimized | aosmd.com |
| Europe’s Battery Storage Boom Accelerates | Europe’s battery storage market is entering its mo... | 13951 | Industry News | Europe’s Battery Storage Boom Accelerates | Europe’s battery storage market is entering its most transformative year yet, with annual installations forecast to rise from 32 GWh in 2025 to 57 GWh in 2026, a 78% year-on-year increase, according to EUPD Research’s latest EES Report© Europe H1 2026. The milestone signals a fundamental shift in Europe’s energy transition, as battery storage becomes critical infrastructure for renewable integration, grid flexibility and electrification across residential, commercial and utility-scale markets. Germany, Bulgaria, Italy, the United Kingdom and Spain are expected to lead Europe’s battery storage market in 2026. Bulgaria’s emergence among Europe’s leading markets demonstrates the transformative impact of EU recovery funding, highlighting growing momentum across Central and South-Eastern Europe. Growth is driven by falling battery costs, rising electricity prices, and increasing adoption of solar-plus-storage systems to maximize self-consumption and reduce energy bills. Commercial and industrial storage is gaining traction as businesses seek to reduce energy costs and optimize on-site generation, while utility-scale deployment is accelerating, supported by improving market opportunities and policy frameworks, despite persistent grid-connection and permitting challenges. The residential segment remains one of Europe’s strongest growth engines, with installations expected to increase from 11 GWh in 2025 to 15 GWh in 2026, a 36% annual increase. Germany remains the largest residential market, followed by Italy, the Netherlands, the UK and Austria. In 2025, BYD, Huawei, Sungrow and Fox ESS were the leading brands, with BYD and Huawei retaining prominent positions and together accounting for more than 30% of the total share. | 07.09.2026 09:00:00 | Sep | news_2026-09-15_4.png | \images\news_2026-09-15_4.png | https://eupd-group.com/europes-battery-storage-boom-accelerates-as-2026-installations-set-to-jump-78-yoy/ | eupd-group.com |
| Smart Power Stage Exceeds 2 A per Square Millimeter | Infineon Technologies introduces the TDA235E5 and ... | 13958 | Product Release | Smart Power Stage Exceeds 2 A per Square Millimeter | Infineon Technologies introduces the TDA235E5 and TDA235E0, a dual-phase smart power stage family designed to meet the power density requirements of next-generation AI accelerators and vertical power delivery modules. Integrating Infineon’s OptiMOS™ 6 MOSFETs and a dual-phase driver IC in a compact 6 x 6 x 0.8 mm³ package, this family delivers a power density exceeding 2 A/mm², which is claimed to set a new reference point for power stage performance in high-current AI processor applications. The two devices support up to 300 A peak current and 120 A total design current (TDC), making them well suited for next-generation AI xPU accelerators as well as conventional server CPUs in datacenter environments. Both lateral and vertical power delivery configurations are supported, providing the design flexibility required as the industry transitions toward vertical power module architectures in advanced AI processor packages. The TDA235E5 and TDA235E0 integrate into Infineon’s end-to-end AI server power delivery ecosystem, spanning the full power chain from grid interface to processor core rails. | 07.09.2026 08:30:00 | Sep | news_2026-09-15_11.jpg | \images\news_2026-09-15_11.jpg | https://www.infineon.com/technology-news/2026/inftn202609-136 | infineon.com |
| Low-Noise DC Power Supplies designed for Test Environments | Kikusui Electronics has introduced the PMX-E Serie... | 13956 | Product Release | Low-Noise DC Power Supplies designed for Test Environments | Kikusui Electronics has introduced the PMX-E Series of DC power solutions for the engineers’ daily work. Each unit is equipped with communication interfaces like LAN, USB, and RS-232C. These interfaces enable seamless connection to automated test setups, data acquisition systems, and remote-control environments. PMX-E weighs approximately 5–6 kg (depending on the model), and is optimized for benchtop use. All models feature front-facing output terminals, which simplify wiring and make connecting load harnesses faster. Depending on the model the output voltage is between 18 V and 500 V delivering between 0.1 A and 5 A. | 04.09.2026 06:30:00 | Sep | news_2026-09-15_9.png | \images\news_2026-09-15_9.png | https://global.kikusui.co.jp/w2-2/dc-power-supply-en/pmx-e/pmx-e/ | kikusui.co.jp |
| Baseplate-cooled 320 W Full-Brick AC/DC Power Supplies | XP Power introduces the ASB320 series of 320 W ful... | 13963 | Product Release | Baseplate-cooled 320 W Full-Brick AC/DC Power Supplies | XP Power introduces the ASB320 series of 320 W fully integrated, baseplate-cooled AC/DC power supplies offering single output from 12 V to 54 VDC in an encapsulated brick format. Global ITE safety approvals, Class B emissions and a low-profile rugged mechanical design make these power supplies suitable for space-constrained industrial automation, communications, test and measurement, and analytical instrumentation equipment. Featuring a built-in EMC filter, AC fuse, and bulk storage capacitor, the units reduce external components. The efficiency of up to 94 % and baseplate cooling at operating temperatures from -40 °C to +90 °C enable operation in compact sealed or fanless systems. The ASB320 offers seven single DC output voltages: 12, 15, 24, 28, 36, 48, and 54 VDC, and features a universal input range of 90 to 264 VAC. With peak power capability of up to 360 W for 5 s, the units provide headroom for transient loads without oversizing. In addition, the ±5 % output voltage trim helps engineers optimize system performance for specific load requirements. The units offer in-built over current, over voltage and over temperature protection circuitry. | 03.09.2026 13:30:00 | Sep | news_2026-09-15_16.jpg | \images\news_2026-09-15_16.jpg | https://www.xppower.com/resources/press-releases/320w-ac-dc-power-supplies-ITE%20applications | xppower.com |
| 3D-PEIM 2026 Registration Now Open | The rapid emergence of AI infrastructure is fundam... | 13953 | Event News | 3D-PEIM 2026 Registration Now Open | The rapid emergence of AI infrastructure is fundamentally reshaping power electronics, advanced packaging, and heterogeneous integration. Higher current densities, vertical power delivery architectures, thermal management, reliability, advanced materials, and AI-assisted design are becoming central challenges for next-generation computing systems. 3D-PEIM 2026 brings together researchers and industry leaders developing the technologies that will enable this transformation. Taking place November 16–19, 2026 at Arizona State University in Tempe, Arizona (USA), the symposium offers a technical program spanning the complete ecosystem of power electronics integration - from materials and manufacturing to system architecture and AI-driven design. This year’s program features a collection of plenary and keynote presentations addressing the rapidly evolving relationship between AI computing and power electronics. The presentations are complemented by invited talks on AI-enabled EDA, AI-driven power electronics co-design, advanced thermal solutions, integrated magnetics, heterogeneous packaging, and high-density voltage regulation, highlighting the multidisciplinary innovations driving future AI hardware. Beyond the Technical Sessions four expert-led tutorials on advanced packaging, sintering technologies, digital twins, and magnetic materials as well as an industry-academic panel discussion on key challenges in 3D power electronics packaging and manufacturing will complement the program. | 03.09.2026 11:00:00 | Sep | news_2026-09-15_6.jpg | \images\news_2026-09-15_6.jpg | https://www.3d-peim.org/registration/ | 3d-peim.org |
| 50 W and 100 W DC/DC Converters with 4:1 Input Range | RECOM has expanded its portfolio of isolated DC/DC... | 13964 | Product Release | 50 W and 100 W DC/DC Converters with 4:1 Input Range | RECOM has expanded its portfolio of isolated DC/DC converters with the RP50-AW and RP100-FW series. The converter families combine 4:1 input voltage ranges with robust isolation and comprehensive protection features for reliable operation in demanding environments. The RP50-AW series delivers up to 50 W output power in a compact 1×1 square inch footprint. The series supports input voltage ranges from 9-36 VDC and 18-75 VDC, offers efficiencies up to 93%, and features 2.25 kVDC isolation. In addition to single-output versions, dual-output models are also available. The operating temperature range extends from -40 °C to +105 °C, while an optional heatsink version improves thermal performance in high ambient conditions. For higher power requirements, the RP100-FW series provides up to 100 W output power with efficiencies up to 94 %. The series also supports a 4:1 input range of 9-36 VDC or 18-75 VDC. They operate in the temperature range from -40 °C to +110 °C and at altitudes up to 5000 m. Dimensions of 50.8 × 25.4 × 10.7 mm³ are achieved without heatsink, while an optional heatsink version measuring 50.8 × 26.5 × 32.2 mm³ improves thermal performance in demanding operating conditions. Both series integrate several protection functions including overvoltage, overload, overtemperature and continuous short-circuit protection, together with remote ON/OFF control supporting positive or negative logic. They both comply with current RoHS and REACH requirements. The RP50-AW and RP100-FW series are suitable for industrial control systems, test and measurement equipment, communication infrastructure and transportation-related electronics. | 02.09.2026 14:30:00 | Sep | news_2026-09-15_17.jpg | \images\news_2026-09-15_17.jpg | https://recom-power.com/en/rec-n-new-50w-and-100w-dc!sdc-converters-combine-high-power-density-with-41-ultra-wide-input-range-480.html?5 | recom-power.com |
| Collaboration on Solid-State Transformers and Sidecars for AI Power | Infineon Technologies and Skeleton Technologies, w... | 13952 | Industry News | Collaboration on Solid-State Transformers and Sidecars for AI Power | Infineon Technologies and Skeleton Technologies, which is active in high-power energy storage systems e. g. for AI data centers, have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency, resilient power solutions for data centers. Solid-state transformers (SSTs) and high-power sidecars are increasingly important building blocks for AI data center infrastructure. They enable more efficient power conversion from grid to core and higher system resilience. Accordingly, the two companies aim to advance these technologies to improve energy efficiency and system performance throughout the power delivery chain. Under the agreement, Infineon and Skeleton will jointly explore and develop advanced architectures for the entire AI data center power chain that delivers electricity from grid to core. This includes next-generation SSTs for medium-voltage AC to high-voltage DC conversion. The companies intend to combine Infineon’s high-voltage CoolSiC™ power semiconductors with Skeleton’s expertise in power conversion systems and supercapacitor technology. The companies are also collaborating on GaN-based peak-shaving systems that combine Skeleton’s supercapacitor technology with Infineon’s CoolGaN™ power semiconductors. | 02.09.2026 10:00:00 | Sep | news_2026-09-15_5.jpg | \images\news_2026-09-15_5.jpg | https://www.infineon.com/technology-news/2026/inftn202609-134 | infineon.com |
| High-Speed Optocouplers for fast and Interference-Resistant Signal Transmission | Würth Elektronik is expanding its optoelectronics ... | 13960 | Product Release | High-Speed Optocouplers for fast and Interference-Resistant Signal Transmission | Würth Elektronik is expanding its optoelectronics portfolio with the WL-OCHS high-speed optocoupler. This component is designed for high-speed digital signal transmission between galvanically isolated circuit sections. The optocoupler supports data rates from 1 MBd to 10 MBd and provides an isolation voltage of up to 5000 V<sub>RMS</sub>. Optocouplers offer galvanic isolation of high voltages and potential differences. However, the short switching times (tpHL/tpLH) of 100 ns to 1500 ns enable the high-speed optocoupler to transmit signals with significantly lower delay than conventional optocouplers. Thanks to its high CMTI (common-mode transient immunity), the optocoupler ensures reliable signal transmission even during rapid input/output voltage changes in demanding, electrically noisy environments. In addition, a copper leadframe improves resistance to corrosion and environmental influences, significantly enhancing the robustness of the new optocoupler series. The device is suitable for microcontroller, FPGA, and DSP interfaces, as well as for serial communication interfaces such as UART, SPI, and RS-232/RS-485. Typical applications therefore include measurement and control technology, industrial electronics in high-interference environments, medical devices requiring safe electrical isolation, in addition to PLC and automation systems. | 01.09.2026 10:30:00 | Sep | news_2026-09-15_13.jpg | \images\news_2026-09-15_13.jpg | https://www.we-online.com/en/news-center/press/press-releases?d=wl-ochs | we-online.com |
| Collaboration on Power Semiconductor Solutions for EVs and HEVs | Nexperia will explore a strategic collaboration on... | 13950 | Industry News | Collaboration on Power Semiconductor Solutions for EVs and HEVs | Nexperia will explore a strategic collaboration on advanced power semiconductor solutions for automotive applications with Aurobay Technologies, a division of Horse Powertrain (a joint venture between Renault Group and Geely). The collaboration aims to combine Nexperia’s expertise in GaN and SiC semiconductor technologies with Aurobay Technologies’ capabilities in powertrain system design and integration. Building on the existing collaboration, the companies aim to evaluate how closer cooperation across semiconductor development and powertrain integration can support the next generation of electrified and hybrid vehicle platforms. The companies will assess opportunities to further optimize power electronics architectures for applications including traction inverters and power generation systems. | 01.09.2026 08:00:00 | Sep | news_2026-09-15_3.png | \images\news_2026-09-15_3.png | https://www.nexperia.com/about/news-events/press-releases/nexperia-explores-collaboration-on-next-generation-power-semiconductor-solutions-for-electrified-powertrains-with-aurobay-technologies | nexperia.com |
| European Partnership with Power Electronics Distribution Company | SemiQ has announced a distribution agreement with ... | 13954 | Industry News | European Partnership with Power Electronics Distribution Company | SemiQ has announced a distribution agreement with Ibérica Semiconductores de Potencia, a Spanish-headquartered specialist in power electronics. This partnership expands SemiQ’s European reach and support for its range of high performance SiC MOSFETs and Schottky diodes. Under the deal, Ibérica will have access to SemiQ’s complete portfolio of modules, discrete and bare-die products, and will provide these with application and design support to power system developers across the entire continent. Headquartered in Madrid, Ibérica will lead the development of SemiQ’s business in Spain, while supporting customers and opportunities across Europe. | 26.08.2026 12:00:00 | Aug | news_2026-09-15_7.jpg | \images\news_2026-09-15_7.jpg | https://semiq.com/semiq-expands-european-reach-and-support-through-partnership-with-power-electronics-distribution-specialist-isp/ | semiq.com |
| Multiaxial coreless Halleffect Current Sensor for (H)Evs | Texas Instruments (TI) introduced a multiaxial cor... | 13965 | Product Release | Multiaxial coreless Halleffect Current Sensor for (H)Evs | Texas Instruments (TI) introduced a multiaxial coreless Hall-effect current sensor designed for all hybrid electric vehicle and electric vehicle (HEV/EV) traction inverter applications. The TMCS2100-Q1 sensor offers current sensing through the combination of multiaxial measurement and a proprietary algorithm, which is said to eliminate the trade-off between precision and system size in traction inverter designs. While existing coreless solutions are limited to single-axis measurements, the TMCS2100-Q1 sensor measures magnetic fields in both horizontal and vertical directions. This multiaxial measurement is 20 times more accurate than single-axis alternatives, achieving displacement error of less than 1 % at 0.4 mm movement and as low as 0.25 % at 0.1 mm. This level- of precision improves the EV powertrain torque control loop, maximizing efficiency and power delivery across varying load and thermal conditions. TI’s current sensing technology measures both axes simultaneously. Vibration during vehicle operation creates movement between the sensor and conductor, causing single-axis, differential coreless sensors to lose accuracy. The TMCS2100-Q1 sensor reduces vibration-induced error by measuring magnetic fields in both horizontal and vertical axes at once. By eliminating the magnetic core without sacrificing precision, the TMCS2100-Q1 sensor enables smaller, more power-dense traction inverter designs, helping automakers build EVs that are more efficient. | 25.08.2026 15:30:00 | Aug | news_2026-09-15_18.png | \images\news_2026-09-15_18.png | https://www.ti.com/about-ti/newsroom/news-releases/2026/ti-debuts-new-approach-to-current-sensing-for-unprecedented-accuracy-in-hev-and-ev-traction-inverter-designs.html | ti.com |
| 650 V IGBTs | ROHM has developed its 4<sup>th</sup> Generation o... | 13961 | Product Release | 650 V IGBTs | ROHM has developed its 4<sup>th</sup> Generation of 650 V IGBTs, which is well-suited for automotive electric compressors and HV heaters, as well as for inverters in industrial equipment. The automotive-grade 650 V-class products operate with V<sub>CE(sat)</sub>= 1.55 V and comply with the AEC-Q101 automotive. The devices can withstand short-circuits for 7 μs at T<sub>j</sub> = 25 °C. The lineup includes 12 products in the TO-247N package, the RGAxxTS65HR / RGAxxTS65EHR series, and 10 bare wafer products, the SG83xxWN series. ROHM is also developing 12 products in the TO-247-4L package, the RGAxxTR65HR/RGAxxTR65EHR series. Design models and materials needed for circuit design are also available for download from ROHM’s official website. | 25.08.2026 11:30:00 | Aug | news_2026-09-15_14.jpg | \images\news_2026-09-15_14.jpg | https://www.rohm.com/news-detail?news-title=2026-08-25_news_igbt&defaultGroupId=false | rohm.com |
| German Semiconductor Manufacturer acquires Indian Semiconductor Power Tech Company | Infineon Technologies has acquired C2i Semiconduct... | 13937 | Industry News | German Semiconductor Manufacturer acquires Indian Semiconductor Power Tech Company | Infineon Technologies has acquired C2i Semiconductors, a Bangalore-based technology company specializing in software-defined multiphase controllers and smart power stages for AI data center applications. C2i Semiconductors’ technology is said to complement Infineon’s portfolio of power semiconductors and power systems, enabling intelligent and scalable power delivery architectures from grid to core for AI servers and high-performance computing platforms. The transaction is expected to close in the third quarter of calendar year 2026. This acquisition aims to strengthen Infineon’s position in power solutions for AI data centers and create a center of excellence for digital power technologies in India. C2i Semiconductors brings expertise in software-defined power management and system-level power architectures. Software-defined power solutions combine advanced power semiconductors with intelligent digital control and software algorithms to optimize power conversion, regulation and system performance in real time. As increasingly powerful AI processors create highly dynamic and rapidly changing power demands, power delivery systems must respond faster and more precisely to sudden load fluctuations while maintaining efficiency and system stability. By adding intelligence to the power delivery architecture, software-defined solutions help data center operators improve efficiency, reduce power losses, and support the increasing power density requirements of next-generation AI processors. C2i Semiconductors’ technology takes a system-level approach to power delivery, spanning the path from grid to core and enabling more intelligent and adaptive power architectures for AI infrastructure. | 24.08.2026 12:00:00 | Aug | news_2026-09-01_7.png | \images\news_2026-09-01_7.png | https://www.infineon.com/press-release/2026/infpr202608-129 | infineon.com |
| 1000 V Wire-to-Board Connector for Automotive Powertrains | The high-voltage ZE150HV Series wire-to-board conn... | 13957 | Product Release | 1000 V Wire-to-Board Connector for Automotive Powertrains | The high-voltage ZE150HV Series wire-to-board connector from Hirose is now commercially available. Suitable for electric vehicle (EV) and hybrid electric vehicle (HEV) powertrains, the connector features a 4.5 mm pitch and supports 1000 V AC/DC, 10 A per pin, and operating temperatures up to 125 °C. Engineered to meet IEC 60664 standards (Pollution Degree 2, altitude 6,000 m), the ZE150HV combines reliable electrical performance with mechanical stability. Traditionally, there is a standard distance required between pins of 6.8 mm to achieve 1000 V. The ZE150HV Series features a patented design that reduces this required distance to 4.5 mm. By placing proprietary ribs between the contacts, Hirose has reduced the size of the connector to support miniaturization of powertrain and other high-voltage systems. The double-spring structure increases pressure, strengthening the contact force and stabilizing the connection under severe vibration. A housing and built-in connector position assurance (CPA) mechanism helps prevent incomplete mating. This reduces the risk of electrical arcing or exposure, especially important in high-voltage environments. | 24.08.2026 07:30:00 | Aug | news_2026-09-15_10.png | \images\news_2026-09-15_10.png | https://info.hirose.com/ze150hv | hirose.com |
| Acquisition of VPD Company | Navitas signed a definitive agreement to acquire C... | 13949 | Industry News | Acquisition of VPD Company | Navitas signed a definitive agreement to acquire Claros, a power management solutions company developing vertical power delivery (VPD) and integrated voltage regulator (IVR) technology for next-generation AI data centers, in a transaction valued at up to approximately $232.8 million. Navitas’ potential acquisition of Claros would extend the Company’s AI infrastructure portfolio from the grid all the way to the xPU by bringing VPD and IVR capabilities that can directly power the high-current, high-speed processors at the heart of AI systems. On the last step of 800 V HVDC architectures, traditional voltage regulator modules (VRMs) push power sideways across the board, and as xPUs demand thousands of amps and near-instant response times, this lateral approach hits what Navitas refers to as a "power wall". Bandwidth and compute performance are constrained by the limitations of existing power delivery systems. Through the combination of Navitas and Claros, the company expects to break through that wall from grid-to-xPU. Claros’ VPD and IVR technologies stack power conversion, drive, control, and passives into a single, compact package. By placing this solution directly beneath or inside the chip package or printed circuit board, power travels only millimeters instead of inches. The result is ultra-fast transient response, significantly lower impedance, higher efficiency at sub-volt levels, and the power density required for the next generation of AI compute. The transaction has been unanimously approved by the boards of directors of both companies and is expected to close before year-end, subject to customary closing conditions, including applicable regulatory approvals. | 24.08.2026 07:00:00 | Aug | news_2026-09-15_2.jpg | \images\news_2026-09-15_2.jpg | https://www.navitassemi.com/en/press-releases/navitas-to-acquire-claros-advancing-ai-infrastructure-with-vpd-and-ivr-technology-for-grid-to-xpu | navitassemi.com |
| Zait Akcam appointed as Managing Director of GVA | GVA Leistungselektronik has appointed Zait Akcam a... | 13931 | People | Zait Akcam appointed as Managing Director of GVA | GVA Leistungselektronik has appointed Zait Akcam as its new Managing Director. Mr. Akcam is already well known to many customers and partners through his many years as Head of Sales at the Mannheim/Germany-based company. With more than 30 years of experience in the semiconductor industry and his knowledge of international markets, he brings considerable industry and management expertise to his new role. In his new position, Akcam will drive the continued development of GVA, with a particular focus on the needs of customers and partners. One of his key priorities will be the ongoing development of the company’s product and service portfolio. The aim is to further strengthen GVA’s position as a trusted partner in power electronics and to continue providing customers with innovative solutions combined with the high level of service they have come to expect. | 22.08.2026 06:00:00 | Aug | news_2026-09-01_1.jpg | \images\news_2026-09-01_1.jpg | https://www.gva-power.de/en/ | gva-power.de |
| 650 W Thick Film Power Resistors | The power capabilities and compact package of thes... | 13947 | Product Release | 650 W Thick Film Power Resistors | The power capabilities and compact package of these devices by Vishay allow designers to reduce the number of parallel resistors required. Their performance is supported by a "cold system" baseplate design that enables efficient heat transfer to an external heatsink, maintaining stable operation over a wide temperature range from -55 °C to +155 °C. RPWA 650 series devices integrate a power resistor and optional embedded NTC temperature sensor in a single housing. Customizable cabling and an easy-mount design with self-calibrating pressure eliminate the need for board-level soldering, reduce wiring and assembly complexity, and enable faster plug and play integration in power modules and assemblies. Available in a range of resistance values from 6.2 Ω to 1 MΩ, with tolerances down to ± 5 %, the RPWA 650 series supports a variety of circuit functions, including precharge, discharge, active discharge, power conversion, and snubber operations. The devices are suited for automotive, energy, industrial, medical, and avionics systems used in harsh environments. Their maximum operating voltage is specified up to 6000 V<sub>DC</sub> with a dielectric strength to 7000 V<sub>RMS</sub>, and typical self-inductance of ≤ 40 nH. For high voltage and fast-switching circuits, this combination enables accurate energy dissipation and minimizes transient overshoot. The devices also offer a pulse energy capability, supporting repetitive operation up to 3.5 J per pulse for 50 μs pulses. The RoHS-compliant resistors are pending AEC-Q200 qualification. | 20.08.2026 15:30:00 | Aug | news_2026-09-01_17.jpg | \images\news_2026-09-01_17.jpg | https://www.vishay.com/en/company/press/releases/2026/RPWA-650/ | vishay.com |
| Collaboration on Battery Management Systems and Integrated PowerBox Solutions | Schaeffler and CATL have signed a memorandum of un... | 13936 | Industry News | Collaboration on Battery Management Systems and Integrated PowerBox Solutions | Schaeffler and CATL have signed a memorandum of understanding (MoU) in the field of e-mobility for the joint development of Battery Management Systems (BMS) and "X-in-1" Integrated PowerBox (IPB) solutions. The collaboration builds on an already secured customer project and addresses the growing demand for electrification solutions in the European market. Both companies are pursuing a long-term partnership. | 20.08.2026 11:00:00 | Aug | news_2026-09-01_6.jpg | \images\news_2026-09-01_6.jpg | https://www.schaeffler.com/en/media/press-releases/press-releases-detail.jsp?id=88211712 | schaeffler.com |
| 18 V GaN FET e.g. for Next-Generation AI Power Architectures | Efficient Power Conversion (EPC) announced the mas... | 13939 | Product Release | 18 V GaN FET e.g. for Next-Generation AI Power Architectures | Efficient Power Conversion (EPC) announced the mass production of the EPC2370, an ultra-low on-resistance 18 V eGaN® FET engineered to enhance the efficiency and power density of next-generation AI server power supplies. The EPC2370 has a 22 V transient voltage rating that allows it to replace MOSFETs with ratings up to 25 V. AI power architectures are transitioning to 800 V DC power distribution, adopting 6 V high-density, multi-kilowatt intermediate bus converters operating at 1 MHz. Developed on EPC’s seventh-generation GaN platform, the EPC2370 delivers a benchmark 101 A continuous current rating, 0.28 mΩ typical R<sub>DS(on)</sub>, 26 nC gate charge in a 3.3 mm × 3.3 mm thermally enhanced, dual-side-cooled PQFN package. The EPC2370 is optimized for center-tapped synchronous rectification in 48 V-to-6 V and 800 V-to-6 V power converters. Its 18 V continuous and 22 V transient ratings provide voltage margin for reliable operation while enabling peak efficiencies of 98 % and full-load efficiencies of 97 % in high-density power modules. Beyond AI servers, the EPC2370 is also suited for high-current DC/DC converters used in high-performance computing, telecommunications infrastructure, and advanced industrial power systems. To accelerate evaluation and product development, EPC also offers the EPC90168 evaluation board. Measuring 2" × 2", the EPC90168 features two EPC2370 GaN FETs configured as a half bridge. The board includes all critical components and an optimized layout to maximize switching performance. It also provides multiple probe points for convenient waveform measurements and efficiency evaluation. | 20.08.2026 07:30:00 | Aug | news_2026-09-01_9.jpg | \images\news_2026-09-01_9.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3353/epc-announces-mass-production-of-epc2370-18-v-gan-fet-for-next-generation-ai-power-architectures | epc-co.com |
| 1 W Isolated DC/DC Converters for Medical and ITE Applications | Bel Fuse launched its PTM1-S Series, a family of 1... | 13946 | Product Release | 1 W Isolated DC/DC Converters for Medical and ITE Applications | Bel Fuse launched its PTM1-S Series, a family of 1 W isolated DC/DC converters engineered to meet the growing demand for medically certified, high-isolation power in compact form factors. Housed in an encapsulated SIP-7 package, the series is built for medical instrumentation, harsh-environment equipment, and industrial control systems that require both dual medical and ITE safety certification in a single part. The PTM1-S Series offers 6000 V<sub>DC</sub> isolation and reinforced insulation rated for 300 V<sub>AC</sub>, protecting against surges and cross-circuit faults in applications where isolation integrity is critical. The series is dual certified to UL/IEC 62368 for information technology equipment and EN 60601 and 2xMOOP for medical use, giving engineers the flexibility to qualify a single part number across both medical and industrial designations rather than stocking separate solutions for each. The converters are rated for continuous operation across an extended -40 °C to +100 °C temperature range, making them well suited to harsh outdoor and industrial environments as well as controlled clinical settings. With a 1:1 input-to-output voltage ratio, the initial lineup spans 5, 12, 15, and 24 V<sub>DC</sub> input options with 5 and 12 V<sub>DC</sub> single outputs, covering the input rails most common in medical and industrial control platforms. | 19.08.2026 14:30:00 | Aug | news_2026-09-01_16.jpg | \images\news_2026-09-01_16.jpg | https://www.belfuse.com/resources/news/bel-launches-ptm1-s-series-1w-isolated-dc-dc-converters-for-medical-and-ite-applications | belfuse.com |
| Palm-sized Split Core Current Sensors with Accuracy up to 0.01 % | Yokogawa Test & Measurement released its second-ge... | 13943 | Product Release | Palm-sized Split Core Current Sensors with Accuracy up to 0.01 % | Yokogawa Test & Measurement released its second-generation of AC/DC split core current sensors, the CT500SA and CT200SA. Designed specifically for space-constrained environments, such as in-vehicle xEV testing, they offer accurate current measurements for the 200 A and 500 A ranges. The sensors are compatible with both power analyzers and waveform measurement instruments. The main sensor unit of both devices measures 110 mm width × 62 mm height × 25 mm depth. Each features a single unlock-and-open button for one-handed clamp-on installation, while the body includes both an M4 screw hole and a cable tie slot to secure the sensor in place. The CT500SA and CT200SA guarantee accuracy of ±0.1 % from -40 °C to 85 °C. Within 23±5 °C range this improves further still, achieving a peak accuracy of ±0.09 % of reading +0.01 % of full scale. Both models guarantee accuracy “one order of magnitude higher than that of conventional current sensors”, equivalent to through-hole types but with the convenience of clamp-on installation. Available frequency bandwidths differ between the two models. The CT500SA delivers a bandwidth of 500 kHz (−3 dB), while the CT200SA extends to 1 MHz (−3 dB). The CT200SA and CT500SA can also measure switching frequencies, used for motor inverter validation and requiring wideband measurement. Both models hold a phase accuracy of ±0.1° (0.1 Hz ≤ f ≤ 1 kHz). Major Target Markets are EV/xEV, Automotive, Renewable energy: Photovoltaic (PV) / solar and HVAC. | 19.08.2026 11:30:00 | Aug | news_2026-09-01_13.jpg | \images\news_2026-09-01_13.jpg | https://tmi.yokogawa.com/news/press-releases/2026/yokogawa-test-measurement-to-release-ct500sa-and-ct200sa-acdc-split-core-current-sensors/ | tmi.yokogawa.com |
| Radiation-Hard Power GaN FETs for Space Computing | EPC Space announced three eGaN® power transis... | 13959 | Product Release | Radiation-Hard Power GaN FETs for Space Computing | EPC Space announced three eGaN® power transistors in plastic surface-mount packages, designed to deliver high-performance power conversion for next-generation space computing systems. The EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine ultra-low on-resistance, high current capability and fast switching performance in compact PQFN packages with backside thermal pads. All three offer exceptional radiation immunity: TID > 1 Mrad, SEE LET(Si) 85 MeV cm²/mg, and neutron > 4E15 n/cm². The EPC7050PCSH is a 15 V device with 101 A continuous current capability and typical R<sub>DS(on)</sub> of 0.28 mΩ. The EPC7066PCSH is rated at 25 V and 101 A, with typical R<sub>DS(on)</sub> of 0.37 mΩ, while the EPC7065PCSH provides a 40 V rating, 101 A continuous current capability and typical R<sub>DS(on)</sub> of 0.5 mΩ. All three products are designed for synchronous rectifier applications on the secondary side of intermediate bus converters with output in the range of 5 V – 12 V, delivering an R<sub>DS(on)</sub> × Q<sub>G</sub> figure of merit to enable higher-frequency and higher-efficiency operation. The devices also target point-of-load buck converters/IVRs supplying 0.8 V core voltage for the processor. | 18.08.2026 09:30:00 | Aug | news_2026-09-15_12.jpg | \images\news_2026-09-15_12.jpg | https://epc.space/2026/08/epc-space-introduces-radiation-hard-egan-fets-for-next-generation-space-computing/ | epc.space |
| Pressureless Ag Semi-Sintering TIM suited for 3D Power Modules | Sumitomo Bakelite has developed a high-power-densi... | 13940 | Product Release | Pressureless Ag Semi-Sintering TIM suited for 3D Power Modules | Sumitomo Bakelite has developed a high-power-density 3D SiC-MOSFET power module with a resin-insulated dual-layer structure through joint research with Tohoku University. By optimizing the thermal expansion characteristics and elastic modulus of the resin insulated substrate and epoxy molding compound, Sumitomo Bakelite significantly reduced module warpage. In addition, the adoption of an Ag semi-sintering bonding material improved bonding reliability with the heat sink. By replacing conventional ceramic insulated substrates with resin-insulated substrates, the mismatch in the coefficients of thermal expansion between the substrate and copper is significantly reduced, suppressing power module warpage to 20 μm or less. The use of resin-insulated substrates suppresses module warpage caused by differences in thermal expansion between substrate materials. This enables a thinner Thermal Interface Material (TIM) layer between the module and the heat sink, significantly reducing thermal resistance while ensuring highly reliable bonding to the heat sink and significantly improving mountability. Ag semi-sintering TIM enables low-temperature, pressureless bonding, unlike conventional soldering and sintered-silver bonding processes that require high temperatures and high pressure, thereby reducing the thermal stress applied to the module. In addition, its high adhesion and low elastic modulus enable a bond-line thickness of less than 100 μm while significantly improving the reliability and durability of the bonding layer between the module and the heat sink. Compared with industry-standard solutions, this technology is said to make it possible to reduce the volume of power units by approximately 50 %. | 18.08.2026 08:30:00 | Aug | news_2026-09-01_10.png | \images\news_2026-09-01_10.png | https://www.sumibe.co.jp/english/topics/2026/it-materials/0804_01/index.html | sumibe.co.jp |
| 2027 IEEE Electronic Components and Technology Conference: Call for Papers | The 2027 IEEE Electronic Components and Technology... | 13955 | Event News | 2027 IEEE Electronic Components and Technology Conference: Call for Papers | The 2027 IEEE Electronic Components and Technology Conference (ECTC), the technical conference and product exhibition for the world’s semiconductor packaging industry, has announced a Call for Papers. ECTC 2027 will take place June 1-4, 2027 at the Gaylord Rockies Resort & Convention Center in Denver, CO/USA. More than 2,500 scientists, engineers and businesspeople from around the world are expected to attend. The deadline for abstract submissions is October 5, 2026. The ECTC 2027 technical program will address the latest developments, trends and applications in a range of advanced packaging topics, including components, materials, assembly, reliability, modeling, interconnect design and technology, device and system packaging, heterogeneous integration, chiplet architectures, hybrid bonding, wafer-level packaging (WLP) and panel-level packaging (PLP), fan-out and fan-in packaging, flip-chip technologies, integrated photonics and optoelectronics, LEDs, 5G, quantum computing and systems, and other emerging technologies in electronics packaging. Previously unpublished, non-commercial paper abstracts are requested in areas like Applied Reliability, Assembly and Manufacturing Technology, Electrical Design and Analysis, Emerging Technologies, Interconnections, RF, High-Speed Components & Systems, Materials & Processing, Packaging Technologies, Photonics and Thermal/Mechanical Simulation & Characterization. | 17.08.2026 13:00:00 | Aug | news_2026-09-15_8.jpg | \images\news_2026-09-15_8.jpg | https://ectc.net/ | ectc.net |
| Metallized Polypropylene Film Capacitors for Industrial and Automotive Applications | Panasonic Industry Europe released the ECWFJ serie... | 13944 | Product Release | Metallized Polypropylene Film Capacitors for Industrial and Automotive Applications | Panasonic Industry Europe released the ECWFJ series of metallized polypropylene film capacitors. The series is aimed at engineers working across industrial and automotive power electronics (it is qualified to AEC-Q200 standards) who require dependable performance under demanding environmental conditions. The ECWFJ series demonstrates resistance to moisture, maintaining stable operation under conditions of 40 °C and 95 % relative humidity for up to 1.000 hours. Typical application areas include electric mobility systems such as DC/DC converters, on-board chargers and e-compressors, along with solar inverters and EV charging infrastructure. The series is also designed for use in industrial power supplies, LED lighting, smart meters and embedded power systems, where consistent electrical performance and durability are essential. Technically, the ECWFJ series covers DC voltage ratings from 600 V up to 1.100 V. Capacitance values range from 1 μF up to 12 μF. The capacitors operate across a temperature range from -40 °C up to +110 °C, with the 1.000 V variant rated up to 105 °C. The devices are engineered to withstand thermal shock from -55 °C up to 85 °C over 1.000 cycles and can tolerate maximum ambient temperatures of up to 125 °C for limited durations. Panasonic’s proprietary patterned metallization with an integrated fuse mechanism helps ensure stable capacitance over the lifetime of the component and enhances overall system reliability. The design is complemented by a flame-retardant plastic enclosure and non-conductive resin, supporting compliance with UL and other regulatory standards. In addition, the capacitors are fully compliant with RoHS requirements. | 17.08.2026 12:30:00 | Aug | news_2026-09-01_14.jpg | \images\news_2026-09-01_14.jpg | https://industry.panasonic.eu/company/newsroom/film-capacitor-cost-effective-ECWJF | industry.panasonic.eu |
| Acquisition of High-Voltage Product Line | Dean Technology (DTI) and HVP High Voltage Product... | 13934 | Industry News | Acquisition of High-Voltage Product Line | Dean Technology (DTI) and HVP High Voltage Products of Munich, Germany, have announced an addition to their catalog of products. DTI and HVP have jointly acquired the high voltage measurement and driver businesses of North Star High Voltage (NSHV), a manufacturer of high voltage probes. NSHV has developed and defined high voltage measurement for the last 24 years. Their high voltage probes are designed to provide high accuracy while providing wide bandwidth capability, rugged packaging, and overall convenience. Two main types of probes are available – the PVM series designed for portability, and the VD series optimized for long life and accuracy. Both types of probes can be used with 1 MΩ input oscilloscopes standard, or with meters of various input impedances. | 17.08.2026 09:00:00 | Aug | news_2026-09-01_4.png | \images\news_2026-09-01_4.png | https://www.deantechnology.com/dti-hvp-acquires-new-high-voltage-product-line/ | deantechnology.com |
| Digital Isolators in Quad-Channel Configuration | Toshiba Electronics Europe has expanded its DCL34x... | 13942 | Product Release | Digital Isolators in Quad-Channel Configuration | Toshiba Electronics Europe has expanded its DCL34xx0B series of standard digital isolators with four quad-channel devices for industrial automation equipment. These devices achieve a typical current consumption of 0.2 mA per channel while supporting data rates of up to 25 Mbit/s. Applications include programmable logic controllers (PLCs), I/O interfaces, sensors, actuators, motor drives, inverters and switching power supplies. The DCL34xx0B series operates from supply voltages of 2.25 V to 5.5 V and provides a minimum isolation voltage of 3000 V<sub>rms</sub>. Housed in a SSOP16 package, the devices support operation across a temperature range of -40 °C to +125 °C. Using Toshiba’s magnetic-coupling isolation technology, these devices provide isolated signal transmission with a common-mode transient immunity (CMTI) of 30 kV/μs (min). The additions comprise the DCL340L0B and DCL340H0B with four forward channels and zero reverse channels (4:0), and the DCL342L0B and DCL342H0B with two forward channels and two reverse channels (2:2). | 13.08.2026 10:30:00 | Aug | news_2026-09-01_12.jpg | \images\news_2026-09-01_12.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/08/isolators-solid-state-relays-20260813-1.html | toshiba.semicon-storage.com |
| Single and Three Phase Common Mode HEMP Power Line Filters | The EMC solutions provider EMIS offers a range of ... | 13962 | Product Release | Single and Three Phase Common Mode HEMP Power Line Filters | The EMC solutions provider EMIS offers a range of EMI powerline filters designed to protect sensitive electrical and electronic equipment against High-Altitude Electromagnetic Pulse (HEMP) and conducted Electromagnetic Interference (EMI/RFI) resulting from high-energy electromagnetic events, including nuclear-induced electromagnetic disturbances and lightning-related transients. EMIS SMF913 and TMF913HEMP EMI Power Line Filters provide single phase and three phase configurations, and suitable for AC and DC facility power applications. With current ratings from 6 to 3000 A, they are able to support applications ranging from control panels and communication equipment to high-current facility power distribution systems. The EMIS HEMP filter design features Integrated 80 kA peak surge-current protection (8/20 μs) which provides protection against lightning-induced surges and power switching transients. Standard Performance models provide 100 dB insertion loss from 30 MHz to 18 GHz, followed by 90 dB attenuation up to 40 GHz. Extended-performance models provide 100 dB attenuation from 14 kHz to 40 GHz, offering enhanced protection against both low-frequency conducted interference and high-frequency electromagnetic disturbances. Built-in discharge resistors safely dissipate energy stored in internal capacitors after power is switched off, improving operator safety and reducing maintenance hazards. The EMIS HEMP filters are designed in accordance with the requirements of MIL-STD-188-125-1/2 and MIL-PRF-15733J, supporting HEMP-hardened facility and high-performance EMI/RFI protection applications and tested in accordance with MIL-STD-188-125-1/2 to withstand specified E1 Short Pulse and E2 Intermediate Pulse current injection levels under common-mode and line-to-ground conditions, with E1 residual current limited to ≤10 A and no damage to the filter during E2 testing. | 12.08.2026 12:30:00 | Aug | news_2026-09-15_15.jpg | \images\news_2026-09-15_15.jpg | https://emisglobal.com/product-category/military-grade-filters/ | emisglobal.com |
| Silicone-free Thermal Conductive Paste | To compensate for even the smallest air pockets be... | 13945 | Product Release | Silicone-free Thermal Conductive Paste | To compensate for even the smallest air pockets between the contact pairs, Fischer Elektronik is expanding its product range of thermal interface materials to include a high-performance, silicone- and solvent-free thermal conductive paste. This thermal paste, with the product code WLPF 36 035, has a thermal conductivity of 3.6 W/m•K and is CRM-free; it is therefore not subject to any additional training requirements. The paste contains no metallic fillers, is electrically insulating and is claimed to offer high long-term stability with good creep properties. The WLPF 36 035 thermal grease can be used within a temperature range of -60 °C to +100 °C and is supplied in a 35 g tin. Other types and sizes of packaging can be produced to customer specifications on request. | 11.08.2026 13:30:00 | Aug | news_2026-09-01_15.jpg | \images\news_2026-09-01_15.jpg | https://www.fischerelektronik.de/en/latest-news/news/2026-fischer-pressemitteilungen/new-silicone-freehigh-performance-thermal-conductive-paste/ | fischerelektronik.de |
| Manufacturing Facility in Guadalajara, Mexico, opened | Indium Corporation has opened a manufacturing faci... | 13935 | Industry News | Manufacturing Facility in Guadalajara, Mexico, opened | Indium Corporation has opened a manufacturing facility in Guadalajara, Mexico. This 1,230-square-meter facility will manufacture solder paste, cored wire, and wave flux products to support customers throughout the Americas and global markets. Production will initially focus on Indium Corporation’s best-selling paste series Indium8.9HF and Indium10.8HF. This marks the first phase of the company’s long-term manufacturing investment in Mexico, with more capabilities planned as the facility grows to meet customer demand. At full capacity, the Guadalajara facility is expected to produce approximately 18–20 metric tons of solder paste per month. In addition to manufacturing and operational roles, the site will house customer service and technical support teams. | 11.08.2026 10:00:00 | Aug | news_2026-09-01_5.jpg | \images\news_2026-09-01_5.jpg | https://www.indium.com/press-releases/indium-corporation-opens-new-manufacturing-facility-in-guadalajara-mexico-expanding-global-production-network/ | indium.com |
| TVS Diodes for simplified ISO 7637 Load-Dump Protection | Littelfuse announced the TPSMD-FL Series FlatSuppr... | 13941 | Product Release | TVS Diodes for simplified ISO 7637 Load-Dump Protection | Littelfuse announced the TPSMD-FL Series FlatSuppressX™ TVS Diodes, a family of automotive-grade transient voltage suppression devices designed to simplify ISO 7637-2 Pulse 5b load-dump protection for 12 V vehicle electronics. Unlike conventional TVS diodes that can allow transient voltages to rise to levels requiring additional protection circuitry, the TPSMD-FL Series leverages proprietary FlatSuppressX™ technology to maintain a low, flat, and stable clamping voltage profile during high-energy transient events. This enables designers to meet demanding automotive load-dump requirements with lower clamping fewer external components, reducing design complexity and PCB space requirements. Rated for 3000 W peak pulse power dissipation and housed in a compact surface-mount DO-214AB package, the TPSMD-FL Series is optimized to protect sensitive automotive electronics from high-energy surges. The devices are AEC-Q101 qualified and designed specifically for applications requiring compliance with ISO 7637-2 Pulse 5b load-dump standards. They provide IEC 61000-4-2 ESD protection up to 30 kV air and contact discharge. The TPSMD-FL Series is suited for automotive applications operating on 12 V power rails. | 11.08.2026 09:30:00 | Aug | news_2026-09-01_11.jpg | \images\news_2026-09-01_11.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-launches-tpsmd-fl-tvs-diodes-for-simplified-iso-7637-load-dump-protection | littelfuse.com |
| Quad-Channel Digital Isolators for High-Temperature Applications | Toshiba Electronics Europe has expanded its standa... | 13927 | Product Release | Quad-Channel Digital Isolators for High-Temperature Applications | Toshiba Electronics Europe has expanded its standard digital isolator line-up with the DCL54xx01A series, comprising ten quad-channel devices that support data rates of up to 150 Mbps and operate at temperatures up to 125 °C. Target industrial automation applications include programmable logic controllers (PLCs), I/O interfaces, motor control, inverters and switching power supplies. The DCL54xx01A series operates from 2.25 V to 5.5 V and provides an isolation voltage of 5000 V<sub>rms</sub> for one minute. Typical propagation delay is 10.9 ns, while typical pulse-width distortion is 0.8 ns. The devices are housed in an SOIC16-W package and operate from -40 °C to +125 °C, making them suitable for industrial systems in high-temperature environments. The series is available in 4:0, 3:1 and 2:2 forward/reverse channel-direction configurations. Devices are also available with different default output states and enable-control options. | 06.08.2026 12:30:00 | Aug | news_2026-08-15_12.jpg | \images\news_2026-08-15_12.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/08/isolators-solid-state-relays-20260806-1.html | toshiba.semicon-storage.com |
| Power Operational Amplifier Family | Apex Microtechnology released three precision powe... | 13923 | Product Release | Power Operational Amplifier Family | Apex Microtechnology released three precision power operational amplifiers - the PA167, PA168, and PA169 - delivering up to 20 % higher thermal performance than previous generations. The PA167 is a high-voltage MOSFET operational amplifier featuring a monolithic amplifier core designed for applications requiring high output voltage or output current density. Operating up to 205 V, the device delivers 1 A of continuous output current in the standard version and 2 A in the A-grade version, with up to 6 A peak current and 33 W of internal power dissipation. The PA168 operates up to 200 V with 8 A of continuous output current, 12 A peak current, and 52 W of internal power dissipation. Separate power supplies for the amplifier core and output stage allow designers to optimize voltage swing and overall system efficiency. The PA169 integrates two independent high-voltage amplifier channels into a 52-pin QFP package, delivering dual 200 V, 2 A continuous (6 A peak) amplifier channels with up to 52 W of internal power dissipation for applications requiring multiple high-performance amplifier channels in a single package. All three devices utilize Apex’s monolithic MOS technology and incorporate integrated protection features including temperature-compensated current limiting with over-current flag indication and amplifier disable functionality. Housed in a 20 mm × 20 mm PQ package, the devices are targeted towards applications like high-density voltage and current sources, electrostatic transducers, beam and mirror deflection systems, deformable mirror focusing, piezoelectric positioning, and other precision motion control applications. | 06.08.2026 08:30:00 | Aug | news_2026-08-15_8.jpg | \images\news_2026-08-15_8.jpg | https://www.apexanalog.com/press/product-news-pq-expansion.html | apexanalog.com |
| 2200 V GaN Technology | Power Integrations announced that PowiGaN™ g... | 13922 | Product Release | 2200 V GaN Technology | Power Integrations announced that PowiGaN™ gallium-nitride (GaN) technology is now rated at up to 2200 V, which is according to the company "far exceeding the voltage capabilities of all other commercially available GaN technologies". This positions PowiGaN well for high-voltage data centers, EVs, renewable energy and HVDC infrastructure as they leverage higher-voltage bus architectures in search of greater power density. GaN power switches are steadily supplanting silicon transistors in a wide range of power conversion applications thanks to their higher efficiency and switching frequencies. However, GaN technology must keep pace with data center, EV, renewables and HVDC infrastructure roadmaps calling for higher voltages and greater power density. Alternatives include lower-frequency silicon carbide or arrays of stacked, lower-voltage GaN devices. PowiGaN ICs rated at 1700 V are already being designed into single-stage data center auxiliary power applications, while 1250 V PowiGaN offers a simpler alternative to stacked solutions in the main power path in 800 V<sub>DC</sub> data centers. In addition to data centers other possible applications are e.g. EVs, photovoltaic inverters and battery-energy storage systems. | 05.08.2026 07:30:00 | Aug | news_2026-08-15_7.jpg | \images\news_2026-08-15_7.jpg | https://investors.power.com/news/news-details/2026/Power-Integrations-Demonstrates-Worlds-First-2200-V-GaN-Technology-for-Next-Era-High-Voltage-Power-Systems/default.aspx | power.com |
| Custom Magnetics Research and Development Center opened in Northern Germany | Bourns has opened a research, development, and des... | 13932 | Industry News | Custom Magnetics Research and Development Center opened in Northern Germany | Bourns has opened a research, development, and design center for its custom magnetics operations in Rosdorf near Göttingen/Germany. The facility brings together the full 44-person engineering, prototyping, and design team - the same group that has been developing custom magnetic components at this site since Bourns acquired Kaschke Components in 2021 - in a renovated 3,000-square-meter building. Production of inductive components continues at Bourns’ manufacturing sites in Tunisia. The move comes after Bourns wound down ferrite production at the team’s previous location, leaving it in a building that was too large for an engineering and design operation. Rather than adapt the old space, Bourns chose to start fresh. The center includes a prototype workshop with separate areas for measurement technology and qualification equipment - tools the engineering team needs to move from concept to tested design without leaving the building. After renovation there are now 17 offices where each engineer has a permanent desk, a soundproof booth for uninterrupted work, two meeting rooms, and a work café - all designed with the home office as the benchmark to beat. Heating and cooling come from a geothermal system feeding two heat pumps. Rainwater drains into a surrounding basin and two on-site ponds rather than the municipal system. Bourns also added electric vehicle charging stations for employees. All renovation work - interior fit-out, electrical, painting, fire safety - was handled by local companies based in the German federal state of Lower Saxony. | 05.08.2026 07:00:00 | Aug | news_2026-09-01_2.jpg | \images\news_2026-09-01_2.jpg | https://www.bourns.com/news/press-releases/pr/2026/08/05/bourns-opens-custom-magnetics-research-and-development-center-in-goettingen--germany | bourns.com |
| Silicon Photovoltaics Make Power Generation in Space More Cost-Effective | Source Energy and the Fraunhofer Institute for Sol... | 13933 | Industry News | Silicon Photovoltaics Make Power Generation in Space More Cost-Effective | Source Energy and the Fraunhofer Institute for Solar Energy Systems ISE have jointly developed a product line for space satellites based on silicon solar cells. The solar arrays use a special interconnection technology. Combined with inexpensive silicon solar cells, this enables modules at much lower costs compared to standard III-V technology currently dominating the space sector. The high cost and limited availability of solar cells based on III-V materials are major constraints for commercial missions, particularly Low Earth Orbit (LEO) satellites. The resulting solar modules are compact and lightweight: 64 g and 629 cm², (321 mm by 209 mm). The average power output of the prototypes was 15.6 W – with modules achieving 16.1 W – and an average active area efficiency of 18.8 % (AM0 at 25 °C). At 252 W/kg, the module’s specific power is competitive with other silicon modules in its class. The silicon solar cells are interconnected using shingle-matrix technology, where individual solar cells are cut into strips and arranged with certain overlap and spacing relative to one another, like brickwork. An electrically conductive adhesive bonds the solar cells together. The machine manufacturer M10 Solar Equipment GmbH has developed an industrial stringer for shingle-matrix technology. If the solar panel is damaged – for example, by a small meteorite or space debris – the matrix arrangement of the solar cells allows the current to simply flow around the damaged area. Rows and columns of solar cells in the layout can be flexibly adjusted depending on the satellite’s voltage and current requirements. | 04.08.2026 08:00:00 | Aug | news_2026-09-01_3.jpg | \images\news_2026-09-01_3.jpg | https://www.ise.fraunhofer.de/en/press-media/press-releases/2026/silicon-photovoltaics-make-power-generation-in-space-more-cost-effective.html | ise.fraunhofer.de |
| Wide-Terminal Metal Foil Current Sense Resistors | Bourns announced the CFG-A Series Wide-Terminal Me... | 13926 | Product Release | Wide-Terminal Metal Foil Current Sense Resistors | Bourns announced the CFG-A Series Wide-Terminal Metal Foil Current Sense Resistors, available in 0508 and 0612 footprints. Rated up to 2 W (0612 footprint rated at 2 W at 70 °C; 0508 rated up to 1.5 W), and covering a resistance range of 1–30 mΩ, the CFG-A Series is AEC-Q200-compliant and designed for automotive power electronics, motor drives, and other high-reliability applications where accurate, thermally stable current measurement is required. Automotive electrification, spanning 12 V to 48 V mild-hybrid architectures and beyond, is raising current sensing accuracy requirements while simultaneously compressing available board space. This metal foil element in the CFG-A Series delivers a TCR down to ±50 ppm/°C for values ≥5 mΩ (model-dependent), maintaining measurement accuracy across the -55 °C to +155 °C operating range and better stability under sustained load. The wide-terminal geometry lowers thermal resistance from the resistive element to the PCB, reducing localized heating and improving long-term drift performance. Its value range spans from 1–10 mΩ (CFG0508A) and 1–30 mΩ (CFG0612A) with ±1% and ±5% tolerances. | 03.08.2026 11:30:00 | Aug | news_2026-08-15_11.jpg | \images\news_2026-08-15_11.jpg | https://www.bourns.com/news/press-releases/pr/2026/08/03/bourns-introduces-cfg-a-series-wide-terminal-metal-foil-current-sense-resistors-for-automotive-and-high-reliability-applications | bourns.com |
| President of Danfoss Power Electronics appointed | Danfoss Power has appointed Kern Jain as President... | 13918 | People | President of Danfoss Power Electronics appointed | Danfoss Power has appointed Kern Jain as President of Danfoss Power Electronics. He most recently served as Segment CFO of Danfoss Power Electronics and Drives and brings more than 20 years of experience in global technology and pharmaceutical companies. Mr. Jain has started in his new role as President of Danfoss Power Electronics on 1 August 2026. He succeeds Dominic Dorfner, who has left the company at his own request. Over the past months, the two worked closely together to ensure a smooth handover, allowing Jain to meet customers and colleagues ahead of his official start. The Danfoss business unit develops and markets power electronics products and solutions under the established Semikron Danfoss brand. The leadership transition coincides with the renaming of the business unit from Semikron Danfoss to Danfoss Power Electronics, reflecting being part of the Danfoss Group’s core electrification business. The established Semikron Danfoss brand will be retained for products and solutions. Within the Danfoss Group, the Power Electronics and Drives segment operates two distinct businesses: Danfoss Drives and Danfoss Power Electronics. | 01.08.2026 07:00:00 | Aug | news_2026-08-15_3.jpg | \images\news_2026-08-15_3.jpg | https://www.semikron-danfoss.com/about-semikron-danfoss/news-events/news/kern-jain-appointed-president-of-danfoss-power-electronics | semikron-danfoss.com |
| High-Voltage Power Supply for High-Precision Applications | DBK David + Baader has expanded its portfolio with... | 13938 | Product Release | High-Voltage Power Supply for High-Precision Applications | DBK David + Baader has expanded its portfolio with Vantys, a high-voltage power supply designed for high-precision measurement, analytical, and testing systems. Vantys targets applications where even the smallest deviations in output voltage can directly affect measurement accuracy, process stability, and system availability. The power supply features a fast and stable regulation, enabling rapid adaptation to changing operating conditions. At the same time, it offers integration flexibility through analog and digital interfaces as well as SCPI-compatible control. This simplifies integration into existing systems and reduces engineering effort. Typical applications include medical technology systems such as X-ray and CT equipment, as well as analytical and scientific applications including mass spectrometry and electron microscopy. The power supply is also suitable for security and inspection systems, such as X-ray screening equipment, and industrial processes utilizing ionization technology. In addition to precision and regulation performance, long-term system availability was a key development focus. With a design lifetime of at least 50,000 hours, a wear-free solid-state architecture, and integrated self-diagnostics and safe-state functions, Vantys helps reduce maintenance requirements and unplanned downtime. The system is based on a scalable architecture and can be configured for different voltage ranges. Development is carried out using automotive-grade components. | 01.08.2026 06:30:00 | Aug | news_2026-09-01_8.jpg | \images\news_2026-09-01_8.jpg | https://www.industrial-eu.dbk-group.com/all-products/high-voltage-power-supply-vantys | industrial-eu.dbk-group.com |
| "Engineer Social Hub": Engineers supporting Engineers | ROHM launched the English-language version of Engi... | 13920 | Industry News | "Engineer Social Hub": Engineers supporting Engineers | ROHM launched the English-language version of Engineer Social Hub, an online platform designed to make the company’s technical information, know-how, and support more accessible to engineers. Engineer Social Hub brings together ROHM’s technical content related to semiconductor products and solutions in one place. Through product-specific FAQs and discussions, as well as a chatbot, users can search for solutions to technical questions and obtain direct support from ROHM engineers. Previously, when users encountered technical challenges, they often needed to contact ROHM individually or make inquiries through distributors. Via the Engineer Social Hub, users can now access ROHM’s technical information and know-how online – anytime and from anywhere. FAQs and discussions on the site can be read and searched without logging in. If users are unable to find the information they need, they can register as members and post questions in discussions, enabling them to explore solutions in greater depth. The site also provides documents and videos explaining how to use Engineer Social Hub. Going forward, ROHM will continue to evolve Engineer Social Hub into a community in which not only ROHM and users, but also users themselves, can communicate with one another to generate new ideas and solutions. Through this initiative, ROHM aims to contribute to solving engineers’ technical challenges by creating a site where engineers connect, create, and collaborate. | 30.07.2026 08:00:00 | Jul | news_2026-08-15_5.png | \images\news_2026-08-15_5.png | https://www.rohm.com/news-detail?news-title=2026-07-30_news&defaultGroupId=false | rohm.com |
| Harnessing Leakage Inductance | Würth Elektronik is expanding its WE-MCRI product ... | 13928 | Product Release | Harnessing Leakage Inductance | Würth Elektronik is expanding its WE-MCRI product series with the 1090HL variant (HL = High Leakage), a coupled inductor specifically designed to improve the performance of SEPIC, ZETA and Ćuk converters. This double choke takes an unconventional approach by deliberately harnessing leakage inductance, which is normally treated as a parasitic element in conventional designs. The coupled inductor enables more effective filtering for improved EMC performance with a far more compact design. By using the molded double choke, which measures 11 × 10 × 9 mm³, ripple current reduction can be achieved with a lower inductance value. Cost and space are reduced compared with using two separate inductors. This special component also requires a smaller AC coupling capacitor, without sacrificing efficiency while enabling a more compact design. As a molded coupled inductor, this component delivers temperature-stable and soft saturation performance. | 29.07.2026 13:30:00 | Jul | news_2026-08-15_13.jpg | \images\news_2026-08-15_13.jpg | https://www.we-online.com/en/news-center/press/press-releases?d=we-mcri-high-leakage | we-online.com |
| 12 V Automotive eFuse supports Software-defined Vehicles | Infineon Technologies has expanded its automotive ... | 13925 | Product Release | 12 V Automotive eFuse supports Software-defined Vehicles | Infineon Technologies has expanded its automotive power distribution portfolio with the SPOC™ Wire Guard BTS80009 SWPx 1ES, a 12 V automotive eFuse with SPI interface. As the first member of a smart power switch family, it combines a protected high-side switch with integrated I²t wire protection, software configurability, and advanced diagnosis. It is designed for new E/E architectures that support SDV concepts with over-the-air updates. The SPOC Wire Guard BTS80009 SWPx 1ES automotive eFuse provides failure isolation within µs as well as current sensing, avoiding overdimensioning of the wire diameter compared with traditional melting fusesFor permanently powered loads, the product features a dedicated idle mode with a power consumption of a few μA while maintaining full protection. Its 24-bit SPI interface is daisy-chain-capable. Supporting platform reuse across vehicle variants, the configuration and protection parameters can be adjusted in software for each variant. In addition, SPOC Wire Guard devices provide real-time status, pre-warning indicators, and other diagnostics. SPOC Wire Guard also addresses growing needs for features supporting ADAS and enables fail-operational capabilities for L2++ to L5. It is offered as a Safety Element out of Context (SEooC) for use in systems up to ASIL-D in accordance with ISO 26262, with an integrated non-volatile memory (NVM) to configure an application-specific safe state. It can autonomously react to supply-voltage drops caused by load faults to protect the supply and is available in four variants with a scalable feature set (A, I, P, and F) supporting currents up to 34.5 A. | 29.07.2026 10:30:00 | Jul | news_2026-08-15_10.jpg | \images\news_2026-08-15_10.jpg | https://www.infineon.com/technology-news/2026/inftn202607-124 | infineon.com |
| Current Transducer with PPM-Class Precision | Danisense announced a high-precision DP12IP curren... | 13921 | Product Release | Current Transducer with PPM-Class Precision | Danisense announced a high-precision DP12IP current transducer designed for isolated DC and AC current measurement in demanding PCB-mounted power electronics applications. Based on the company’s closed-loop compensated fluxgate technology, the DP12IP series combines ppm-class accuracy with a maximum linearity error of 10 ppm and high long-term stability in a PCB-mount package featuring a form factor of 32 mm and weighing 250 g. This allows for integration into 1U power supplies and other space-constrained equipment. The transducer supports current measurement up to 18 A and accommodates measurement resistors up to 100 Ω at full scale. It uses fixed excitation frequency and second harmonic zero-flux detection for current measurement. Typical applications include magnet power supplies for particle accelerators, stable precision power supplies, precision servo drives for motion control, battery test benches, battery emulators, and power measurement and power analysis systems. | 28.07.2026 06:30:00 | Jul | news_2026-08-15_6.jpg | \images\news_2026-08-15_6.jpg | https://danisense.com/products/dp12ip/ | danisense.com |
| Software for Three-Phase Power Analysis on MXO Series Oscilloscopes | Rohde & Schwarz has introduced the R&S MXO-K333 so... | 13915 | Product Release | Software for Three-Phase Power Analysis on MXO Series Oscilloscopes | Rohde & Schwarz has introduced the R&S MXO-K333 software option for three-phase power analysis on its MXO series oscilloscopes. The software adds in-depth measurement and analysis functions for testing and debugging three phase power systems, drives and inverters. Available for all four and eight channel models of the MXO 3, MXO 4, MXO 5 and 5C oscilloscopes, it supports the analysis of voltage and current signals in three-phase AC systems. This test solution keeps the captured waveforms visible during measurement, allowing engineers to review power values and check transient behavior in the same instrument. Other oscilloscope functions such as math, spectrum analysis, measurement tracking and zone trigger remain available for further analysis. A guided setup wizard assigns the oscilloscope channels to the voltage and current probes used for the three-phase analysis. It verifies the wiring and supports common two-wire, three-wire and four-wire configurations (2V2A, 3V3A and 3VN3A). After setup, the software provides cycle-by-cycle calculations for RMS values, power factor, active power, reactive power and total power. By defining the input and output configuration, users can also calculate the system’s three-phase efficiency. Additional analysis views include phasor display, harmonic analysis and THD measurements in line with IEC 61000-3-2 and MIL-STD-1399. As an oscilloscope-based solution, the R&S MXO-K333 enables engineers to correlate three-phase power results directly with the underlying voltage and current waveforms in real time. This is especially valuable during R&D and debugging, when power behavior often must be analyzed alongside switching events, transients, control signals and communication activity. | 23.07.2026 15:30:00 | Jul | news_2026-08-01_15.jpg | \images\news_2026-08-01_15.jpg | https://www.rohde-schwarz.com/uk/about-us/news-press/all-news/rohde-schwarz-presents-new-software-for-three-phase-power-analysis-on-mxo-series-oscilloscopes_229356-1642048.html?change_c=GB | rohde-schwarz.com |
| Strategic Partnership to Accelerate HV and UHV Silicon Carbide Adoption | Navitas Semiconductor and Magnachip Semiconductor,... | 13919 | Industry News | Strategic Partnership to Accelerate HV and UHV Silicon Carbide Adoption | Navitas Semiconductor and Magnachip Semiconductor, a designer and manufacturer of analog and mixed-signal power semiconductor platform solutions, announced a strategic partnership to accelerate adoption of SiC technologies in high-voltage (HV) and ultra-high-voltage (UHV) power markets. Under the terms of the agreement, Magnachip will license Navitas’ GeneSiC™ Trench-Assisted Planar™ (TAP) technology to enter the HV and UHV SiC markets. The license covers 1200 V, 2300 V, 3300 V and higher voltage GeneSiC technologies, enabling Magnachip to build on Navitas’ SiC device platforms for next-generation power conversion applications. Magnachip will also gain access to Navitas’ SiC supply chain and materials ecosystem, supporting faster market entry. At the same time, the technology is planned to be ported, qualified, and internalized at Magnachip’s fab in South Korea. The companies expect this approach to help accelerate Magnachip’s entry into SiC while maintaining continuity with Navitas’ established technology and materials base. The licensed technologies are expected to support next-generation applications including energy and grid infrastructure, energy storage, industrial electrification, automotive and other high-power systems. The companies also stated that the agreement encompasses broader engagement beyond SiC. Additional areas of partnership are expected to be detailed and announced later. | 23.07.2026 07:30:00 | Jul | news_2026-08-15_4.jpg | \images\news_2026-08-15_4.jpg | https://www.navitassemi.com/en/press-releases/navitas-and-magnachip-announce-strategic-partnership-to-accelerate-high-voltage-and-ultra-high-voltage-silicon-carbide-adoption | navitassemi.com |
| High-Precision Power Analyzer | Yokogawa introduced the WT1500 power analyzer for ... | 13924 | Product Release | High-Precision Power Analyzer | Yokogawa introduced the WT1500 power analyzer for high-voltage, multi-functional measurement within the renewable energy and xEV markets as well as for semiconductor and battery applications. Operating with an input voltage of 2000 V<sub>DC</sub>, its four measurement channels fit within a 2U (approx. 88 mm), 19-inch chassis, making it suitable for the rack-mount and PC controlled test environments. Resolver signal input support enables engineers to conduct motor evaluation tests without needing additional equipment, while multi-unit synchronization capabilities will later allow up to 5 units to connect, for a maximum of 20 power channels. The WT1500 achieves a total power accuracy of ±0.038 % (DC, 50/60 Hz) and low-power-factor accuracy of ±0.07 % of S at 50/60 Hz and supports two types of input elements, High Voltage (HV) and Wide Bandwidth (WB). The HV element supports direct measurement up to 2000 V<sub>DC</sub> and 300 kHz, well-suited for high-voltage PCS and ESS applications. The WB element supports up to 1000 V with a 2 MHz bandwidth, crucial for measuring the complex, high-frequency waveforms generated in today’s xEV motors. Both inputs share a common sensor input and can be mixed in a single unit. The instrument supports four power measurements and four motor evaluations, including both encoder and resolver signal inputs, IEEE 1588 time synchronization, and data output to CAN/CAN-FD buses and low-latency data transmission via UDP communication. Featuring several interfaces for remote control via PC, external monitor or tablet up to five WT1500 units can be synchronized, enabling 20-channel power measurement. | 22.07.2026 09:30:00 | Jul | news_2026-08-15_9.jpg | \images\news_2026-08-15_9.jpg | https://tmi.yokogawa.com/news/press-releases/2026/yokogawa-test-measurement-releases-wt1500-precision-power-analyzer/ | tmi.yokogawa.com |
| AEC-Q101 compliant 40 V N-channel MOSFETs | Toshiba Electronics Europe has launched the XPJ1R5... | 13907 | Product Release | AEC-Q101 compliant 40 V N-channel MOSFETs | Toshiba Electronics Europe has launched the XPJ1R504PB, an automotive-compliant 40 V, 120 A N-channel power MOSFET housed in the S-TOGL™ package, expanding its lineup for 12 V systems. Target applications include inverters, semiconductor relays, load switches, and motor drives. By adding this 40 V MOSFET to its existing lineup in the S-TOGL package, which includes the XPJR6604PB and XPJ1R004PB, Toshiba has expanded its product options to meet a range of applications and performance requirements. The S-TOGL package employs gull wing leads that help relieve mounting stress, thereby improving the mechanical reliability of the soldered connections. In addition, the package features a post less structure that integrates the chip’s source-electrode connection and outer leads, thereby reducing parasitic resistance and achieving an on resistance (R<sub>DS(ON)</sub>) of 1.54 mΩ (max.) at a gate-source voltage (V<sub>GS</sub>) of 10 V. The use of a thick copper frame in the S-TOGL package lowers the transient thermal impedance between the channel and the case (Z<sub>th(ch-c)</sub>) to 0.76 K/W, reducing conduction loss and suppressing heat generation, thereby improving overall system efficiency. Furthermore, a multi-pin structure for the source leads enhances current distribution, enabling high current capability. | 21.07.2026 07:30:00 | Jul | news_2026-08-01_7.jpg | \images\news_2026-08-01_7.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/07/automotive-20260721-1.html | toshiba.semicon-storage.com |
| Strategic Acquisition increases Medium Voltage Expertise | Tamura Corporation has entered into a share transf... | 13917 | Industry News | Strategic Acquisition increases Medium Voltage Expertise | Tamura Corporation has entered into a share transfer agreement, through its subsidiary Tamura-Europe Limited, to acquire EMG Power Electric S.r.l. This strategic acquisition marks another important step in Tamura’s "One TAMURA for Next 100" Medium-Term Management Plan, strengthening the Group’s capabilities in medium-voltage power technologies and supporting growth in key markets including renewable energy, industrial electrification, AI-driven data centers and critical power infrastructure. Following the completion of the transaction, EMG will serve as the Tamura Group’s Global Center of Excellence for medium-voltage dry-type transformer technologies, supporting engineering development, manufacturing excellence and technology transfer across the Group’s worldwide operations. By combining EMG’s expertise with Tamura’s global engineering and manufacturing network across Japan, Europe, the United States, Mexico, China and Malaysia, the Group aims to strengthen its ability to deliver advanced power conversion solutions to customers worldwide. | 21.07.2026 06:50:00 | Jul | news_2026-08-15_2.png | \images\news_2026-08-15_2.png | https://www.tamuracorp.com/global/ | tamuracorp.com |
| Family of 1200-2300 V SiC Power Modules | WeEn Semiconductors has launched a family of AC/DC... | 13908 | Product Release | Family of 1200-2300 V SiC Power Modules | WeEn Semiconductors has launched a family of AC/DC and DC/DC SiC power modules to target the growing range of solid-state transformer (SST) applications, as well as EV super chargers and smart-grid/renewable applications. The semiconductors are available in an array of packages and with voltages ranging from 1200 to 2300 V, R<sub>DS(on)</sub> values as low as 1.5 mΩ and customer-specific configurations can also be created. Module configurations have been created to cater for a huge array of SST applications, including grid PFC for the latest generation of AI racks, enabling conversion from 35 kV<sub>AC</sub> to 800 V<sub>DC</sub> in a single stage. This includes 3-level topology modules for enhanced EMI performance (e.g. WMSC5R0N17B3T), and 2-level devices, for easier control and smaller footprints (e.g. WMSC5R0F23B3T). Similarly, half bridge modules for LLC/DAB primary and secondary applications have also been announced with packaging options that include B2, B3 and 62 mm screw mount housing. | 20.07.2026 08:30:00 | Jul | news_2026-08-01_8.jpg | \images\news_2026-08-01_8.jpg | https://www.ween-semi.com/about/news/technical-article/61 | ween-semi.com |
| 35 W to 350 W AC/DC Power Supplies | XP Power announces the LBA series of low-profile e... | 13929 | Product Release | 35 W to 350 W AC/DC Power Supplies | XP Power announces the LBA series of low-profile enclosed, chassis-mount, single-output AC/DC power supplies, covering power levels from 35 W to 350 W within the operating temperature range of -30 °C to +70 °C. Designed for cost-sensitive industrial technology applications, the series provides a platform for engineers developing industrial automation, security and surveillance systems, lighting control, smart home and building control equipment. The LBA series offers regulated single output voltages from 5 V to 48 V<sub>DC</sub> (model dependent) with output adjustment capability to compensate for system tolerances or voltage drops. This output voltage trim allows engineers to ensure accurate voltage delivery at the point of load and improve overall system performance and reliability. A universal 90 to 264 V<sub>AC</sub> input range and active PFC are standard in this series, which provides an efficiency of up to 90%. In lower power ratings, the LBA series offers a footprint of 99 mm × 82 mm × 30 mm (35 W and 50 W models) and 99 × 97 × 30 mm³ (75 W). Models up to 200 W feature convection-cooled, fanless operation, designed for noise-sensitive environments. The 350 W variant incorporates fan cooling. A wide ensures reliable performance in harsh environments. | 16.07.2026 14:30:00 | Jul | news_2026-08-15_14.jpg | \images\news_2026-08-15_14.jpg | https://www.xppower.com/resources/press-releases/35-350w-ac-dc-power-supplies-industrial%20applications | xppower.com |
| Shielded Power Inductors for High-Current, Automotive and DC/DC Designs | Bourns introduced the SRP2010PA, SRP2510PA, and SR... | 13913 | Product Release | Shielded Power Inductors for High-Current, Automotive and DC/DC Designs | Bourns introduced the SRP2010PA, SRP2510PA, and SRP2512PA Series of shielded power inductors designed to support high current operation in space-constrained electronic designs. This series combines a metal-alloy powder core with shielded construction to reduce magnetic field radiation while maintaining a low-profile package. The devices are AEC-Q200 compliant and suitable for automotive-grade applications. Typical applications are automotive systems, DC/DC converters and miniature electronic devices. | 16.07.2026 13:30:00 | Jul | news_2026-08-01_13.jpg | \images\news_2026-08-01_13.jpg | https://www.bourns.com/news/press-releases/pr/2026/07/16/bourns-releases-new-shielded-power-inductors-for-high-current--low-profile-automotive-and-dc-dc-designs | bourns.com |
| Joining the Current/OS Partner Network to Advance the Future of Direct Current Microgrids | Power Innovations International (Pii) has joined t... | 13903 | Industry News | Joining the Current/OS Partner Network to Advance the Future of Direct Current Microgrids | Power Innovations International (Pii) has joined the Current/OS Foundation to advance the adoption of Direct Current microgrids and support industry efforts to establish standards for the next generation of energy systems. As electrification accelerates across transportation, data centers, industrial facilities, airports, and distributed energy applications, direct current (DC) is becoming an increasingly important foundation for modern power systems. Current/OS is committed to addressing the challenge of defining and implementing standards for designing, deploying, and operating DC systems at scale by bringing together technology leaders dedicated to creating the frameworks and best practices needed to accelerate DC adoption. Pii provides power electronics ranging from individual converter modules to complete DC power systems, including its Tower of Power (ToP) platform. The Pii Tower of Power enables organizations to build DC-coupled microgrids that integrate energy storage, renewable generation, EV charging, and critical loads while reducing unnecessary power conversion stages. Through this partnership, Pii and Current/OS will work alongside other industry participants to advance the adoption of DC technologies, improve interoperability between systems, and accelerate the development of energy infrastructure and standards that can better support these electrification demands. | 16.07.2026 08:00:00 | Jul | news_2026-08-01_3.png | \images\news_2026-08-01_3.png | https://powerinnovations.com/power-innovations-international-joins-current-os-partner-network-to-advance-the-future-of-direct-current-microgrids/ | powerinnovations.com |
| Radiation-Hardened GaN HEMT Driver for Satellite and High-Rel Space Applications | Infineon Technologies introduces the RIC70115, a r... | 13909 | Product Release | Radiation-Hardened GaN HEMT Driver for Satellite and High-Rel Space Applications | Infineon Technologies introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements. The RIC70115 supports both silicon (Si) and GaN MOSFET designs in low-side and high-side configurations. The RIC70115 integrates an independent Miller Clamp function that prevents parasitic-induced turn-on while maintaining the desired switching speed, reducing switching losses and improving overall efficiency. A Truly Differential Input (TDI) logic stage delivers high noise immunity by rejecting common-mode noise and mitigating the effects of electromagnetic interference and radio frequency interference, both particularly relevant in the electrically demanding environment of a satellite power bus. An integrated low dropout regulator (LDO) generates a tightly regulated 4.8 V drive voltage from a 5 V or 12 V source, reducing the need for external regulation components and supporting a power input range of 4.75 V to 15 V. The RIC70115 meets the requirements of MIL-PRF-38535 across an extended operating temperature range of -55 °C to +125 °C. It is radiation hardened to a Total Ionizing Dose (TID) rating of up to 100 krad (Si) and has been characterized for Single Event Effects (SEE) up to a Linear Energy Transfer (LET) of 81.9 MeV·cm²/mg, providing the radiation performance margins required for low-earth orbit and beyond. | 15.07.2026 09:30:00 | Jul | news_2026-08-01_9.jpg | \images\news_2026-08-01_9.jpg | https://www.infineon.com/technology-news/2026/inftn202607-122 | infineon.com |
| Berlin Startup Secures €2M for Gallium Oxide Epitaxy | NextGO Epi, a Berlin/Germany-based deep tech start... | 13901 | Industry News | Berlin Startup Secures €2M for Gallium Oxide Epitaxy | NextGO Epi, a Berlin/Germany-based deep tech startup and spin-off of the Leibniz Institute for Crystal Growth (IKZ), has closed a pre-seed funding round totaling 2 million euros. This was also enabled by the European Commission’s Chips Act 2.0. The company produces gallium oxide epitaxial wafers for next-generation power electronics. Its process creates a semiconductor material that aims to cut the manufacturing costs of power semiconductors by up to 75 percent. NextGO Epi claims to be Europe’s only company producing industrial-grade gallium oxide epitaxial wafers with diameters of up to 4 inches. The material forms the electrically active layer of the next generation of power semiconductors: gallium oxide-based components can withstand higher voltages and operate more efficiently than the silicon carbide or gallium nitride commonly used today. The fresh capital will be used to accelerate product development, expand the team, and strengthen the company’s commercial presence in Europe and on global markets. The founding team brings together more than ten years of experience in gallium oxide research and epitaxy, backed by two international patents and over 30 scientific publications. Gallium oxide is ten times more energy-efficient, can handle up to six times higher voltage density, and can be manufactured at up to 75 percent lower cost than GaN or SiC. | 15.07.2026 06:00:00 | Jul | news_2026-08-01_1.jpg | \images\news_2026-08-01_1.jpg | https://www.nextgoepi.com/news/nextgo-epi-received-a-%E2%82%AC2m-pre-seed-round | nextgoepi.com |
| Expanding the Direct Current Portfolio | ABB is acquiring Advantics, a specialist provider ... | 13948 | Industry News | Expanding the Direct Current Portfolio | ABB is acquiring Advantics, a specialist provider of Silicon Carbide-based power conversion solutions based in France. The acquisition expands ABB’s Direct Current (DC) portfolio and positions the company to serve accelerating demand for efficient DC solutions across data centers, industrial microgrids, power generation and EV infrastructure. Financial terms were not disclosed. The transaction is expected to close by Q4 2026. The IEA expects electricity’s share of final energy consumption to rise from 20 percent today to around 36 percent by 2035. By using advanced semiconductor technology to control more of this electrical power, ABB’s DC solutions aim to minimize repeated AC/DC conversion and to maximize efficiency. The acquisition of Advantics adds a Silicon Carbide power conversion technology to ABB’s broader DC portfolio, strengthening the building blocks needed to design, protect, convert, distribute and manage power in electrical architectures with higher power density, resilience and efficiency. Based in Saint-Genis-Pouilly, in eastern France, Advantics integrates hardware, firmware and software to optimize power conversion performance across applications including data centers, industrial microgrids, power generation and EV infrastructure. The company’s power converter modules deliver up to 99 % efficiency. | 15.07.2026 06:00:00 | Jul | news_2026-09-15_1.png | \images\news_2026-09-15_1.png | https://www.abb.com/global/en/news/137427/abb-to-acquire-advantics-expanding-direct-current-portfolio | abb.com |
| Acquisition for expanding Analog and Mixed-Signal Portfolio | Diodes Incorporated (Diodes) has entered into a d... | 13916 | Industry News | Acquisition for expanding Analog and Mixed-Signal Portfolio | Diodes Incorporated (Diodes) has entered into a definitive agreement to acquire ElevATE Semiconductor, Inc. (ElevATE) in an all-cash transaction for $250 million. ElevATE is a fabless semiconductor company based in San Diego, California that specializes in the development of integrated circuits for the Automated Test Equipment (ATE) industry. Diodes anticipates to add approximately $50 million of revenue in the first twelve months post-close, with revenue expected to grow at a CAGR of greater than 20% over the next four years with gross margin significantly higher than Diodes’ corporate average. The Boards of both companies and the stockholders of ElevATE have approved the transaction, which is still subject to customary closing conditions, including regulatory approvals. The transaction is expected to close during the second half of 2026. | 14.07.2026 06:00:00 | Jul | news_2026-08-15_1.png | \images\news_2026-08-15_1.png | https://www.diodes.com/about/news/press-releases/diodes-incorporated-to-acquire-elevate-semiconductor | diodes.com |
| Current Probe for Measurements up to 1000 A | Teledyne LeCroy expands its portfolio of current m... | 13930 | Product Release | Current Probe for Measurements up to 1000 A | Teledyne LeCroy expands its portfolio of current measurement solutions with the CP1000 AC/DC current probe, which has been specifically designed for precise measurement of high currents in applications such as traction inverters, motor drives, fast charging stations, energy storage systems, and industrial power electronics. With measurement capability up to 1000 A<sub>rms</sub> and 1400 A peak current, the CP1000 combines 1000 A continuous current capability with 1.5 MHz bandwidth. This capability is particularly important for SiC- and GaN-based power circuits as well as for efficiency and power-loss measurements. It fills the gap between traditional high-current transformers and high-bandwidth laboratory current probes. The probe features a 33 mm core opening in combination with a 6-meter cable, enabling measurements on large conductors and busbars without interrupting the circuit. Through Teledyne LeCroy’s ProBus® interface the probe is automatically recognized and scaled. Functions such as Auto-Zero and Degauss can be controlled directly from the oscilloscope. | 13.07.2026 15:30:00 | Jul | news_2026-08-15_15.jpg | \images\news_2026-08-15_15.jpg | https://www.teledynelecroy.com/probes/current-probes/cp1000 | teledynelecroy.com |
| Collaboration on DC Power Solutions for AI Data Centers | Infineon Technologies and LS ELECTRIC have signed ... | 13902 | Industry News | Collaboration on DC Power Solutions for AI Data Centers | Infineon Technologies and LS ELECTRIC have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency direct current (DC) power infrastructure solutions for AI data centers and next-generation power grids. The collaboration will focus on key DC infrastructure areas, including power conversion systems for energy storage systems, solid-state transformers (SSTs) and solid-state circuit breakers (SSCBs). SSTs are advanced, semiconductor-based power conversion devices that can be up to 30 percent smaller and lighter while offering higher efficiency compared to conventional copper and iron-based transformers. SSCBs use semiconductors and smart algorithms to protect electrical circuits from damage caused by short circuits or overloads. They interrupt the flow of current and operate on the microsecond scale to improve system stability and protection. These semiconductor-based solutions are becoming increasingly important in high-density power environments such as AI data centers. The collaboration aims to improve power and voltage conversion efficiency while enhancing the stability and reliability of next-generation DC power systems. Under the provisions of the MoU, Infineon will support the development of high-efficiency, high-performance DC power infrastructure systems with its semiconductor portfolio that includes power semiconductors, microcontrollers and power control solutions. LS ELECTRIC will leverage its expertise in power systems and industrial automation to drive system-level integration and implementation. Together, the two companies will align technology roadmaps and advance co-development efforts to capture growth opportunities in the next-generation energy infrastructure market. | 13.07.2026 07:00:00 | Jul | news_2026-08-01_2.jpg | \images\news_2026-08-01_2.jpg | https://www.infineon.com/press-release/2026/infpr202607-121 | infineon.com |
| Intelligent Fuse Technology for Battery Systems | The STTP 9550 from Schurter combines overcurrent p... | 13912 | Product Release | Intelligent Fuse Technology for Battery Systems | The STTP 9550 from Schurter combines overcurrent protection with active overcharge protection in a compact 3-terminal fuse. Using its integrated trigger function, the charge and discharge paths can be disconnected even if the protection IC or FET fails. This makes the STTP 9550 suitable for lithium-ion batteries used in energy storage, industrial and mobility applications. These three-terminal fuses STTP 9550 combine conventional overcurrent protection with an actively triggered overcharge protection function, providing an additional layer of safety for lithium-ion battery systems. In addition to current-dependent interruption, the integrated trigger terminal enables controlled activation in critical operating conditions. This allows reliable disconnection of charge and discharge paths even in the event of protection IC or FET failure. Gold-plated terminals ensure low and stable contact resistance, high signal integrity and corrosion resistance. The package supports high-power-density battery pack designs ranging from 1 to 24 cells. Typical applications include energy storage systems, power tools, UPS equipment, e-bikes, e-scooters, and automated guided vehicles (AGVs). Supported by UL approvals and designed for redundant protection architectures required by the battery safety standards, three-terminal fuses provide a robust and intelligent protection solution for advanced energy systems. | 11.07.2026 12:30:00 | Jul | news_2026-08-01_12.jpg | \images\news_2026-08-01_12.jpg | https://www.schurter.com/en/news/sttp-intelligent-fuse-solutions-for-battery-systems | schurter.com |
| TVS Diodes for 48 V Automotive Systems | Littlefuse announced the TP5.0SMD-FL (5 kW) and TP... | 13911 | Product Release | TVS Diodes for 48 V Automotive Systems | Littlefuse announced the TP5.0SMD-FL (5 kW) and TP1KSMB-FL (1 kW) Series FlatSuppressX™ TVS Diodes, designed to protect 48 V automotive electronics from transient overvoltage events while delivering low and stable clamping performance. Engineered for next-generation 48 V systems in compliance with ISO 21780, the TVS diodes address a critical challenge in automotive design: protecting increasingly sensitive ICs - such as DC/DC converters and gate drivers - without exceeding their absolute maximum ratings. Using Littelfuse’s proprietary FlatSuppressX technology, the devices maintain a near-constant, low clamping voltage during fast transients and high-energy surge events. The TP5.0SMD-FL Series provides up to 5000 W peak pulse power capability in a DO-214AB (SMC) package. At the same time, the TP1KSMB-FL Series delivers 1000 W in a DO-214AA (SMB) package. Both series are AEC-Q101 qualified. | 09.07.2026 11:30:00 | Jul | news_2026-08-01_11.jpg | \images\news_2026-08-01_11.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-launches-flatsuppressx-tp5-0smd-fl-and-tp1ksmb-fl-tvs-diodes-for-48-v-automotive-systems | littelfuse.com |
| PCIM Visitors enable Charity Donation | Vincotech raised € 12,500 for Plan International G... | 13905 | Industry News | PCIM Visitors enable Charity Donation | Vincotech raised € 12,500 for Plan International Germany’s climate resilience project in Zambia through an interactive charity activity at this year’s PCIM Europe trade fair. Every visitor, who took part in a reaction game, contributed to the donation. Vincotech has made community fundraising a tradition at PCIM Europe, using interactive attractions to engage visitors while supporting charitable causes. Over the years, attractions including wall climbing, Sudoku challenges, virtual reality experiences, and, most recently, a fast-paced reaction game have delighted attendees. This year’s crowd favorite drew around 500 participants, all playing for a good cause. This year’s charity initiative will benefit a Plan International Germany’s project in Zambia that supports communities in responding to the effects of climate change. The project focuses on practical measures such as sustainable agriculture, green business development, hydroponics, and environmental protection. It also helps young people and farming families improve food security, gain new skills and create more stable sources of income. | 09.07.2026 10:00:00 | Jul | news_2026-08-01_5.jpg | \images\news_2026-08-01_5.jpg | https://www.vincotech.com/company/news-events/vincotech-raises-euro12-500-at-pcim-europe-for-plan-international-germany/ | vincotech.com |
| 600 V Super Junction MOSFETs in SMD Package | ROHM has developed a lineup of 600 V Super Junctio... | 13906 | Product Release | 600 V Super Junction MOSFETs in SMD Package | ROHM has developed a lineup of 600 V Super Junction MOSFETs, the R60xxXNx and R60xxWNx series. The products – R60xxXNx series and PrestoMOS™ R60xxWNx series – add surface-mount DFN8080-5L (8.0 × 8.0 × 0.85 mm³) and TOLL (11.68 × 9.9 × 2.3 mm³) packages to the existing package lineup. These packages are suited for applications that require space savings and higher power density, including power supplies for AI servers and industrial equipment. In terms of characteristics, the gate threshold voltage (V<sub>GS(th)</sub>) required to turn on the MOSFET is set to a 3 V to 5 V range widely used in standard products. In addition, improved admittance characteristics deliver greater versatility and lower loss, compared with conventional R60xxYNx series and PrestoMOS R60xxVNx series. Surface-mount packages having market common footprint ensure excellent versatility while making it easier to consider replacement in existing power supply circuits and select second sources. The lineup consists of 21 models in the high-speed switching R60xxXNx series and 11 models in the PrestoMOS R60xxWNx series. Typical application examples are power supplies for AI servers, data centers and industrial and consumer equipment (LLC, PFC, Flyback, etc.) as well as motors and inverters for fans, AC servos, and other applications. | 09.07.2026 06:30:00 | Jul | news_2026-08-01_6.jpg | \images\news_2026-08-01_6.jpg | https://www.rohm.com/news-detail?news-title=2026-07-09_news_super-junction-mosfet&defaultGroupId=false | rohm.com |
| Vertically Stacked Packaging Technology in a Half-Bridge Configuration | Alpha and Omega Semiconductor introduced its AOPL6... | 13900 | Product Release | Vertically Stacked Packaging Technology in a Half-Bridge Configuration | Alpha and Omega Semiconductor introduced its AOPL66801 80V MOSFET in a half-bridge configuration available in a state-of-the-art DFN6x5 AmpStack™ MOSFET package. This breakthrough packaging technology enables high-density designs for various power conversion applications, ranging from next-gen Megawatt AI factories to everyday power tools. Designed to support high power-density requirements, AOS’ packaging uses vertically stacked die technology with two MOSFETs connected as a high-side and low-side MOSFET, forming a half-bridge. This configuration effectively increases power density and maximizes available PCB space compared to a two DFN5x6 discrete MOSFET solution. The AOPL66801 also features an optimized clip design for the switch node connecting the two MOSFETs, which minimizes parasitic inductance between the high-side and low-side MOSFETs. Compared to a standard discrete solution, the AOPL66801 minimizes parasitic inductance on the PCB, reducing phase-node voltage ringing and decreasing stress on the MOSFET. The PCB layout can affect gate-driving performance and degrade switching performance due to parasitic inductance. The AOPL66801 has a Kelvin sense pin that maintains gate-voltage stability during large di/dt switching and provides a more effective drive path for the high side, reducing losses. In addition, AOPL66801 has a maximum junction temperature of 175 °C, providing increased capability. These factors provide significant system-level improvements that support higher power density and increased operational efficiencies. | 07.07.2026 12:30:00 | Jul | news_2026-07-15_17.jpg | \images\news_2026-07-15_17.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-ampstack-packaging-leap-forward-mosfet-power-density | aosmd.com |
| Standard-Level 40 V MOSFETs for Motor Control Circuits | Vishay introduced four V TrenchFET® Gen IV sta... | 13897 | Product Release | Standard-Level 40 V MOSFETs for Motor Control Circuits | Vishay introduced four V TrenchFET® Gen IV standard-level n-channel power MOSFETs in the 6.15 mm by 5.15 mm PowerPAK® SO-8 single package. Optimized for the noisy environments of motor control circuits, the Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP combine a high minimum gate-source threshold voltage of greater than 2.5 V with Q<sub<gd</sub> / Q<sub<gs</sub> ratios of less than 1. The high minimum gate-source threshold voltage of the devices released today prevents false MOSFET triggering induced by the gate in motor control circuits, while their optimized Q<sub>gd</sub> / Q<sub>gs</sub> ratios reduce gate-induced voltage fluctuations and the impact of gate noise. Both characteristics make the devices ideal for providing synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems. The meet the requirements of specific applications, the SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP are available with a range of typical on-resistance values from 0.9 mW to 2.5 mW at 10 V, and gate charge values from 32.6 nC to 82 nC. The MOSFETs are 100 % R<sub>G</sub>- and UIS-tested, RoHS-compliant, and halogen-free. | 07.07.2026 09:30:00 | Jul | news_2026-07-15_14.jpg | \images\news_2026-07-15_14.jpg | https://www.vishay.com/en/company/press/releases/2026/SiR5404DP-et-al/ | vishay.com |
| Hjalti Pall Thorvardarson Appointed Chief Operating Officer | Danisense has appointed Hjalti Pall Thorvardarson ... | 13892 | People | Hjalti Pall Thorvardarson Appointed Chief Operating Officer | Danisense has appointed Hjalti Pall Thorvardarson as its new Chief Operating Officer (COO), further strengthening the company’s leadership team as it continues to expand its global operations and product portfolio. Thorvardarson brings extensive experience in electronics engineering, operational management and business leadership. A Computer and Electronics Engineer by training, he has built his career within a Danish high-tech SME specializing in functional testing and simulation solutions for the space and defense industry. Progressing from student employee to Hardware Engineer, Project Manager, Department Head and ultimately CEO for the past eight years, he has proven hands-on expertise across engineering, product development, manufacturing and management. | 06.07.2026 13:00:00 | Jul | news_2026-07-15_8.jpg | \images\news_2026-07-15_8.jpg | https://danisense.com/ | danisense.com |
| Second Managing Director appointed | The German custom magnetics company Schmidbauer Tr... | 13904 | People | Second Managing Director appointed | The German custom magnetics company Schmidbauer Transformatoren und Gerätebau has appointed Florian Ehgartner as an additional managing director. He will lead the company alongside the managing director, Dominik Reichl. As a managing director with sole power of representation, Florian Ehgartner will assume responsibility in particular for operational areas, including materials management and IT. Dominik Reichl will in future focus more closely on product development, sales and the company’s strategic direction. Florian Ehgartner previously served as Head of Business Unit at the globally active Sumida Group. His career within the group began as a hands-on development engineer at VOGT and saw him steadily progress to positions of leadership and responsibility. Most recently, he was responsible for key operational and strategic units in German-speaking countries. At the same time, he remains an authorised signatory at SUMIDA Components & Modules GmbH. In his new role at Schmidbauer, he will focus in particular on driving forward the further integration and consolidation of the companies’ activities. Schmidbauer is part of the Sumida group of companies. Schmidbauer aims to increasingly establish itself as a global partner for customised inductive components in the high-power sector – particularly for higher volumes and demanding industrial applications. | 06.07.2026 09:00:00 | Jul | news_2026-08-01_4.jpg | \images\news_2026-08-01_4.jpg | https://www.schmidbauer.net/en/ | schmidbauer.net |
| Joint Efforts on Advancing Medium-Frequency Transformers for Solid-State Transformers | Sumida and Infineon Technologies are jointly advan... | 13893 | Industry News | Joint Efforts on Advancing Medium-Frequency Transformers for Solid-State Transformers | Sumida and Infineon Technologies are jointly advancing next-generation medium-frequency transformer (MFT) solutions as a key enabler for Solid-State Transformer (SST) architectures. This collaboration combines Infineon’s leadership in power semiconductor technologies with Sumida’s expertise in high-performance magnetics, addressing the rapidly evolving requirements of electrification, grid modernization, and ultra-fast charging infrastructure. SST systems represent a paradigm shift in power conversion by enabling higher efficiency, reduced system size, and enhanced controllability. At the core of these systems, medium-frequency transformers operate at significantly higher switching frequencies compared to conventional transformers, enabling significant size and weight reduction, improved power density and efficiency, enhanced bidirectional power flow capabilities, and integration into modular, scalable power architectures. Sumida’s magnetics design capabilities, particularly in core materials, winding technologies, thermal optimization and fulfilling the challenging isolation requirements of MVAC Input are closely aligned with Infineon’s latest wide-bandgap semiconductor technologies, ensuring optimal system performance, by using up to 3.3 kV CoolSiC™ devices. A key milestone of this collaboration was showcased at PCIM Europe 2026 in Nuremberg, one of the leading international exhibitions for power electronics. The positive industry feedback at PCIM underscores the growing relevance of integrated SST solutions and validates the collaboration’s technological direction. The joint effort between Infineon and Sumida exemplifies a cooperative, forward-looking approach to innovation in power electronics. By combining complementary strengths, both companies are accelerating the development of highly efficient, compact, and scalable SST solutions - paving the way for the next generation of electrified infrastructure. | 05.07.2026 14:00:00 | Jul | news_2026-07-15_9.jpg | \images\news_2026-07-15_9.jpg | https://www.sumida.com/ | sumida.com |
| Safety Power Management IC for Electromechanical Braking | Allegro MicroSystems introduced the A81415, an ASI... | 13895 | Product Release | Safety Power Management IC for Electromechanical Braking | Allegro MicroSystems introduced the A81415, an ASIL-D-certified Power Management IC (PMIC) to integrate a wheel-speed sensor interface. The device provides electromechanical braking (EMB) designers with a simplified, single-chip power and sensing foundation for next-generation brake-by-wire systems. With an on-chip wheel-speed sensor interface (WSSI), the A81415 safety PMIC decodes standard 2-level, 2-level Pulse Width Modulation (PWM), and 3-level AK protocols (standard and high-resolution) without complicated analog circuitry or a separate decoder IC. By incorporating a fully integrated buck-boost pre-regulator, five Low-Dropout (LDO) regulators, and a single-inductor architecture that requires no external switches or diodes, the A81415 eliminates up to nine external components and unlocks up to $4 in semiconductor bill-of-materials (BOM) savings per vehicle, delivering meaningful cost advantages at OEM production scale. This level of integration opens up more than 50% of usable board space to provide the brake caliper with critical design headroom. Because the physical layer of the wheel-speed data is handled internally by the PMIC and the decoded data is shared over a Serial Peripheral Interface (SPI), the A81415 trims latency in the safety-critical loop and frees MCU bandwidth for faster braking response. Low-noise power rails are explicitly tuned to power Allegro’s XtremeSense™ TMR angle sensors and ensure the entire commutation and clamping-force signal chain is optimized as one coherent, high-resolution system from wheel to caliper. | 02.07.2026 07:30:00 | Jul | news_2026-07-15_12.jpg | \images\news_2026-07-15_12.jpg | https://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2026/safety-pmic-with-integrated-wheel-speed-sensor-interface-a81415 | allegromicro.com |
| Fab for Power Semiconductors and Analog/Mixed-Signal Technologies Opened | Infineon Technologies opened the Smart Power Fab i... | 13885 | Industry News | Fab for Power Semiconductors and Analog/Mixed-Signal Technologies Opened | Infineon Technologies opened the Smart Power Fab in Dresden several months ahead of schedule. The new plant, with an investment volume of five billion euros, is the largest single investment in Infineon’s history and one of the largest investment projects in Germany, creating 1,000 new, direct jobs. The fab doubles Infineon’s manufacturing capacities at the Dresden site, thus creating the world’s largest factory for intelligent power semiconductors and analog / mixed-signal technologies. "We’re opening our new plant at just the right time," says Jochen Hanebeck, CEO of Infineon. "Our Smart Power Fab is creating urgently needed capacities for the key technologies of the future, for everything from energy supply for AI data centers to software-defined vehicles and renewable energies. Infineon is thus giving an important impulse in making the global AI revolution possible and securing supply chains in critical industries. By taking this step, we are strengthening our global vanguard position as a leading manufacturer of power semiconductors and analog / mixed-signal technologies." The building itself and the machine layout were pre-planned and optimized using a digital twin. System and process clearance is supported by AI algorithms. Furthermore, the connection to the Infineon plant in Villach as "One Virtual Fab" makes qualification of processes and products significantly faster than in the past. With the expansion, Infineon Dresden is further strengthening its position as a worldwide leading site for power semiconductors and analog / mixed-signal technologies; at the same time, it is also bolstering the European leadership role in the overall semiconductor cluster "Silicon Saxony" in and around Dresden. | 02.07.2026 06:00:00 | Jul | news_2026-07-15_1.jpg | \images\news_2026-07-15_1.jpg | https://www.infineon.com/press-release/2026/ifxpr202607-117 | infineon.com |
| Vincenzo Salmeri appointed President | Vincenzo Salmeri, an international senior executiv... | 13886 | People | Vincenzo Salmeri appointed President | Vincenzo Salmeri, an international senior executive with nearly 30 years of experience within Schneider Electric, has been appointed as the new President of Current/OS, the independent global nonprofit foundation bringing together manufacturers, technology leaders and electrical experts to enable the safe and large-scale deployment of Direct Current (DC) in electrical distribution systems. His appointment marks Current/OS’ transition into a new phase of international development to accelerate the safe, scalable and interoperable adoption of Direct Current. Mr. Salmeri’s appointment comes at a pivotal moment for the energy transition. As electrification accelerates, driven by renewable energy, storage, electric mobility, digital infrastructure and the rapid growth of data centers, DC is emerging as a key enabler of more efficient, flexible and resilient electrical architectures. Current/OS aims to provide the shared rules, reference architectures and interoperability framework needed to make DC systems safe, repeatable and scalable across the market. | 29.06.2026 07:00:00 | Jun | news_2026-07-15_2.jpg | \images\news_2026-07-15_2.jpg | https://currentos.org/ | currentos.org |
| Patent for DC Power Junction System Technology | Custom Electronics announced it has received a pat... | 13890 | Industry News | Patent for DC Power Junction System Technology | Custom Electronics announced it has received a patent for its proprietary junction system technology designed for safely connecting DC power sources in parallel while preventing batteries from discharging into one another. Designed as an agnostic junction platform, the technology can be utilized with batteries, solar power systems and other DC energy sources, which creates new opportunities for scalable power distribution and energy storage applications. The patented junction unit is engineered to connect multiple DC sources and energy storage devices to a common power bus while utilizing advanced control and protection circuitry to safely manage current flow throughout the system. The technology allows for hot-swapping of connected power sources in parallel, enabling continuous operation without interruption while improving overall system performance, safety and reliability. It creates opportunities for future energy solutions, such as battery banking systems, renewable energy integration and residential or commercial power appliances that can manage multiple energy sources through a single platform. By enabling batteries, solar arrays and other DC power sources to operate together safely and efficiently, the technology establishes a flexible foundation for next-generation energy storage and power management products. | 24.06.2026 11:00:00 | Jun | news_2026-07-15_6.jpg | \images\news_2026-07-15_6.jpg | https://www.customelec.com/ | customelec.com |
| Center for Microsystems Technology | A 127.4 million Euro funding provided to X-FAB MEM... | 13888 | Industry News | Center for Microsystems Technology | A 127.4 million Euro funding provided to X-FAB MEMS Foundry by the German federal government and the Free State of Thuringia will support the expansion of manufacturing capacity through the construction of a cleanroom at the Erfurt site. The "Fab4Micro" project is among the most significant industrial investments made in Thuringia in recent years. In December 2025, the European Commission gave the green light for the funding. The project is an important component of the European Chips Act (ECA), through which Europe aims to strengthen its technological independence in semiconductors. The new facility is scheduled to begin initial production by the end of 2028. This will enable X-FAB to expand its production capacity for micro-electro-mechanical systems (MEMS), highly integrated microsystems, and photonics. MEMS are systems that comprise electronic, sensing and mechanical elements at the micro- and nanometer scale, used for example in smartphones, vehicles, medical devices, and other applications. The investment will also establish new manufacturing capabilities for high-performance microsystems that use heterogeneous integration technology to combine numerous electronic and optical functions in a single component, required for data centers or optical systems. The Fab4Micro project will also create new highly skilled jobs in the field of microsystems. | 23.06.2026 09:00:00 | Jun | news_2026-07-15_4.png | \images\news_2026-07-15_4.png | https://www.xfab.com/news/details/article/grant-notification-presented-x-fab-develops-erfurt-site-into-a-center-for-microsystems-technology | xfab.com |
| Award recognises strong Collaboration, Customer Support and Continued Growth | TTI IP&E – Europe has received the Honeywell IA Eu... | 13887 | Industry News | Award recognises strong Collaboration, Customer Support and Continued Growth | TTI IP&E – Europe has received the Honeywell IA Europe IS Partner of the Year Award at the Honeywell IA Europe Elevate 2026 partner event, held in Prague. The award recognises TTI IP&E – Europe’s contribution to Honeywell’s business growth in Europe. It also highlights the value of close day-to-day alignment between the two company teams in supporting customers, developing new opportunities and maintaining the inventory needed for responsive supply. Honeywell technologies available through TTI Europe include a broad range of solutions for demanding applications across industrial, transportation, medical, aerospace and defence markets. The portfolio covers products such as pressure, force, flow, position, speed, humidity, temperature and airflow sensors, as well as robust switch technologies for industrial and mobility applications. "We are truly honoured that TTI IP&E – Europe has received the Honeywell Partner of the Year Award," said Ronald Velda, Supplier Marketing Director – Connectors, Emech and Sensors at TTI IP&E – Europe. "This recognition reflects the outstanding trust, partnership, and cooperation between our teams, which has fuelled remarkable business growth and customer satisfaction. We sincerely appreciate the ongoing support and commitment from the Honeywell team in Europe to our joint business. TTI remains fully committed to further investing in inventory and continuing to develop a robust project pipeline to support our joint growth ambitions. We deeply value this prestigious award and look forward to strengthening our partnership with Honeywell in the years to come." | 23.06.2026 08:00:00 | Jun | news_2026-07-15_3.jpg | \images\news_2026-07-15_3.jpg | https://www.ttieurope.com/content/ttieurope/en/manufacturers/honeywell.html | ttieurope.com |
| 500 W Microinverter Reference Platform | Eggtronic, a semiconductor company providing IC co... | 13884 | Product Release | 500 W Microinverter Reference Platform | Eggtronic, a semiconductor company providing IC controllers for power electronics, and Renesas Electronics released a jointly developed 500 W solar microinverter reference platform. The design combines Eggtronic’s EPIC™ mixed-signal controller technology with Renesas’ bidirectional Gallium Nitride switch to demonstrate an architecture to support microinverter OEMs and system manufacturers in developing next-generation solar microinverters and power conversion applications. The reference platform achieves 96.1 % average efficiency under CEC standards and 95.9 % under EU standards, validating the performance potential of a single-stage DC/AC topology. As photovoltaic (PV) module output continues to increase beyond 400 W, microinverter manufacturers must continuously optimize efficiency, thermal performance, component integration, and overall system cost. At the core of the platform is Eggtronic’s proprietary EPIC mixed-signal controller EPIC2ACO01. The controller executes patented Variable Frequency Modulation (VFM) and current-mode strategies designed to maintain Zero-Voltage Switching (ZVS) across the full load range. This single stage approach minimizes BOM cost, switching losses, reduces reactive power circulation, and maintains low Total Harmonic Distortion (THD), while enabling operation at switching frequencies up to 1 MHz - significantly reducing the size of magnetic components. The platform leverages Renesas’ TP65B110HRU bidirectional GaN switch, integrated in a common-drain configuration suitable for cycloconverter-based AC switching. | 22.06.2026 13:30:00 | Jun | news_2026-07-01_17.jpg | \images\news_2026-07-01_17.jpg | https://www.eggtronic.com/eggtronic-introduces-high-efficiency-500w-microinverter-reference-platform-with-renesas/ | eggtronic.com |
| Certified R&D and Business Center in Drammen, Norway | Delta announced the official opening of its comple... | 13889 | Industry News | Certified R&D and Business Center in Drammen, Norway | Delta announced the official opening of its completely revitalized Research and Development (R&D) and business office facility in Drammen, Norway. Having achieved the prestigious BREEAM-NOR Excellent certification, the comprehensive deep-renovation project transforms a historic 50-year-old power electronics facility into a cutting-edge, 7,460-square-meter sustainable innovation hub. Designed to accommodate up to 210 employees, the facility serves as a vital development hub for Delta’s information and communications technology (ICT) power solutions, specifically advancing next-generation data center and telecom infrastructure. It integrates Delta’s own energy-efficient technologies to conquer the unique demands of high-capacity power testing, achieving an anticipated greenhouse gas emission reduction of over 50% compared to reference buildings. In tandem with this landmark inauguration, Delta announced a strategic change to its local legal entity name, transitioning from Delta Electronics Norway AS to Eltek Norway AS to significantly strengthen market opportunities. This renaming perfectly combines Eltek’s renowned local expertise with Delta’s vast global resources. By aligning these strengths, the company aims to deliver industry-leading technology to its customers, accelerate time-to-market, and reinforce a powerful "local for global" strategy from the Drammen hub. | 18.06.2026 10:00:00 | Jun | news_2026-07-15_5.jpg | \images\news_2026-07-15_5.jpg | https://www.delta-emea.com/en-gb/news/delta-inaugurates-business-center-in-drammen | delta-emea.com |
| Probes for High-Current Waveform Measurement | HIOKI Europe introduces the CT6704 and CT6705 curr... | 13875 | Product Release | Probes for High-Current Waveform Measurement | HIOKI Europe introduces the CT6704 and CT6705 current probes for oscilloscopes built for current-waveform observation in power electronics development and power supply evaluation. The CT6704 measures up to 200 A over a frequency range of DC to 30 MHz; the CT6705 measures up to 500 A over DC to 15 MHz. Both connect to any oscilloscope via a standard BNC connection at 0.01 V/A. These probes address two key challenges in modern power electronics: maintaining a stable zero baseline with negligible temperature drift and measuring high currents across a substantially wider frequency range than the previous probe generation. HIOKI realizes this performance by applying the fluxgate sensing principle from its precision current sensors to high-bandwidth probes. Both probes output their signal at 0.01 V/A via a standard BNC connector and can be used directly with oscilloscopes, Memory Recorders, and DAQ systems. The offset temperature coefficient is specified at ±0.1 mV/°C for reliable baseline stability over temperature, while the amplitude accuracy has doubled from ±1.0% to ±0.5% of reading. CT6704 combines 200 A rated current with 30 MHz bandwidth, corresponding to 11.6 ns rise time, and CT6705 combines 500 A rated current with 15 MHz bandwidth, corresponding to 23.3 ns rise time. Typical examples are GaN and SiC power converter development, EV powertrain and inverter testing or switching power supply design and verification. Other major applications are motor drive and industrial power electronics testing, data center backup power and load transient evaluation, renewable energy inverter validation as well as laboratory waveform analysis. | 18.06.2026 06:30:00 | Jun | news_2026-07-01_8.jpg | \images\news_2026-07-01_8.jpg | https://shop.hioki.eu/R-D-Production/Current-Sensing/Wideband-Current-Probes/ | hioki.eu |
| Nanocrystalline EMI Shielding Sheets | Würth Elektronik is expanding its EMC product port... | 13883 | Product Release | Nanocrystalline EMI Shielding Sheets | Würth Elektronik is expanding its EMC product portfolio with nanocrystalline WE-FNCS sheets. The flexible and thin nanocrystalline layers, protected by a PET cover layer, are supplied in the form of adhesive tapes and strips. They attenuate electromagnetic interference signals in the frequency range from around 10 Hz to 120 MHz. The sheets can be used as a simple, cost-effective way to make housings for electronic devices EMC compliant without the need for mu-metal. Both emissions and external interference are challenges for developers during EMC testing, when demonstrating compliance with standards such as CISPR 32, especially in the lower frequency range. Components such as power transformers, common-mode chokes (CMCs), DC/DC converters, inverters, switched-mode power supplies, Hall effect sensors, as well as medical systems including MRI scanners, can generate unwanted magnetic fields or be affected by them. WE-FNCS is a magnetic absorber specifically developed to suppress low-frequency EMI. Its nanocrystalline structure ensures high magnetic permeability and flux saturation, ensuring uniform attenuation across the entire low- and mid-frequency range. By adapting the number of internal nanocrystalline layers, the absorption performance can be scaled to meet the requirements of different applications. Multi-layer configurations with tailored permeabilities help optimize the shielding effectiveness of a solution while keeping it thin, flexible and easy to integrate. This is particularly beneficial in applications where space is limited. Würth Elektronik can supply WE-FNCS with customized formats and layer configurations. | 17.06.2026 12:30:00 | Jun | news_2026-07-01_16.jpg | \images\news_2026-07-01_16.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-fncs | we-online.com |
| Event on Test & Measurement for Aerospace Applications | Experience on 7 July 2026 in Berlin how precise te... | 13873 | Event News | Event on Test & Measurement for Aerospace Applications | Experience on 7 July 2026 in Berlin how precise test and measurement technology supports demanding aerospace applications. Look forward to practical technical presentations in English, direct exchange with experts and an equipment exhibition with our partners and manufacturers. The focus will be on specific real-world applications, technical solution approaches and your individual questions. | 17.06.2026 11:00:00 | Jun | news_2026-07-01_6.jpg | \images\news_2026-07-01_6.jpg | https://www.datatec.eu/de/en/ad-seminar-berlin-2026?shopSwitchInitiated=1#vortrag | datatec.eu |
| Manufacturer of Transformer Insulation Kits and Components Acquired | Hitachi Energy announced a major expansion of its ... | 13868 | Industry News | Manufacturer of Transformer Insulation Kits and Components Acquired | Hitachi Energy announced a major expansion of its North American transformer insulation business through signing a definitive agreement to acquire Canduct Group. The investment addresses a bottleneck in the region’s transformer supply chain by expanding the company’s North America regional insulation and components capabilities, strengthening resilience, and accelerating the delivery of essential grid infrastructure. Hitachi Energy’s acquisition of Canduct is expected to close at the beginning of the third calendar quarter of 2026, subject to customary closing conditions. Canduct manufactures transformer insulation kits and components, serving OEMs and repair companies across the U.S. and Canada. Founded in 1982, the company has supplied high-quality transformer insulation solutions to Hitachi Energy for over two decades. By integrating Canduct’s operations and more than 300 employees, Hitachi Energy will expand its capabilities to deliver critical transformer components needed to support the unprecedented growth in electricity demand. | 17.06.2026 06:00:00 | Jun | news_2026-07-01_1.jpg | \images\news_2026-07-01_1.jpg | https://www.hitachienergy.com/news-and-events/press-releases/2026/06/hitachi-energy-bolsters-the-regional-transformer-market-with-strategic-investment-in-north-america | hitachienergy.com |
| PFC Controller targets Battery Chargers, Power Adapters, and Power Supplies | STMicroelectronics’ L6462A transition-mode (TM) po... | 13898 | Product Release | PFC Controller targets Battery Chargers, Power Adapters, and Power Supplies | STMicroelectronics’ L6462A transition-mode (TM) power-factor correction (PFC) controller cuts bill-of-materials (BOM) costs while enhancing efficiency, enabling consumer products and power supplies up to 250W to meet stringent eco-design norms. The L6462A uses a current generator and shaper to produce a sinusoidal reference, instead of a conventional voltage sensor and analog multiplier, permitting boost-PFC converters without external voltage-divider components. In addition, the IC coordinates the PFC conversion cycles by sensing inductor demagnetization via the gate-driver output and hence requires no auxiliary inductor winding or interface components.In addition to lowering BOM, the L6462A’s innovative current shaping and demagnetization sensing minimizes distortion (THD) and enhances efficiency, particularly at intermediate and light loads. The controller thus permits economical PFC with superior performance, targeting high-end battery chargers, power adapters, and power supplies for domestic and consumer products like flat-panel televisions and lighting drivers. The idle current is below 60μA, helping equipment meet strict eco-design rules on standby power. At full load, the L6462A operates in quasi-resonant mode - valley switching - to minimize power dissipation. As the load is reduced, valley skipping progressively reduces the operating frequency to maintain efficiency. In addition, the controller has a deep burst-mode threshold that ensures smooth dimming in LED-lighting applications. | 16.06.2026 10:30:00 | Jun | news_2026-07-15_15.jpg | \images\news_2026-07-15_15.jpg | https://www.st.com/content/st_com/en/campaigns/unlock-efficient-lighting-design-with-l6462a-asp-mchvcon.html?icmp=tt49864_gl_pron_jun2026 | st.com |
| Fast 1200 V Rectifiers | Vishay Intertechnology expanded its Gen 7 platform... | 13910 | Product Release | Fast 1200 V Rectifiers | Vishay Intertechnology expanded its Gen 7 platform of 1200 V FRED Pt® Hyperfast rectifiers with six additional devices in the eSMP® series SMPC HV package. Suited for industrial, automotive, and energy applications, the 1 A, 2 A, and 3 A rectifiers aim to offer the best trade-off between reverse recovery charge (Q<sub>rr</sub>) and forward voltage drop for devices in their class, but also to provide the lowest junction capacitance and recovery time. The rectifiers released include the VS-E7SX0112-M3V, VS-E7SX0212-M3V, and VS-E7SX0312-M3V, and AEC-Q101 qualified VS-E7SX0112HM3V, VS-E7SX0212HM3V, and VS-E7SX0312HM3V. To reduce switching losses and increase efficiency, the devices combine a recovery time of 50 ns with Q<sub>rr</sub> down to 105 nC typical, forward voltage drop down to 1.45 V, and junction capacitance down to 7.25 pF. The rectifiers offer non-repetitive peak surge current up to 70 A in a compact package measuring 4.3 mm × 6.5 mm with a 1.1 mm profile, which is footprint-compatible with the TO-277A. Combined with a minimum 5.4 mm creepage distance and molding compound with a comparative tracking index (CTI) ≥ 600 (Material Group I), the devices reduce component counts and lower BOM costs based on IEC 60664-1 requirements for high voltage applications. The devices will serve as clamp, snubber, and freewheeling diodes in flyback auxiliary power supplies and high frequency rectifiers for bootstrap driver functionality. Typical applications for the devices include industrial drives and tools, on-board chargers and motors for electric vehicles (EV), energy generation and storage systems, and more. | 16.06.2026 10:30:00 | Jun | news_2026-08-01_10.jpg | \images\news_2026-08-01_10.jpg | https://www.vishay.com/en/company/press/releases/2026/VS-E7SX0112-M3V-et-al/ | vishay.com |
| High-Isolation Gate Drive Converters | Murata introduces its MGJ1T series, a range of 6 k... | 13880 | Product Release | High-Isolation Gate Drive Converters | Murata introduces its MGJ1T series, a range of 6 kV DC isolated 1 W surface-mount DC/DC converters. It is designed for powering high-side and low-side gate drive circuits in inverter, power conversion and motor drive systems. The MGJ1T series has been developed for increasing system voltages and switching speeds in applications such as energy storage systems (ESS/BESS), microgrids, EV charging infrastructure, industrial motor drives, and high-voltage power converters. Configured as a 1 W solution, the converters support nominal input voltages of 12 V, 15 V and 24 V, and provide regulated dual outputs of +15 V /-3 V, +15 V /-5 V and +18 V /-2.5 VEach device is 100% production ‘HiPot’ tested to 6 kV<sub>DC</sub> for one second and qualified to the same level for one minute, ensuring robust dielectric strength. The series is recognised to UL62368-1 and provides reinforced insulation with a working voltage of 800 V<sub>rms</sub>, for applications requiring high levels of protection with a continuous barrier withstand voltage of 2.2 kV<sub>DC</sub>. Internal construction achieves 14 mm creepage and clearance, supporting reliable operation in high-voltage environments. The MGJ1T shows a CMTI greater than 200 kV/μs. Combined with an isolation capacitance of typically 2.5 pF, this reduces high-frequency noise coupling across the isolation barrier and supports stable switching in SiC-based designs. Operating at a switching frequency of approximately 700 kHz, the converters achieve a typical ripple and noise of 10 mV<sub>p-p</sub> and efficiencies up to 77 %. | 09.06.2026 23:33:00 | Jun | news_2026-07-01_13.jpg | \images\news_2026-07-01_13.jpg | https://www.murata.com/en-eu/news/power/isolated-gate-drive-power/2026/0609-2 | murata.com |
| Top-Side Cooling Package for SiC MOSFETs | ROHM has developed the TSC3PAK (14.00 × 18.5... | 13881 | Product Release | Top-Side Cooling Package for SiC MOSFETs | ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50 mm³) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, this product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L)), which, in turn, contributes to greater efficiency and reliability in power conversion circuits for onboard chargers (OBCs) and electric compressors used in xEVs (electric vehicles). Conventional SiC devices have generally relied on through-hole packages, which provide excellent heat dissipation during high-power operation. However, through-hole type devices involve manual mounting processes, and their form factor makes it difficult to achieve a lower package profile. Against this backdrop, surface-mount SiC devices compatible with automated mounting have begun gaining adoption. To address these issues, the new TSC3PAK delivers heat dissipation performance comparable to through-hole technology such as TO-247 in a surface-mount package. The TSC3PAK offers a creepage distance of 6.66 mm, allowing it to accommodate an AC peak voltage of 1200 V in a Pollution Degree 2 environment while maintaining compatibility with products widely adopted in the market. By enabling safe insulation design in high-voltage applications, the TSC3PAK also contributes to reduced mounting costs and higher reliability. | 09.06.2026 22:22:00 | Jun | news_2026-07-01_14.jpg | \images\news_2026-07-01_14.jpg | https://www.rohm.com/news-detail?news-title=2026-06-09_news_tsc3pak&defaultGroupId=false | rohm.com |