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Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers

Learn more:
horiba.com

Industry News
2025-06-11

Wide bandgap semiconductors such as SiC, GaN, and diamond are critical materials for next-generation power electronics, optoelectronics, and quantum technologies. However, their performance is highly sensitive to internal stress, strain, and defects introduced during growth and processing. In this webinar, you can explore how Raman, Photoluminescence (PL), Time-Resolved Photoluminescence and Cathodoluminescence can be powerful, non-destructive tools for characterizing these properties with high spatial and spectral resolution. It is discussed how Raman spectroscopy can reveal information about crystal quality, phonon shifts due to strain, and temperature effects, while PL provides insight into electronic and optical properties, impurity levels, and defect states. Real-world case studies and application examples highlight how these techniques can be used to optimize material growth, improve device yield, and accelerate R&D.

1200 V SiC Diodes: Manufacturing Collaboration between Indian and Taiwanese Companies

Learn more:
ruttonsha.com

Industry News
2025-06-05

RIR Power Electronics announces the successful production expansion and shipment of 1200 V SiC diodes from Taiwan. This was achieved through a strategic collaboration with a contract fab at Pro Asia Semiconductor Corporation (PASC), Taiwan and by leveraging technology IP that RIR Power had acquired from Sicamore Semi, USA. The product portfolio includes 1200 V Schottky Barrier Diodes (SBDs) ranging from 2 A to 60 A, addressing the most common ratings used across multiple applications and markets globally. Besides serving existing domestic Indian and the USA customers, shipping from Taiwan also provides improved access to strategic high-growth markets for SiC devices in the South East Asian region. RIR Power's SiC technology and portfolio are the result of a comprehensive technology transfer agreement signed with Sicamore Semi in October 2024. The agreement granted RIR Power exclusive rights to manufacture, market and commercialize SiC diodes, MOSFETs and IGBTs using Sicamore's proven IP and process know-how. Originally developed for 4-inch wafers, the technology has been successfully adapted for 6-inch wafer production. The scale-up was achieved with technical support from Vortex Semi, USA and PASC. The 1200 V SiC diodes, produced at PASC's fabrication facility in Taiwan, have been shipped to India and validated to meet global industry standards. RIR Power has already secured purchase orders from key suppliers to the commercial, industrial and defence sectors. This achievement aligns with India's Make in India initiative, reinforcing the nation's semiconductor supply chain and reducing reliance on imports for critical defence technologies. RIR Power's new SiC semiconductor facility in Odisha, is set to further enhance India's indigenous manufacturing capabilities.

Online Calibration Portal for brand agnostic Calibration Services for Current Transducers

Learn more:
danisense.com

Industry News
2025-06-05

Danisense has introduced its 'Online Calibration Portal' to offer brand agnostic calibration services for current transducers and make the whole process as smooth and easy as possible. Via the personal online portal, which is available on the company's website, customers can book their brand agnostic calibrations for current transducers to be performed in the ISO 17025 accredited Calibration Lab from Danisense, located at the company's Taastrup headquarters in Denmark. The 'Online Calibration Portal' provides customers with regular online and email updates during the calibration process, calibration reports, detailed order tracking as well as an online payment function, etc.

Digital Multimeter Series

Learn more:
rohde-schwarz.com

Product Release
2025-06-03

Rohde & Schwarz presents the R&S UDS digital multimeter series, which can display three measurements simultaneously and offer versatile measurement functions and various interfaces for remote control. Models are available with a digit resolution of 5 1/2 as well as 6 1/2, the latter providing a basic DC accuracy of 0.0075%. The R&S UDS series replaces the established R&S HMC8012 digital multimeter, offering more accuracy and an updated intuitive user interface. With voltage ranges extending up to 1000 V DC and 750 V AC and a current capacity of 10 A, these multimeters come with a 3.5" OVGA color display. For remote control, the new multimeters offer a variety of interfaces, including USB, IEEE-488 (GPIB) for SCPI-based commands, and LAN (Ethernet).

APEC 2026: Call for Technical Sessions Digest Submissions

Learn more:
apec-conf.org

Event News
2025-06-03

Texas, from March 22-26, 2026, continues the long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer. Interested authors wishing to present a paper must submit a digest for consideration by the deadline. To facilitate higher quality digest and final manuscript submissions, APEC 2026 offers significantly expanded submission windows for both the phases. Topics of interest are divided into fourteen tracks, each track with a diverse set of subtopics: AC/DC Converters, DC/DC Converters, DC/AC Inverters, Devices and Components, Magnetics, Power Electronics Integration and Manufacturing, Control, Modeling and Simulation, Motor Drives, Power Electronics for Utility Applications, Renewable Energy Systems, Wireless Power Transfer, Transportation Power Electronics, Power Electronics Applications. "APEC provides an ideal balance between academic and industrial research and is a meeting ground for these two areas, unlike any other power electronics conference," said Dhaval Dalal, APEC 2026 Program Chair. "APEC tops the list of the IEEE power electronics conferences for average paper citations - as of May 2025, 7.4 for APEC 2019 and 4.8 for APEC 2022." The Technical Sessions digest should explain the problem that will be addressed by the paper, its major results and how it is different from the closest existing literature. Technical Sessions papers presented at APEC must be original material and not have been previously presented or published.

Radiation-hardened GaN Transistors

Learn more:
infineon.com

Product Release
2025-05-29

Infineon announced the first of a new family of radiation hardened Gallium Nitride transistors, fabricated at Infineon's own foundry, based on its CoolGan™ technology. Designed to operate in harsh space environments, it is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794. These radiation hardened GaN HEMT devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. The first three product variations in this radiation-hardened GaN transistor line are 100 V / 52 A devices featuring an R_DS(on) of 4 mΩ (typical) and total gate charge of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm²/mg (Au ion). Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794. Infineon emphasizes that it is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications.

Flyback Transformers

Learn more:
sumida.com

Product Release
2025-05-28

Sumida announces its CEP1311F Flyback Transformers, designed specifically for use with "no-opto" isolated flyback circuits, such as the Analog Devices LT8304-1 reference design. This isolated flyback transformer is suited for industrial, automotive, medical, and telecom applications. The CEP1311F (13324-T083 to13324-T087) transformers have single outputs, while the CEP1311F (13324-T196) provides dual isolated outputs. This dual-output CEP1311F (13324-T196) flyback transformer is optimized for LT8304-1 applications. It enables isolated, no-opto flyback conversion with 110-V outputs and 15-V input. Custom configurations are also available. The single-output CEP1311F (13324-T083 to 13324-T087) is available in five output voltages, ranging from 3.3 V to 400 V. The dimensions are 21 mm x 21 mm x 11.8 mm, and the operating temperature range is -40 °C to 125 °C. In addition, a 1500 V_rms Hi-Pot rating provides electrical isolation for enhanced safety. The transformers also boast a Moisture Sensitivity Level (MSL) of 1 for unlimited floor life under standard environmental conditions.

Shielded Power Inductors

Learn more:
bourns.com

Product Release
2025-05-27

Bourns introduced the SRP2512CL and SRP3212CL Series Shielded Power Inductors that are claimed to feature "low AC Resistance and low DC Resistance, delivering reduced losses and high efficiency." The components were designed to meet the latest DDR5 memory technology specifications such as those in DDR5 Power Management Integrated Circuits (PMIC) and client DDR5 modules in desktop PCs, notebooks and tablets. The devices operate in the temperature range of -40 to +125 °C, and are available with inductance ratings of up to 1.5 µH in 3030 and 2520 package sizes.

PCIM booth raises €10,000 for a worthy cause

Learn more:
vincotech.com

Industry News
2025-05-26

Vincotech staged a charity benefit at this year's PCIM Europe trade fair. The company and its partners pledged a donation for every visitor who competed in a virtual reality memory game, raising 10,000 € for a Plan International Germany project in Malawi called "Education Empowers Girls!" Vincotech has made a tradition of hosting engaging charity events at the fair. Activities such as wall climbing, Sudoku, and this latest VR memory challenge – a crowd favorite – attracted hundreds of enthusiastic fairgoers. This year's proceeds go to a Plan International Germany project aiming to improve access to education and outcomes for girls in Malawi's Lilongwe and Kasungu districts. Running from October 2022 to September 2026, the initiative goes to create inclusive, supportive learning environments where girls and boys can realize their full potential. In a statement Vincotech explains why it chose this charity project: "Empowering girls through education changes lives – and not just individuals'; it transforms entire families and communities for generations to come."

AI-powered Design Assistant

Learn more:
frenetic.ai

Product Release
2025-05-22

Frenetic Electronics announced Frenetic AI, an AI-powered assistant that helps engineers design power converters. The company has also announced significant upgrades to Frenetic Magnetic Simulator, its cloud platform that allows engineers to simulate and design high-frequency inductors and transformers up to 95 % accuracy. Frenetic AI designs the converter topology based on user constraints and automatically generates electrical schematics and simulation files (LTspice, PLECS). It also suggests suitable off-the-shelf or custom magnetics. Currently available as a free basic version which has been beta-site tested, Frenetic AI will shortly be additionally offered as a PRO version is coming soon, which will include premium features such as planar transformer design, off-the-shelf component suggestions and additional design insights. Frenetic AI can integrate with Frenetic Magnetic Simulator for advanced magnetic component design, but can also be used as a standalone module. Frenetic Magnetic Simulator has also been upgraded. The original platform delivers advanced modeling of copper and core losses, the superposition of AC signals with high-frequency components and material and core selection based on the application's needs. Latest add-ons include a machine-learning-based model for calculating foil winding losses. The recent version of Frenetic Magnetic Simulator has been trained on 5,000 FEM simulations across many designs, and delivers 12 % median relative error, with millisecond response times.

IPCEI ME/CT CONNECT 2025

Learn more:
ipcei-me-ct.eu

Event News
2025-05-21

IPCEI ME/CT CONNECT 2025, being held on June 16 in Grenoble, France, is a key gathering for project partners, national authorities, and Member States to highlight achievements, share updates, and build new collaborations across Europe's strategic microelectronics and communication landscape. Held in conjunction with the IPCEI on Microelectronics and Communication Technologies, this event aims to strengthen Europe's leadership in secure, sustainable, and sovereign semiconductor-based technologies.

12 kW Power Supply Unit Reference Design for AI Data Centers

Learn more:
navitassemi.com

Product Release
2025-05-21

Navitas Semiconductor has announced a 12 kW power supply unit (PSU) "designed for production" reference design for hyperscale AI data centers with high-power rack densities of 120 kW achieving 97.8 % Efficiency. The 12 kW PSU complies with ORv3 specifications and OCP guidelines. It utilizes Gen-3 Fast SiC MOSFETs, an "IntelliWeave" digital platform, and high-power GaNSafe ICs configured in 3-phase interleaved TP-PFC and FB-LLC topologies. The 3-Phase interleaved totem-pole power factor correction (TP-PFC) is powered by Gen-3 Fast SiC MOSFETs with trench-assisted planar technology. IntelliWeave™ digital control provides a hybrid control strategy of both Critical Conduction Mode and Continuous Conduction Mode, for light-load to full-load conditions, ensuring maximum efficiency while maintaining a simplistic design with low component count. This results in a "30% reduction in power losses compared to existing Continuous Conduction Mode solutions". The 3-phase interleaved full-bridge LLC topology is enabled by 4^th generation high-power GaNSafe™ ICs, integrating control, drive, sensing, and critical protection features that allow unprecedented reliability and robustness. GaNSafe is claimed to be "the world's safest GaN with short-circuit protection" (350 ns maximum latency), 2 kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with four pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of R_DS(ON)typ. from 18 to 70 mΩ.

Semiconductor Collaboration on Next Generation 800 V HVDC Architecture

Learn more:
navitassemi.com

Industry News
2025-05-21

Navitas Semiconductor announced a collaboration with NVIDIA on their next-generation 800 V HVDC architecture to support 'Kyber' rack-scale systems powering their GPUs, such as Rubin Ultra, enabled by GaNFast™ and GeneSiC™ power technologies. NVIDIA's next generation of 800 V DC architecture aims to establish high-efficiency, scalable power delivery for next-generation AI workloads, to ensure greater reliability, efficiency, and reduced infrastructure complexity. Today's existing data center architecture uses traditional 54 V in-rack power distribution and is limited to a few hundred kW. As power increases above 200 kW, this architecture runs into physical limits due to power density, copper requirements, and reduced system efficiency. Modern AI data centers require gigawatts (GW) of power for the increasing demand for AI computation. Nvidia's approach is to directly convert the 13.8 kV AC grid power to 800 V HVDC at the data center perimeter using solid state transformers (SST) and industrial-grade rectifiers, eliminating several AC/DC and DC/DC conversion steps, maximizing efficiency and reliability. Due to the higher voltage level of 800 V HVDC, the thickness of copper wires can be reduced by up to 45%. The 800 V HVDC directly powers the IT racks (eliminating the need for additional AC/DC converters) and is converted by DC/DC converters to lower voltages, which will drive GPUs. NVIDIA's 800V HVDC architecture is expected to improve end-to-end power efficiency up to 5%, reduce maintenance costs by 70% (due to fewer PSU failures), and lower cooling costs by directly connecting HVDC to the IT and compute racks.

LTspice Models for ESD Products

Learn more:
we-online.com

Industry News
2025-05-21

Würth Elektronik, in cooperation with the Institute of Electronics (IFE) at Graz University of Technology, now offers an LTspice model for its TVS diodes and ESD suppressors for ESD protection, based on real measurement data using TLP (Transmission Line Pulsing). This enables the actual behavior of the components to be measured under electrostatic discharge (ESD) conditions. The ready-to-use simulation files facilitate integration into SPICE-based analyses and help shorten design cycles and time-to-market. Conventional models of components for ESD protection typically rely on simplified approximations. The new models developed by Würth Elektronik and the IFE at Graz University of Technology, based on measurement data, however, reflect the actual transient properties, including snapback behavior. The snapback effect allows the voltage to be clamped to a lower level after a transient overvoltage than is possible with standard PN diodes. This is a key aspect of ESD protection, as it reduces both the overvoltage and the resulting thermal stress on sensitive electronic components, so the ability to simulate it is a critical improvement to the development process. LTspice models for realistic modelling of real component behavior during ESD events for products from the WE-TVS and WE-VE product series are now available to download.

650 V SiC MOSFETs

Learn more:
toshiba.semicon-storage.com

Product Release
2025-05-20

Toshiba Electronics Europe announces volume shipments of its 3rd generation, 650 V silicon carbide MOSFETs in the compact DFN8x8 package for industrial equipment, the TW031V65C, TW054V65C, TW092V65C, and TW123V65C. An important characteristic of Toshiba's next-generation process is the consistently low R_DS(on) temperature coefficient of the devices. The R_DS(on) x gate-drain charge (Q_gd) figure of merit (FoM), therefore, enables engineers to enhance the power density and efficiency of numerous high-voltage applications, including switched-mode power supplies (SMPSs), electric vehicle (EV) charging stations, uninterruptible power supplies (UPS), and photovoltaic (PV) inverters. The surface-mount DFN8x8 package reduces volume by more than 90 % compared to existing lead-inserted packages, such as TO-247 and TO-247-4L(X). Furthermore, the multi-pin device allows a Kelvin connection of its signal-source pin for the gate drive.

APEC 2026: Call for Papers

Learn more:
apec-conf.org

Event News
2025-05-20

APEC 2026 will take place March 22 – 26, 2026 at the Henry B. Gonzalez Convention Center in San Antonio, Texas/USA, and now the call for Technical Session Papers has started. APEC 2026 offers an expanded window for digest and final manuscript submissions, making it easier to participate. According to the organizer, "submitting your work is a strategic investment in your professional future - contribute to the evolution of power electronics, engage with a dynamic and influential community, and make a lasting impact". According to the submission requirements engineers have to review the list of topics when planning their digest in order to ensure that the work is original, not previously published, and include evidence of completed experimental work. The principal criteria in selecting digests will be the usefulness of the work to the practicing power electronic professional. Reviewers value evidence of completed experimental work. Authors should obtain any necessary company and governmental clearance prior to submission of digests. Once Accepted, a detailed letter will be sent to all accepted submissions. The deadline for digest submissions is August 15, 2025, while final manuscripts and author registrations are due December 8, 2025.

IEDM 2025 Paper Submission Deadline in July

Learn more:
ieee-iedm.org

Event News
2025-05-19

The 71st annual IEEE International Electron Devices Meeting (IEDM) is scheduled for December 6 - 10, 2025 in San Francisco, with on-demand access to recorded content after the event. Paper submission deadline is July 10, 2025. Authors are asked to submit four-page papers electronically in IEEE Xplore-compatible PDF format and the accepted papers will be published as-is in the proceedings. Late-news papers covering the most recent, most noteworthy developments also will be accepted, with a submission deadline of August 18, 2025. IEDM 2025 will feature special Focus Sessions on "Efficient AI solutions", "Beyond Silicon: The Invisible Revolution in Thin-Film Transistors", "From P-bits to Qubits" and "Silicon Photonics for Energy Efficient AI Computing". Papers written by students as the lead author based on their own work will be considered for the Best Student Paper Award. Papers must be identified as student papers at time of submission, and the presentation must be given by the student to be eligible. The award is chosen based on both paper and presentation, and winner is announced and presented after IEDM.

CIPS 2026: Call for Papers

Learn more:
cips.eu

Event News
2025-05-19

CIPS, the "International Conference on Integrated Power Electronics Systems" will take place March 10-12, 2026 in Dresden/Germany, and the organizers describe the basic framework as follows: In the next decades, power electronic system development will be driven by energy saving systems, intelligent energy management, power quality, system miniaturisation and high reliability. Monolithic and hybrid system integration will comprise advanced device concepts including wide bandgap devices, new packaging technologies and the overall integration of actuators/drives (mechatronic integration). Consequently, CIPS is focused on the three main aspects: Assembly and interconnect technology for power electronic devices and converters. The second aspect is the integration of hybrid systems and mechatronic systems with high power density, and the third aspect is the systems' and components' operational behaviour, reliability and availability. Basic technologies for integrated power electronic systems as well as upcoming important applications will be presented in interdisciplinary invited papers. Experts from industry, research institutes and universities wishing to present results of their recent research are cordially invited to submit a paper by September 29, 2025. Applications are wide spread over areas such as power supplies and drives to feed all kinds of loads like consumer electronics, industrial equipment, data centres etc. Applications are e. g. from the grid or to feed electrical energy from solar or wind generators to the grid but also in the transportation sector like railway, automotive and aircraft. The organizers explicitly encourage to "submit your contribution even if you can not find the appropriate topic for your contribution. All interesting contributions are welcome!"

Technology Center in the "Indian Silicon Valley"

Learn more:
harting.com

Industry News
2025-05-16

Following the establishment of a sales office in Chennai in 2005 and the opening of a production plant in 2022, Harting has now inaugurated a technology center focusing on research and development in India. The aim is to meet the demand for advanced connector solutions in the region in a customer-oriented manner and to meet the growing requirements in the Asian market. Now, a 7,000 square metre technology center has been officially opened in Bangalore, popularly known as the "Silicon Valley of India". The goal: to offer talented individuals from the technology sector a platform to drive forward the development of connectivity solutions for various industries such as manufacturing, transport and telecommunications. Harting will also offer training and development opportunities to aspiring engineers and technology specialists. In addition to its headquarters in Chennai, Harting India has further sales offices in Bangalore, Pune and Noida.

Coupled Inductor for High-Performance Applications

Learn more:
we-online.com

Product Release
2025-05-15

Würth Elektronik introduces its WE-HCMD (High Current Multiphase Dual) high-current inductor, specially developed for use in TLVR (Trans-Inductor Voltage Regulator) topologies. This coil with MnZn core is characterized by its high permeability and very low RDC values allowing a high power density and efficiency. When designing power supplies for processors today, developers are confronted with increasingly high and significantly varying load transients – for example, in FPGAs used in AI applications. The innovation in TLVRs in this field calls for a new generation of components that achieve consistent efficiency even at high temperatures. The WE-HCMD family from Würth Elektronik offers coupled inductors with a coupling factor of up to 0.98 and an inductance range from 70 nH to 200 nH. The saturation current goes up to 190 A at a rated current of 78 A. The internal resistance is 0.125 mΩ. The inductor is designed for operating temperatures up to 125 °C. The family of SMT-mountable high-current inductors for TLVR applications includes four versions in a 0910 package and six in a 1111 package.

Early Bird Registration for ECCE Europe 2025 is Now Open

Learn more:
ecce-europe.org

Event News
2025-05-15

Early Bird Registration for ECCE Europe 2025, being held in Birmingham/UK from August 31 to September 4, is now open. If you're working in power electronics or energy conversion, this is your chance to connect with industry experts, researchers, and thought leaders shaping the field. Learn from renowned experts through keynote addresses, insightful tutorials, and engaging special sessions, while networking and building valuable connections with colleagues from around the world.

Wide Bandgap Power-electronic devices – From characterization to EMC testing

Learn more:
datatec.eu

Event News
2025-05-15

Rohde & Schwarz and dataTec invite you to xperience live demonstrations of how to analyze wide bandgap semiconductors using an oscilloscope and gain valuable insights into selecting the right oscilloscopes and probes. They will also demonstrate how EMC measurements and debugging can be efficiently performed with the oscilloscope, spectrum analyzer, and SCN. This seminar in Reutlingen/Germany on July 1st is aimed at users working with wide-bandgap semiconductors who are planning to purchase an oscilloscope and want to deepen their practical knowledge.

GaN Half-Bridge Drivers

Learn more:
st.com

Product Release
2025-05-14

STMicroelectronics' high-voltage half-bridge gate drivers for GaN applications dubbed STDRIVEG610 and STDRIVEG611 give designers two options to manage GaN devices in power conversion and motion applications for greater efficiency, power density and ruggedness in consumer and industrial applications. The STDRIVEG610 addresses applications requiring a fast 300 ns start-up time which is an important parameter for converter topologies like LLC or ACF ensuring accurate controlled turn-off intervals in burst mode. The STDRIVEG611 is tailored for hard switching in motion-control applications with additional protection features like high-side UVLO and smart shut down overcurrent protection. Both devices are suitable for hard-switching and soft-switching topologies with built-in interlocking to prevent cross conduction. The STDRIVEG610 elevates the performance of power adapters, chargers, and power-factor correction (PFC) circuits. The STDRIVEG611 saves space as well as boosting efficiency and reliability in drives for home appliances, pumps and compressors, industrial servo drives, and factory automation. Both devices integrate a high-side bootstrap diode as well as 6 V high-side and low-side linear regulators with a propagation delay matched to within 10 ns. Each driver has a separate sink and source path, with 2.4 A / 1.2 Ω sink and 1.0 A / 3.7 Ω source parameters. The integrated UVLO protection safeguards both the lower and upper 600 V GaN power switches.

Series of Gate Drive Transformers

Learn more:
itg-electronics.com

Product Release
2025-05-14

ITG Electronics has introduced a series of gate drive transformers comprising a range of products for various needs. The company's T201213 Series of Gate Drive Transformers spans lower-current items for general applications – such as a 200 V direct current version – to products offering up to 450 V_DC for higher-voltage applications. Gate drive transformers are specialized pulse transformers used to deliver high-power, fast-switching signals to the gates of power translators like IGBTs and MOSFETs, while also providing galvanic isolation. Essentially acting as barriers between power translators and controlling drive circuits, gate drive transformers are essential to applications such as power converters and motor drives for efficient and consistent switching. The T201213 Series activates or deactivates switching devices, and provides floating supply and level shifting for switching signals. The series is designed for frequencies from 20 – 300 kHz, and each gate drive transformer in the portfolio meets medical safety isolation requirements.

EMC Components: Multilayer Chip Beads for 8 A

Learn more:
tdk.com

Product Release
2025-05-13

TDK Corporation has expanded its MPZ1608-PH series of large-current multilayer chip beads for automotive and commercial power supply lines (1.6 x 0.8 x 0.6 mm³ – L x W x H). These 1608-size chip beads for power supply lines achieve a rated current of 8 A. Chip beads are used as noise suppression components in power and signal circuits. In a circuit with a current of 8 A or more, usually two or more chip beads must be used in parallel. This has the disadvantage that the current is not evenly distributed between the ferrite beads. The MPZ1608-PH series of products halves the component footprint in comparison with circuits using two conventional 1608-sized chip beads. Moreover, the components with a specified operating temperature of up to +125 °C are designed to be used in high-temperature environments like automotive and industrial equipment applications.

Semiconductor Partnership with Indian Government

Learn more:
renesas.com

Industry News
2025-05-13

Renesas has started a partnership with the Ministry of Electronics & Information Technology (MeitY), Government of India, to support local startups and academic institutions in the field of VLSI and embedded semiconductor systems. Renesas also celebrated the expansion of its offices in Bengaluru and Noida to accommodate its growing R&D teams, with inauguration ceremonies held in May 2025. India is a key market for Renesas, offering significant growth potential and access to a highly skilled talent pool. Renesas intends to generate over 10 percent of its global revenue from the Indian market by 2030. Recent collaborations include the OSAT factory project with CG Power and Stars Microelectronics in Gujarat and the MOU with IIT Hyderabad. Renesas is also expanding its operations in India, with plans to increase its headcount to 1,000 by the end of 2025.

SMD Fuse with 1500 A Interrupting Rating

Learn more:
littelfuse.com

Product Release
2025-05-13

Littelfuse launched the Nano²^® 415 SMD Series Fuse, the first surface-mount fuse from Littelfuse with a 1500 A interrupting rating at 277 V. Designed to provide true buffering for 250 V applications with unpredictable voltage fluctuations, the 415 Series offers fault current protection in a compact SMD package, making it ideal for space-constrained applications. The Nano² 415 SMD Series is well-suited for a range of applications, including consumer electronics like power adapters, chargers, and power supplies, industrial systems like inverters, converters, and instrumentation, automotive like EV charging stations, home chargers, and lighting, appliances/white goods like washers, dryers, and refrigerators as well as home automation like automated garage doors and smart home systems.

Multiphase Power Controller

Learn more:
aosmd.com

Product Release
2025-05-13

Alpha and Omega Semiconductor (AOS) announced its AOZ98252QI 2-output, 8-phase controller with 2.5 mA quiescent power. Featuring AMD SVI3 high-speed and SMBus digital interfaces, the AOZ98252QI is engineered as a key component in a complete system power solution with AOS' DrMOS products for graphics and desktop systems. The AOZ98252QI digital controller provides two output rails in flexible 8+0 to 4+4 GFX/SOC and Vcore/SOC output rails. Using the A²TM (Advanced Transient Modulator) feature, designers can achieve fast response times and adequate current balance for transient and DC loads. The device is shipped in a QFN 6x6-52L package.

Collaboration to support Battery Energy Storage System Platform

Learn more:
arrow.com

Industry News
2025-05-13

Arrow Electronics, in collaboration with Prime Batteries and NXP Semiconductors, is launching a next-generation Battery Energy Storage System (BESS) platform. Prime Batteries developed this solution with support from Arrow and NXP to advance energy industry and energy-saving technologies, addressing the increasing global demand for greater efficiency. By leveraging their combined strengths, the companies aim to establish new benchmarks in energy-saving technology and make a substantial impact across industries. According to Arrow the solution complies with the latest European safety regulations and "achieves unprecedented levels of energy storage capacity, making it ideal for a variety of BESS applications". The platform's versatility allows it to cater to different customer needs, with adjustable voltage and current parameters. It supports high voltages up to 1500 V, in-line with current market trends for high-power equipment, and meets rigorous safety standards for critical applications, including ISO 26262, with the potential for ASIL D certification, if necessary. The system features multiple protection layers and continuous, independent cell monitoring. Designed with scalability and upgradability in mind, the BESS can meet the changing requirements of customers. Its low maintenance needs and optimized operating conditions extend its lifespan, thereby reducing the total cost of ownership. In this context NXP's 1500 V Battery Energy Storage System provides a modular and scalable reference design for utility, commercial, industrial and residential high-voltage applications.

Collaboration on Power Conversion Systems for Electric Vehicles

Learn more:
visteon.com

Industry News
2025-05-09

Infineon Technologies and Visteon announced the companies have signed a Memorandum of Understanding (MOU) to advance the development of next-generation electric vehicle powertrains. In this joint effort, Infineon and Visteon will collaborate and integrate power conversion devices based on Infineon semiconductors, with particular emphasis on wideband gap device technologies, which provide significant advantages in power conversion applications compared to silicon-based semiconductors. These devices include greater power density, efficiency and thermal performance, which contribute to improved efficiency and reduced system costs for next-generation power conversion modules for the automotive sector. Future Visteon EV powertrain applications incorporating Infineon CoolGaN™ (Gallium Nitride) and CoolSiC™ (Silicon Carbide) devices may include battery junction boxes, DC-DC converters and on-board chargers. The resulting powertrain systems will conform to the highest efficiency, robustness and reliability. "Working with Infineon allows us to integrate cutting-edge semiconductor technologies that are essential in improving power conversion efficiency and overall system capability of next generation electric vehicles," said Dr. Tao Wang, Head of the Electrification Product Line of Visteon Corporation. "This collaboration will advance technologies that accelerate the transition to a more sustainable and efficient mobility ecosystem."

German Government issues final Funding Approval for new Smart Power Fab in Dresden

Learn more:
infineon.com

Industry News
2025-05-08

Infineon Technologies has received final approval for the funding of its new plant in Dresden (Smart Power Fab) from the German Federal Ministry for Economic Affairs. Infineon is expanding the site in order to meet customer demand for example for renewable energies, efficient data centers and electromobility. Infineon will invest five billion euros of its own money, creating as many as 1,000 new jobs. This figure does not include additional jobs which will be generated in the investment's ecosystem: Experts expect a positive job effect of 1:6 (Source: ZVEI-Studie). In addition, Infineon is also investing in Dresden through its participation in the joint venture "European Semiconductor Manufacturing Company (ESMC) GmbH". Infineon's Smart Power Fab not only helps strengthen European supply chains in the microelectronics sector, it also further solidifies the position of Dresden and Silicon Saxony as Europe's largest semiconductor hub. The European Commission approved the funding by the German federal government. The Smart Power Fab is being supported by both the European Chips Act and the IPCEI ME/CT innovation program ("Important Project of Common European Interest on Microelectronics and Communication Technologies"). Overall funding for the site from these sources totals approximately one billion euros. Construction of the Smart Power Fab, currently one of Germany's largest building projects, is proceeding as planned, with the building shell currently nearing completion. Infineon held a topping-out ceremony together with all those involved in construction activities in early April this year. Production is to begin in 2026.

Test Generator for up to 2 kA

Learn more:
microtest.net

Product Release
2025-05-08

The Microtest Group introduced the M2 DS5 Quasar, "the smallest 2 kA low inductance dynamic switch test generator, for the test of all types of products on one platform". The tester is suited for high-volume semiconductor production. The M2 DS5 Quasar is designed to test power chips, and the latest WBG (Wide-bandgap) devices made from Silicon Carbide and Gallium Nitride, materials commonly found in consumer power supplies, electric vehicles including trains and battery electric hybrid, industrial motors, HVAC systems and many other applications in the green energy, automotive, power markets, as well as rad-hard (radiation-hardened) devices for space and defence. The tester was developed by the UK subsidiary ipTEST. It is eight times more efficient in overcurrent protection, with a typical response time of under 300 ns. The parasitic inductance has also been reduced by 85 % to 30 nH.

Gallium: From Mining towards the Fab

Learn more:
indium.com

Industry News
2025-05-07

Indium Corporation and Rio Tinto have successfully extracted gallium from feed sourced at Rio Tinto's Vaudreuil alumina refinery in Saguenay, Quebec/Canada. This collaboration is a step in building a more robust global supply chain for gallium. A strategic North American supply will accelerate the development of the project towards commercialization of gallium-based technologies. Indium Corporation designed and developed this gallium extraction process in the United States at its research and development facility in Rome, New York state. Indium Corporation works towards establishing a 3.5-ton demonstration plant which would be located in Saguenay, Quebec, which might then eventually complemented by a commercial-scale capacity of 40 tons annually, addressing an estimated five to 10 percent of global gallium supply.

"The world's lowest Temperature 65-70 W USB-C Modules for installed Applications"

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pulsiv.com

Product Release
2025-05-06

Pulsive released of a series of 65 W-70 W USB-C modules. Aimed at installed applications such as wall sockets, desks, and furniture, these fully assembled modules achieve "the world's lowest operating temperature of just 32 °C above ambient with an industry leading efficiency of 97.34 %". USB-C charging in wall sockets, desks, and furniture typically offer power levels of 15-30 W and often struggle to handle multiple devices and/or fast charging. Limitations on physical size and natural airflow cause higher power solutions at 45 W-65 W to reach temperature levels in excess of 80 °C above ambient causing the power supply to either reduce the power to 15 W, or in many cases, cut off altogether. Pulsiv's fully assembled USB-C modules have solved all the challenges relating to heat, size and safety, making it "the only suitable solution for installed applications". It combines Pulsiv OSMIUM optimized PFC technology with an industry standard QR flyback to safely deliver 65 W or 70 W (MacBook compatible). Available in a compact cube or flat module form factor, this GaN-optimised design can operate continuously for more than 8 hours at 100 % load and never exceed 32 °C above ambient. Furthermore, due to its switching method, there is zero inrush current – eliminating the problems caused by power outages where multiple USB-C wall sockets have been installed in a single location. The dimensions of the module, which is switched at 125 kHz, are 36 mm x 36 mm x 40 mm (cube) or 55 mm x 37 mm x 25 mm (flat).

1700 V Switcher IC for 800 V BEVs

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power.com

Product Release
2025-05-06

Power Integrations announced five new reference designs targeting 800 V automotive applications based on the company's 1700 V InnoSwitch™3-AQ flyback switcher ICs. Spanning power levels from 16 W to 120 W, the designs leverage both wound and low-profile planar transformers and target automotive applications such as DC/DC bus conversion, inverter emergency power, battery management and power supplies for auxiliary systems. The designs feature Power Integrations' wide-creepage InSOP™-28G package, which supports 1000 V_DC on the primary side while providing appropriate creepage and clearance between pins in pollution degree 2 environments. Power consumption is less than 15 mW at no-load. The ICs also incorporate synchronous rectification and a valley switching, discontinuous/continuous conduction mode (DCM/CCM) flyback controller capable of delivering greater than 91 % efficiency. The company provides three reference designs, which are all isolated flyback converters based on the 1700 V-rated CV/CC InnoSwitch3-AQ switcher ICs. The three reference designs kits (RDKs) and two design example reports (DERs) are RDK-994Q (35 W ultra-low-profile traction inverter gate-drive or emergency power supply with 40-1000 V_DC input and 24 V output), RDK-1039Q (18 W power supply with planar transformer for traction inverter gate driver or emergency power supply), RDK-1054Q (120 W power supply with planar transformer, designed to shrink or eliminate heavy, bulky 12 V batteries), DER-1030Q (20 W four-output power supply) and DER-1045Q (16 W four-output power supply).

GaN-based 2.5 kW Totem Pole PFC Case Study

Learn more:
camgandevices.com

Product Release
2025-05-06

Cambridge GaN Devices (CGD) announced that Inventchip has successfully demo'd a 2.5 kW GaN-based CCM totem-pole PFC reference design using CGD's ICeGaN® gallium nitride ICs. A key feature is ease-of use. ICeGaN ICs integrate interface circuitry and protection on the same GaN die as the HEMT. Therefore, any standard driver IC can be used. The Inventchip IVCC1104 totem pole PFC controller IC does not require any programming. It offers AC zero-crossing control and robustness against AC disturbance. Inventchip had an existing 2.5 kW TPPFC reference design based on its controller and gate drivers using SiC MOSFETs in TO-247 packages. To evaluate the performance of GaN instead, Inventchip designed a TO-247 adapter board using CGD's P2 25 mΩ ICeGaN ICs and the ICeGaN design works without any modification of their circuits. Soon, EV inverter drives of over 100 kW are expected to transition to GaN too.

1200 V SiC MOSFET with Top-Side Cooling and Isolated Thermal Path

Learn more:
semiq.com

Product Release
2025-05-06

SemiQ has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27 and 101 A and pulsed drain current from 70 to 350 A, with device resistances R_DS(on) ranging from 80 to 16 mΩ, respectively. All devices are operational to 175 °C and have been tested to voltages greater than 1400 V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800 mJ (R_DS(on) = 16 mΩ, 160 mJ for the 80 mΩ device). The devices can be used in parallel and implement top-side cooling as well as an isolated thermal path with a ceramic isolated back paddle. The package includes a driver source kelvin pin for gate driving as well as a gate pin, 5 source pins and a drain tab. The TSPAK MOSFETs offer a lower capacitance, reduced switching losses, longer clearance distance and higher overall system efficiency. SemiQ is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and on-board chargers, motor drives, high-voltage DC/DC converters and UPS/switch mode power supplies. All devices in the series are housed in a 18.6 x 14.0 x 3.5 mm³ TSPAK package, have a zero gate voltage drain current of 0.1 µA, a -10/10 nA gate-source leakage current and a 3.5 V gate threshold voltage (cited characteristics measured at 25 °C). The series' cycle times range from 49 ns (80 mΩ MOSFET) to 114 ns (16 mΩ), and the devices have total switching energy of between 153 µJ (80 mΩ MOSFET) and 1565 µJ (16 mΩ).

Enhanced Thermal Performance Package Technology

Learn more:
ween-semi.com

Product Release
2025-05-06

WeEn Semiconductors has introduced SiC MOSFETs and Schottky Barrier Diodes (SBDs) in thermally efficient TSPAK packages. These packages will enable engineers to improve efficiency, reduce form factors, extend reliability and lower EMI across a variety of high-power applications. Providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate, the company's top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16 % compared to conventional devices. As a result, the packages help to simplify thermal management design, lower losses and increase power density. EMI reduction derives from the fact that the circulating current that creates the magnetic field is no longer blocked by the thermal vias necessary in conventional bottom-side cooling designs and can return to the source directly, minimizing magnetic interference. WeEn's TSPAK SiC technologies are suited to on-board chargers and high-voltage-to-low-voltage DC/DC converters in electric vehicles, automotive HVAC compressors, vehicle charging stations, photovoltaic renewable energy systems and power supplies for computing and telecom servers. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance ratings from 20 to 150 mΩ. TSPAK SBDs are available with voltages from 650 V to 1200 V and current ratings of 10 A to 40 A.

40 V GaN Power Transistor targets Low-Voltage Silicon Strongholds

Learn more:
epc-co.com

Product Release
2025-05-06

Efficient Power Conversion (EPC) announces the availability of the EPC2366, a 40 V, 0.8 mΩ device designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC/DC converters and synchronous rectifiers. With an R_DS(on) x Q_G figure of merit (10 mΩ·nC), zero reverse recovery, and its thermal performance, the EPC2366 delivers higher efficiency, faster switching, and greater power density than a comparable silicon-based solution. The device is integrated in a 3.3 mm x 2.6 mm PQFN package. The EPC2366 enables higher frequency operation and reduced system size for high density 48 V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24 V battery powered motor drives.

Self-Biasing GaN Flyback Converter

Learn more:
ti.com

Product Release
2025-05-06

Texas Instruments now offers a 65 W dual-port USB PD charger with self-biasing GaN flyback: The UCG28826 is claimed to be "the industry's first self-biasing GaN flyback converter". Designed for next-generation fast-charging applications, the UCG28826 converter delivers 65 W across 90 V_AC to 264 V_AC in this reference design, enabling engineers to meet strict efficiency standards, minimize standby power consumption and increase power density.

SiC Superjunction Technology

Learn more:
infineon.com

Product Release
2025-05-06

Infineon Technologies has introduced a trench-based SiC superjunction (TSJ) technology concept. This expansion will encompass a diverse range of package types, including discretes, molded and frame-based modules, as well as bare dies – for a broad spectrum of applications, targeting both the automotive and industrial sectors. The first products based on the new technology will be 1200 V in Infineon ID-PAK for automotive traction inverters and combine the advantages of trench technology and superjunction design. This scalable package platform supports power levels of up to 800 kW, enabling system flexibility. Key benefits of the technology include increased power density, achieved through an up to 40 percent improvement in R_DS(on)* A, allowing for more compact designs within a given power class. Additionally, the 1200 V SiC trench-superjunction concept in ID-PAK enables up to 25 percent higher current capability in main inverters without compromising short-circuit capability. As an early customer, Hyundai Motor Company development teams will use the trench-superjunction technology in electrical vehicle drivetrains.

Power Switch Architecture for 10 MW and more

Learn more:
menlomicro.com

Product Release
2025-05-06

Menlo Microsystems has announced a scalable power switching architecture that enables its Ideal Switch® to be deployed in advanced power distribution and control systems to 10 MW and beyond. The demonstration system, which was shown at PCIM, is based on the MM9200, a 300 V, 10 A MEMS switch. It utilizes Menlo's Ideal Switch technology to provide an ultra-low on-resistance, metal-on-metal contact to eliminate wasted power. The MM9200 is a high-power SPST micro-electromechanical relay that is smaller, more efficient and has higher performance than equivalent solid-state relay (SSR) and electro-mechanical relay (EMR) alternatives. Arrays of MM9200 switches are configured for microsecond speed protection in 1000 V / 125 A modules. Four modules are combined into hot-swapable systems, and multiple systems are deployed in parallel to scale to accommodate higher power requirements. Unlike other solutions, the negligible power dissipation of the Ideal Switch removes the need for design compromises to accommodate heat management while simultaneously enabling power management and control systems to be constructed in a fraction of the space.

General-Purpose Power Supplies Series

Learn more:
lambda.tdk.com

Product Release
2025-05-06

TDK has introduced the TDK-Lambda brand GUS350 series of compact, single output general-purpose power supplies. The models are rated at 350 W with 12, 24, 36 and 48 V outputs. The GUS350 is convection-cooled and is available with output voltage adjustment function, remote on-off, and DIN-rail mounting bracket options. The GUS350 series provides an alternative source of power for manufacturers who require a higher grade of construction. The GUS350 models measure 101.6 x 41 x 127 mm³ (W x H x D) and have an operating temperature from -20 to +70 °C, with a three-year warranty. Efficiencies are up to 95.5%. Safety certifications include IEC/EN/UL/CSA62368-1 (compliant to IEC61010-1) as well as CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN 55011-B and EN 55032-B conducted and radiated emissions standards and meet EN 61000-3-2 harmonics and IEC 61000-4 immunity standards. The GUS350 series meets IEC 62477-1 (OVC III) and has input-to-output isolation of 2,000 V_DC, input-to-ground 3,000 V_DC, and output-to-ground 500 V_DC. Main applications are light industrial, automation, ATE test systems, LED lighting and broadcast.

Joint Development of Traction SiC Inverters for E-Mobility

Learn more:
cissoid.com

Industry News
2025-05-06

Cissoid and EDAG Group have started a strategic partnership aimed at accelerating the development of next-generation Silicon Carbide traction inverters for electric mobility applications. This collaboration brings together Cissoid's expertise in SiC power semiconductor modules and control solutions with EDAG's engineering know-how in the design, integration, and validation of electric powertrains. By combining their complementary strengths, the two companies aim to offer e-mobility OEMs and equipment suppliers "unmatched technical support and complete solutions for the efficient, reliable, and functionally safe development of SiC-based traction inverters". Special emphasis will be set to "comprehensive engineering services covering inverter system design, thermal management, mechanical integration, functional safety and EMC compliance" in order to enable "accelerated time-to-market through access to ready-to-implement, proven hardware and software solutions". All this is planned to be with "end-to-end technical support, from concept design to prototyping and vehicle integration".

Inverter Control Modules achieve ISO26262 ASIL-C Ready Certification

Learn more:
cissoid.com

Product Release
2025-05-05

Cissoid announced that its CxT-ICM3S series of Inverter Control Modules (ICMs) have been successfully certified by SGS-TÜV Saar for functional safety, achieving ISO26262 ASIL-C Ready status. This certification underscores Cissoid's commitment to delivering unique, functionally safe and highly customizable solutions that bridge the gap between discrete hardware components and off-the-shelf inverters, enabling optimized power electronics design for electric vehicles and industrial applications. These ICMs are pre-qualified, functionally safe solution that combines the efficiency of off-the-shelf systems with the customizability of discrete hardware components. This best-of-both-worlds approach enables manufacturers to tailor their inverter designs to specific voltage, power, and motor control requirements - accelerating development while ensuring safety and performance. They offer hardware and software flexibility to adapt to specific motor, voltage, and power requirements. For example, the CXT-ICM3SA Series of 3-Phase SiC ICMs provides field-proven inverter control technology with customizable hardware interfaces allowing developers to fine-tune their inverters to maximize efficiency and reliability while ensuring compliance with strict safety standards.

JFET Technology for smarter and faster Solid-State Power Distribution

Learn more:
infineon.com

Product Release
2025-05-05

To enable the next generation of solid-state power distribution systems, Infineon introduced its CoolSiC™ JFET product family. These devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them well-suited for solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and overvoltage control, CoolSiC JFETs can be used in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches. The first generation of CoolSiC JFETs features an R_DS(ON) starting at 1.5 mΩ (750 V _BDss) and 2.3 mΩ (1200 V _BDss), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions. Housed in a Q-DPAK top-side cooled package, the devices support paralleling and scalable current handling, enabling high-power systems with several layout and integration options. Their predictable switching behavior under thermal stress, overload and fault conditions increases long-term reliability in continuous operation. To meet the thermal and mechanical challenges of harsh application environments, CoolSiC JFETs leverage Infineon's.XT interconnection technology with diffusion soldering. This improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems. Tested and qualified under real-world operating conditions of solid-state power switches and based on the industry-standard Q-DPAK package, the devices enable quick and seamless design integration in both industrial and automotive applications.

Automotive-qualified 1200 V SiC MOSFETs in D²PAK-7 Packaging

Learn more:
nexperia.com

Product Release
2025-05-05

Nexperia announced a range of efficient and robust automotive-qualified silicon carbide MOSFETs with R_DS(on) values of 30, 40 and 60 mΩ. These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q) were previously offered in industrial grade and have now been awarded AEC-Q101 certification. This makes them suitable for automotive applications like onboard chargers (OBC) and traction inverters in electric vehicles (EV) as well as for DC/DC converters, heating ventilation and air-conditioning systems (HVAC). These switches are housed in the increasingly popular surface mounted D²PAK-7 package, which is more suitable for automated assembly operations than through-hole devices. Concentrating on the nominal R_DS(on) value neglects the fact that it can increase by more than 100 % as device operating temperatures rise, resulting in considerable rise of conduction losses. The temperature stability is even more critical when SMD package technologies are used compared to through-hole technology since devices are cooled through the PCB. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and focused the temperature stability of its SiC MOSFETs, with the nominal value of R_DS(on) increasing by 38 % over an operating temperature range from 25 °C to 175 °C. This feature enables engineers to address higher output power in their applications achieved with a higher nominal 25 °C rated R_DS(on) without sacrificing performance. Nexperia is planning to release automotive-qualified versions of its 17 mΩ and 80 mΩ R_DS(on) SiC MOSFETs in 2025.

Proof of Concept for integrating Current Sensor into Power Module

Learn more:
akm.com

Industry News
2025-05-02

Asahi Kasei Microdevices (AKM) and Silicon Austria Labs (SAL) have successfully completed a joint proof of concept for integrating a current sensor into a power module to be used in automotive applications such as traction inverters and DC/DC converters. This technology enables energy efficiency, as well as compact and lightweight design for ultra-high current applications using next-generation SiC power devices. AKM is developing the EZ232L, a linear Hall IC for coreless current sensors. With its resolution and accuracy, this technology is said to enhance the efficiency of traction inverters that require operation over a wide current range. AKM collaborated with the Austrian research center SAL to conduct a joint technical verification, using EZ232L to develop a power module that integrates a current sensor in order to address the limitations of conventional magnetic core-based current sensing.

AC/DC Power Supplies delivering 20 W

Learn more:
recom-power.com

Product Release
2025-05-01

In new energy applications, AC/DC power supplies increasingly must operate over nominal supply values from 100 V_AC to 277 V_AC. The recently launched RAC20NE-K/277 from Recom matches this with 20 W available at optional 12, 24, or 36 V_DC outputs. Encapsulated versions are available with constant voltage or constant current limiting characteristics and a constant voltage open frame type with 12 or 24 V_DC output. The RAC20NE-K/277 series allows reliable operation at full load to 60 °C ambient, and to 85 °C with derating. The parts are Class II insulated, OVC III rated to 3000 m altitude (OVC II/5000m) and meet EN 55032 'Class B' EMC requirements with a floating or grounded output. Standby and no-load power dissipation meet Eco-design requirements. The RAC20NE-K/277 board-mount, encapsulated parts are sized 52.5 mm x 27.6 mm x 23.0 mm while the open frame parts with Molex connections measure 80.0 mm x 23.8 mm x 22.5 mm.

Family of Current Sensors

Learn more:
lem.com

Product Release
2025-04-30

LEM adds two members to its IN family of current sensors, suitable for a range of demanding systems. The IN 1500-S current sensor is specifically designed for high performance and precision in 1500 A nominal current applications, while the IN 1000-SHF current sensor is suitable for applications requiring very wide bandwidth. The devices are intended for applications such as MRI, calibration units, power meters, and energy measurement. With IN 1500-S, the IN family for current sensing now boasts eight devices, and it is LEM's most advanced high-precision range of current sensors yet, underpinned by LEM's closed-loop current transducers that use a highly-accurate zero-flux detectors based on LEM's fluxgate technology. The current sensors achieve ultra-high precision current measurements for DC, AC and pulsed currents. Using fluxgate technology in transducers for precise current measurement is not new; however, it has limitations linked to a ripple that stems from the excitation voltage. LEM takes fluxgate current transducers to "previously unachieved performance levels" through digital technology, gaining not only a major reduction of the ripple from the fluxgate driving signal but significantly improving the device's immunity to temperature effects, interference and supply voltage variation. In addition, LEM has used FPGAs for faster start-up of these UL/UR certified devices. The IN 1500-S device provides a linearity up to ±0.0002 % within a frequency bandwidth up to 2 MHz @ ±3dB while operating at temperatures between -40 °C and +85 °C at a stability up to 0.1 ppm/month.

Thermoset Laminates for Automotive Radar Sensor Applications

Learn more:
rogerscorp.com

Product Release
2025-04-27

Rogers announced its latest innovation in dielectric materials: RO4830™Plus Circuit Materials, which are well suited for cost-sensitive millimeter wave PCB applications, such as 76-81 GHz automotive corner radar sensors. RO4830 Plus woven glass free, thermoset laminates possess the stable dielectric constant and low insertion loss required by RF designers for millimeter wave automotive radar sensors. The design dielectric constant of RO4830Plus laminates is approximately 3.03 at 77GHz (microstrip differential phase length method). The combination of Rogers' low loss thermoset resin and very low profile electrodeposited copper foil translates to a very low insertion loss of 1.5 dB/inch for 5mil laminates, as measured by the microstrip differential phase length method. RO4830™ Plus laminates are engineered for the cap layer on FR-4 multi-layer board designs, which are commonly used for 76- 81 GHz automotive radar sensor PCB applications. These thermoset laminates are free of woven glass, contributing to good laser drilling performance, and CAF resistance. RO4830 Plus laminates can be fabricated using standard epoxy/glass (FR-4) processes and are compatible with RO4400™ bond ply. These PFAS-free laminates have the UL-V0 flame retardant rating and are lead free solder process compatible.

High-Voltage Resonant Inductors and Power Conversion Solutions at PCIM 2025

Learn more:
itg-electronics.com

Industry News
2025-04-25

ITG Electronics will showcase its latest power conversion solutions at the at PCIM 2025 in Nuremberg, Germany, May 6 – 8, 2025. Attendees can explore ITG's newly released High-Voltage Resonant Inductors, along with a wide range of advanced power conversion solutions. Among other solutions, at PCIM 2025 ITG Electronics will also highlight its Mid-Tier PFC Chokes, offering cost-effective, high-performance power factor correction solutions. The company will showcase its LLC Transformers, designed for high-efficiency resonant power topologies, along with Power Block Converters, which provide robust power distribution capabilities. Additionally, ITG will feature its Quarter Brick 48V Down Converters, engineered for reliable and compact voltage regulation. At the forefront of ITG's exhibition will be its RL111008A and RL111010A series of high-voltage resonant inductors. Designed for industrial applications, these inductors feature industry-leading 5% tolerance control, ensuring accurate resonant frequency for LLC power conversion. ITG's RL111008A series offers an inductance range from 3-65uH and handles 64 Amps at 3uH, while the RL111010A series ranges from 16-200uH, supporting 32 Amps at 16uH. Both series are engineered for high-voltage, high-current applications with low AC losses. Rated for voltages from 600Vac to 1000VDC, they feature a dielectric strength of 4500VDC, ensuring robust performance in demanding industrial environments. Join ITG Electronics at PCIM 2025 (Booth 4-117, Hall 4) to see these innovations firsthand and discuss how ITG's power solutions can optimize your systems.

1200 V SiC MOSFETs Six-Pack Modules

Learn more:
semiq.com

Product Release
2025-04-24

SemiQ has announced a series of 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable more compact system-level designs at large scale. The high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and a body diode. These are arranged in a three-phase bridge topology, with the modules additionally featuring split DC negative terminals, press-fit terminal connections and a Kelvin reference for stable operation. All parts have been tested beyond 1350 V, with 100 % wafer-level burn in (WLBI). They have been developed for applications including AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging, induction heating and welding, renewable energy supplies and UPS. The modules are operational to 175 °C junction temperature, and have been designed for easy mounting, including direct mounting to a heatsink. The product family has been launched with 20, 40 and 80 mΩ variants (GCMX020A120B2T1P, GCMX040A120B2T1P and GCMX080A120B2T1P) that have a power dissipation of 263, 160 and 103 W respectively. They conduct a continuous drain current of 29 – 30 A and a pulsed drain current of 70 A. Additionally, they have turn-on switching energy of 0.1- 0.54 mJ and a turn-off switching energy of 0.02 - 0.11 mJ with a switching time of 56 - 105 ns. Including heatsink mountings the module measures 62.8 x 33.8 x 15 mm³.

High Power Density SiC Power Modules

Learn more:
rohm.com

Product Release
2025-04-24

ROHM has developed the 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs. The lineup includes six models rated at 750 V (BSTxxx1P4K01) and seven products rated at 1200 V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications. The HSDIP20 features an insulating substrate with appropriate heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM's 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38 °C cooler (at 25 W operation). This heat dissipation performance supports high currents even in a compact package. Therefore, ROHM claims to achieve "industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules". As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations. In industrial equipment the devices are suited for e. g. EV charging stations, V2X systems, AC servos, server power supplies, PV inverters or power conditioners.

Super Junction MOSFETs for AI Server and Telecoms Power

Learn more:
ween-semi.com

Product Release
2025-04-23

WeEn Semiconductors highlights the company's latest 600 V super junction MOSFET for computing and telecoms server applications. The WSJ2M60R065DTL has been specifically developed to address the demands of artificial intelligence (AI) and other high-performance processing applications by enabling improved efficiency, smaller form factors and easier thermal management. Based on the company's latest generation super junction technology, the WeEn WSJ2M60R065DTL super junction MOSFET is said to combine an "industry-leading on resistance (R_DS(ON)) and figure of merit (R_DS(ON)*Q_g) with an ultra-compact TOLL package". The WSJ2M60R065DTL is rated for 50 A, features a maximum R_DS(ON) of 65 mΩ and has a typical blocking voltage of around 700 V. An integrated and fine-tuned forward recovery diode (FRD) takes care of reverse recovery robustness and balanced high-temperature performance. The body diode can withstand a commutation speed of 1000 A/µs without damage, making the WSJ2M60R065DTL particularly suitable for Zero Voltage Switching (ZVS) applications in soft-switching topologies where it can deliver high efficiency while handling irregular operating conditions. At the same time, stable resistance performance delivers a steady and predictable R_DS(ON) across a range of current and temperature conditions.

Laser Drivers using Automotive-Qualified GaN FETs

Learn more:
epc-co.com

Product Release
2025-04-23

Efficient Power Conversion (EPC) introduces the EPC91116, a high-speed, high-current laser driver evaluation board tailored for indirect time-of-flight (iToF) applications in automotive and industrial sensing. Built around the AEC-Q101 qualified EPC2203 eGaN® FET, the EPC91116 delivers nanosecond-scale performance with a flexible, low-cost architecture that simplifies prototyping and accelerates time to market. As iToF systems become critical for automotive driver monitoring, in-cabin sensing, and 3D mapping, designers need tools that are ready for qualification and production. The EPC91116 answers this need with support for peak currents above 10 A, pulse widths as narrow as 5 ns, and switching speeds up to 100 MHz. These automotive-qualified components utilize the EPC2203, an 80 V, 17 A (pulsed), 0.9 mm × 0.9 mm GaN FET with 670 pC total gate charge and only 80 mΩ R_DS(on), and the AEC-Q100-qualified 74LVC2T45GS logic-level translator. The simplified gate drive eliminates the need for specialized gate drivers by using a low-cost CMOS logic IC to reliably drive GaN at up to 100 MHz. The input logic is compatible with logic levels from 1.2 V to 5.5 V with simple modification. This development platform is suited for engineers looking to implement automotive-grade iToF designs or explore other fast-switching power topologies such as Class-E amplifiers, SEPIC converters, or other lidar systems.

1200 V and 1600 V Rectifiers meet Automotive-Quality Standards

Learn more:
taiwansemi.com

Product Release
2025-04-22

Taiwan Semiconductor introduces two series of high-voltage rectifiers manufactured to AEC-Q101 standards and offered in automotive and commercial grade versions. The fast-recovery HS1Q Series (1,200 V, 1 A, high-efficiency) and the standard-recovery SxY Series (2 A, 1,600 V and 1 A, 1,600 V) rectifiers operate at a maximum junction temperature of 175 °C. They are integrated in a DO-214AC (SMA) package, which is RoHS compliant and halogen-free. Production Part Approval Process (PPAP) documentation is available. The components are suited for bootstrap, freewheeling and desaturation applications for IGBT, MOSFET and WBG gate drivers used in electric vehicles and high-voltage battery systems. Other applications include alternative energy systems; grid-tied and smart grid systems, medical, industrial, UPS systems and plasma generators, smart electric metering and others.

Call for Nominations for 2026 Global Energy Efficiency Award

Learn more:
psma.com

Event News
2025-04-22

Recognizing that energy efficiency is critical for addressing climate change and sustainability, PSMA now calls for nominations for its 2026 Global Energy Efficiency award. Nominations must be submitted by September 2, 2025. To submit a nomination, go to the 2026 Global Energy Efficiency Award web page. There is no cost for submissions, and nominees need not be PSMA members. Finalists will be announced on October 1, 2025. The 2026 winner will be awarded at next year's APEC 2026, which will be held in San Antonio, Texas. PSMA established its annual Global Energy Efficiency Award in April 2024 to honor breakthrough innovations that drive substantial energy savings across industries and applications. Nominees can be any company or organization worldwide that designs or manufactures electric-powered systems. The focus of the award criteria is on energy efficiency (rather than renewables or electrification), appliances and equipment (rather than building codes) and/or high global impact. PSMA is a non-profit professional organization with the two-fold objective of enhancing the stature and reputation of its members and their products and improving their technological power sources knowledge. Its aim is to educate the electronics industry, academia, government and industry communities as to the applications and importance of all types of power sources and conversion devices.

International Workshop on Power Supply on Chip (PwrSoC 2025)

Learn more:
pwrsocevents.com

Event News
2025-04-19

The 9th International Workshop on Power Supply on Chip (PwrSoC 2025) will take place from September 24 to 26, 2025, at Seoul National University in Seoul, Korea, with Professor Jaeha Kim serving as the General Chair and Local Host. The PwrSoC Workshop is a leading international event focused on power supply integration technologies, specifically Power Supply on Chip and Power Supply in Package. Co-sponsored by IEEE and the Power Sources Manufacturers Association (PSMA), the workshop is held biennially at various locations worldwide, bringing together researchers and engineers from academia and industry to share the latest trends and discuss future directions. The technical program will follow a single-track format, featuring presentations from leading experts in power supply integration. Participants will also have the exclusive opportunity to visit SK Hynix's advanced semiconductor fabrication facility, gaining insights into one of the world's top memory manufacturers and its cutting-edge technologies.

EMC Shielding Tents

Learn more:
langer-emv.de

Product Release
2025-04-17

The shielding tents from Langer EMV-Technik have been specially developed for EMC measurements during development. They provide effective shielding against electromagnetic interference and enable precise measurements directly in the development environment – whether for reducing interference coupling in sensitive test set-ups or for the targeted injection of interference signals. For example, the Z23-1 set is a shielding tent which is suited for EMC measurements on small assemblies. It offers reliable shielding attenuation of 45 - 50 dB (30 MHz - 1 GHz) with dimensions of 900 × 500 × 400 mm³. When more space is needed, the Z23-2 set, measuring 900 × 500 × 650 mm³, comes into consideration. It provides the same effective shielding attenuation as the Z23-1 set, but is higher and therefore more flexible to use.

Radiation-hardened Power MOSFET Family

Learn more:
microchip.com

Product Release
2025-04-17

The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications. Microchip Technology now announced the completion of its family of radiation-hardened (rad-hard) power MOSFETs to the MIL-PRF-19500/746 slash-sheet specification and the achievement of JANSF qualification for its JANSF2N8587U3, 100V N-channel MOSFET to 300 Krad (Si) Total Ionizing Dose (TID). Microchip's JANS series of rad-hard power devices is available in voltage ranges from 100 – 250 V to 100 Krad (Si) TID, with the family expanding to higher Radiation Hardness Assurance (RHA) levels, starting with the JANSF2N7587U3 at 300 Krad (Si) TID. The JANS RH MOSFET die is available in multiple package options including a plastic package using the MIL-qualified JANSR die, providing a power device for New Space and Low Earth Orbit (LEO) applications. The ceramic package is hermetically sealed and developed for total dose and Single-Event-Environments (SEE). The devices are designed to meet the MIL-PRF19500/746 standard with enhanced performance.

Compact Coil-integrated Step-Down DC/DC Converter can replace LDOs

Learn more:
torexsemi.com

Product Release
2025-04-17

Torex Semiconductor has developed the XCL247/XCL248 Series, compact general-purpose "micro DC/DC" converters with integrated inductors and high-voltage capabilities. Designed for space-saving and high-efficiency under light loads, these converters are suited for several applications, including industrial and consumer use. The XCL247/XCL248's most notable feature is its voltage capability of 36 V in relation to its space requirements. Additionally, with a quiescent current of 11 µA, the series delivers its efficiency across load conditions-86 % at V_IN = 12 V, V_OUT = 5 V, I_OUT = 1 mA, and 88 % at I_OUT = 300 mA. The device can replace traditional, larger high-voltage LDO regulators. The XCL247/XCL248 supports input voltages up to 36 V, compatible with 12 V and 24 V power supplies while providing an output current of 600 mA across a -40 °C to 105 °C temperature range. Its coil-integrated design minimizes PCB wiring patterns, reducing noise radiation from current loops. Additionally, the integrated coil eliminates the need for external coil selection. This series adopts P-channel driver FETs. This allows for 100% duty operation, enabling direct pass-through of the input voltage when it falls below the output voltage setting.

IGBT and RC-IGBT Devices for EVs

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infineon.com

Product Release
2025-04-16

Infineon Technologies has launched a generation of high-voltage automotive IGBT chips. Among these offerings are the EDT3 (Electric Drive Train, 3 rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance of electric drivetrain systems, making them particularly suitable for automotive applications. The EDT3 and RC-IGBT bare dies have been engineered to create custom power modules. The generation EDT3 achieve up to 20 percent lower total losses over the EDT2 at high loads while maintaining efficiency at low loads. The EDT3 chipsets, which are available in 750 V and 1200 V classes, are well-suited for main inverter applications in a diverse range of electric vehicles. Its maximum virtual junction temperature is specified with 185 °C. Infineon's latest EDT3 IGBT chip technology is now integrated into the HybridPACK™ Drive G2 automotive power module, offering a power range of up to 250 kW within the 750 V and 1200 V classes. All chip devices are offered with customized chip layouts, including on-chip temperature and current sensors. Additionally, metallization options for sintering, soldering and bonding are available on request.

Enhancing High-Performance Electric Motors

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cissoid.com

Industry News
2025-04-15

Hyperdrives has chosen CISSOID's SiC Inverter Control Modules (ICMs) to power its hollow conductor cooled electric motors. This collaboration aims to set new standards in power density, efficiency, and performance within the electric vehicle industry and beyond. Hyperdrives' approach utilizes a direct cooling system that dissipates heat at its source by channelling cooling fluid through hollow conductor windings. This design enhances heat dissipation by a factor of ten, allowing for continuous currents three times higher than traditional systems and resulting in motors that are twice as power-dense. The company's automotive flagship product, Hyperdrives One is said to reduce material costs by up to 40 %. To complement this motor design, Hyperdrives has integrated CISSOID's 3-Phase 1200 V / 550 A SiC Inverter Control Module.

Automotive Qualification for GaN Products

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navitassemi.com

Industry News
2025-04-15

Navitas Semiconductor has announced its high-power GaNSafe™ ICs achieve automotive qualification for both AEC-Q100 and AEC-Q101, showcasing GaN's next inflection into the automotive market. This 4th generation family integrates control, drive, sensing, and critical protection features that enable reliability and robustness in high-power applications. It is claimed to be "the world's safest GaN with short-circuit protection (350 ns max latency), 2 kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control". All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no V_CC pin. The Automotive Electronics Council (AEC) lists various qualifications focused on failure mechanism-based stress tests for packaged integrated circuits (AEC-Q100) and discrete semiconductors (AEC-Q101) used in automotive applications. Navitas' GaNSafe has been qualified to both standards to ensure that both the discrete power FET stage and the combined IC solution meet these stringent specifications. To support the qualification, Navitas has created a reliability report that analyzes over 7 years of production and field data. It demonstrates their track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready. This reliability report is available to qualified customers.

Reliable Board-to-Board Connection Solution

Learn more:
we-online.com

Product Release
2025-04-11

Würth Elektronik ICS highlights its lead-free Powerelement 'LF PowerBasket', a pluggable high-current contact for contacting printed circuit boards in demanding industrial and automotive applications. The LF PowerBasket can be connected to the PCB using press-fit technology, SMT or THT. Thanks to a special contact alloy, the LF PowerBasket can be used at a continuous operating temperature of 150 °C. The contact springs of the LF PowerBasket form a basket that is designed to hold the contact pins and blades with low insertion forces. This basket design of the LF PowerBasket without a plastic housing is characterized by a position tolerance of 0.6 mm. The Powerelement can therefore be used for board-to-board connections with multiple contacts. The pluggable connections enable reduced installation effort and simplified maintenance procedures.

Research: Tree Gum supercharges Supercapacitor Lifespan

Learn more:
gla.ac.uk

Industry News
2025-04-11

A waste gum produced by trees found in India could be the key to unlocking a new generation of better-performing, more eco-friendly supercapacitors, researchers say. Scientists from universities in Scotland, South Korea and India are behind the development, which harnesses the unique properties of the otherwise useless tree gum to prevent supercapacitors from degrading over tens of thousands of charging cycles. The team's finding could help reduce the environmental impact of supercapacitors, whose long-term performance can be affected by their use of acidic electrolytes, which can cause unwanted side reactions with their metal electrodes, reducing their ability to hold their full charge over time.bIn a paper published in the journal Energy Storage Materials, the researchers demonstrate how they combined gum kondagogu, a polysaccharide produced by the bark of the Cochlospermum Gossypium tree, to sodium alginate to manufacture a spongelike biopolymer they called 'KS'. They found that adding KS to the acidic electrolyte of a conventional supercapacitor helped to create a protective layer over its carbon electrodes. The KS layer helped prevent physical degradation of the electrodes while still allowing the ion transport process which enables the supercapacitor to charge and discharge. In lab tests, they showed that their improved electrolyte boosted the supercapacitor's performance significantly, helping it maintain 93 % of its full energy capacity after 30,000 cycles. Over the same span, the capacity of an otherwise identical supercapacitor tested by the team dropped to just 58 %. The team's paper, titled 'Long-lasting supercapacitor with stable electrode-electrolyte interface enabled by a biopolymer conjugate electrolyte additive', is published in Energy Storage Materials.

Joint Development Agreement for GaN Power

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xfab.com

Industry News
2025-04-10

IQE and X-FAB Silicon Foundries have signed a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution. With an initial two-year scope of work, IQE and X-FAB will collaborate to develop a 650V GaN device. The agreement will leverage IQE's GaN epitaxy design and process expertise, along with X-FAB's technology development and device fabrication capabilities to offer an optimized technology-substrate combination for automotive, data center and consumer applications. This collaboration will provide fabless semiconductor companies with an off-the-shelf GaN platform. The technology will also serve as a foundation for future product development, extending beyond 650V to address the growing market demand for Power Electronics.

Robots and Drones are making our World safer and protecting Lives

Learn more:
vicorpower.com

Industry News
2025-04-09

The second eBook in the Vicor powering innovation series highlights designs using 48 V and high-density power modules to protect our world. The company describes how its compact and scalable power solutions enable customers to design life-saving products and mission critical devices in its latest eBook, Protecting and Saving Lives. This resource imparts the vital role that high-density power modules play in ensuring safety and reliability across various industries, such first-responders, medical and defence. The eBook unpacks the growing importance of robotics and tactical drone support for first responders and emergency services. These drones can be rapidly deployed in the face of natural disasters to provide instant communication or deliver quick and crucial supplies to hard-to-reach locations. The unique guide explores the power delivery networks of Vicor power solutions, delineating how the flexible and scalable solutions support maximum payload under rugged, demanding conditions. From underwater robots securing ports to drones delivering emergency supplies to storm-ravaged areas, the power modules ensure that critical systems operate flawlessly in any environment. These applications and devices depend on the most advanced and reliable 48V power delivery networks to ensure these lifesaving applications perform when needed most. It includes case studies, technical insights like detailed explanations of the design features and technologies as well as industry applications.

Red Dot Award for Product Design 2025

Learn more:
recom-power.com

Industry News
2025-04-09

RECOM's AC/DC RACPRO1 DIN Rail power supplies have been awarded the Red Dot Award: Product Design 2025, one of the highest possible international recognitions for excellence in design and innovation. The Red Dot Award honors products that combine reliable technical performance with outstanding design. The RACPRO1 Series was chosen for its compact form factor, efficiency and industrial design, specifically tailored for next-generation automation and control systems.

Stable Operating Range for GaN MISHEMTs in RF Power Amplifiers identified

Learn more:
imec-int.com

Industry News
2025-04-03

Imec, a research and innovation hub in nanoelectronics and digital technologies, demonstrates that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility Transistors) maintain consistent performance when operating within a well-defined range. These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication. GaN MISHEMTs are being explored for use in 5G+/6G RF systems due to their excellent efficiency and power-handling capabilities. However, these devices face challenges, particularly with positive gate bias instability (ΔV_th), where shifts in the threshold voltage under certain conditions can affect the performance and long-term reliability of the power amplifier. Gate bias instability in GaN MISHEMTs is a complex and largely unexplored phenomenon that can occur in the different operational states -off, semi-on, and on state- each exhibiting distinct instability mechanisms. Moreover, its role in the power amplifier operation has not been widely studied, partly because traditional RF power amplifiers typically use GaAs) HBT or HEMTs without a dielectric gate. To bridge this gap, imec researchers introduce a pragmatic analytical approach that directly compares a stable range of gate voltages in DC conditions with the actual gate modulation range in the RF power amplifier operation. Their analysis reveals a strong overlap between these two ranges, confirming that GaN MISHEMTs remain stable within the typical voltage swing of RF power amplifiers. This allows linearly operating power amplifiers to be designed that avoid a ΔV_th concern. The researchers also show that the presence of naturally occurring positive interfacial polarization charges at the material interface plays a key role in preventing unwanted shifts in operating voltage over time.

High Power RF Switch

Learn more:
menlomicro.com

Product Release
2025-04-01

Menlo Microsystems released to production the MM5230, a small form-factor, high performance RF switch. The MM5230 is engineered for high-power applications, supporting up to 25 W continuous and 150 W pulsed power. At the same time, its compact, 2.5 mm x 2.5 mm size means that the MM5230 can fit easily into a wide range of systems without taking up valuable board space. The switch operates seamlessly from DC to 18 GHz, and with its versatile Super-Port mode, extends to 26 GHz, making it well-suited for a wide variety of end applications. The contact design and materials, inherent in the Ideal Switch® technology, enable over 50 billion switching cycles typically. Being an RF device the insertion losses play an important role. With an on-state insertion loss of 0.3 dB at 6 GHz, the MM5230 minimizes signal degradation, which means that there is almost no loss in signal quality. With a typical IIP3 of 95 dBm, the MM5230 offers high linearity, keeping signals clear and undistorted. The MM5230's Super-Port mode extends its frequency range from 18 to 26 GHz. In this mode, the switch offers improved RF isolation and better return loss, which results in even higher-quality performance, especially when cascading switches. This solution is a perfect fit for several high-demand industries, in application fields like defense and aerospace, test and measurement, medical equipment and wireless infrastructure.

Joint Development of Automotive Components using GaN Semiconductors

Learn more:
rohm.com

Industry News
2025-03-28

Mazda Motor Corporation and ROHM have commenced a joint development of automotive components using GaN power semiconductors. Since 2022, Mazda and ROHM have been jointly working on the development of inverters using SiC power semiconductors under a collaborative framework for the development and production of electric drive units. Now, they have also embarked on the development of automotive components using GaN power semiconductors, aiming to create innovative automotive components for next-generation electric vehicles. Mazda and ROHM aim to materialize the concept and unveil a demonstration model within FY2025, with practical implementation targeted for FY2027.

CEO of SiC Semiconductor Manufacturer appointed

Learn more:
wolfspeed.com

People
2025-03-27

Wolfspeed appointed Robert Feurle as Chief Executive Officer (CEO), effective May 1, 2025, following a comprehensive internal and external search by the Board of Directors. Feurle succeeds Thomas Werner, who is serving as interim Executive Chairman and will return as Chairman of the Board following the transition. Being a citizen of both the United States and Germany, Feurle will be returning to the United States where he previously spent a decade in executive roles at Micron Technology and will be relocating to the Company's headquarters in Durham, North Carolina, where he will work closely with Werner to ensure a smooth transition. Most recently, he served as Executive Vice President and General Manager of the Opto Semiconductors Business Unit at ams-OSRAM AG, where he was responsible for managing more than 10,000 employees in sites and factories around the world. Previously, at Infineon Technologies, Micron Technology, Qimonda, and Siemens, Feurle managed strategic initiatives that enhanced competitiveness and increased revenue growth in challenging global markets. Previously e. g. at Infineon Technologies, he strategically expanded market opportunities with product introductions in the field of IGBT and SiC technologies and leading a global business unit focused on competitive differentiation and profitable growth. He was also part of the team at Infineon supporting the proposed acquisition of the Wolfspeed operations in 2016. "His experience in market-driven technology innovation and strategic business scaling makes him uniquely suited to advance Wolfspeed's global leadership in silicon carbide technology", Wolfspeed says in a press release.

EMC Protection: Now also available for thin Cables

Learn more:
we-online.com

Product Release
2025-03-25

Snap ferrites, developed in-house with technology using keys for retroactive cable noise suppression, are core products of Würth Elektronik. Now the STAR TEC and STAR-TEC LFS product families have grown as the company now also offers a ferrite for cable diameters of 2 to 3 mm that features all the proven practical benefits familiar from Würth Elektronik snap ferrites. EMC protection is becoming increasingly important for applications using smaller cable diameters as compact packages are facing more sources of interference. This makes noise suppression increasingly challenging. The STAR-TEC snap ferrites are used for retroactive suppression of frequency-dependent and conducted interference on single conductors in the frequency range from 1 MHz to 1 GHz. The STAR-TEC LFS series of snap ferrites were specifically designed for low-frequency applications in the 300 kHz to 30 MHz range. These snap ferrites offer a cable pre-fixation feature to simplify handling, and the pinching safeguard prevents assembly faults. The key, included with sample deliveries, allows the ferrites to be opened and reinstalled at any time, making EMC testing a snap. The internal lock also prevents unauthorized cable removal without the key. The plastic housing of the NiZn and MnZn ferrites is classified according to UL94 V0 and specified for an operating temperature range of -50 °C to +105 °C. All STAR-TEC and STAR-TEC LFS snap ferrites, now available for cable diameters between 2 and 25 mm.

Subsidiary for the Benelux Region

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plasmatreat.com

Industry News
2025-03-24

Job van Galen takes over the management of the newly founded subsidiary of Plasmatreat in Eindhoven, the Netherlands. The company, which manufactures and develops atmospheric pressure plasma technologies for surface treatment, serves customers in Belgium, Luxembourg and the Netherlands directly from this office, and Job van Galen is Managing Director of the new subsidiary. Van Galen holds a Bachelor of Science in Engineering Physics (2017) from Fontys University of Applied Sciences. During his more than eleven years with an international electrical equipment manufacturer, he held various technical and strategic positions and worked with companies in the automotive, medical, semiconductor, consumer goods and energy sectors. In his new role at Plasmatreat, van Galen will be responsible for technical sales, the development of sustainable relationships and application development with valued customers. Atmospheric-pressure plasma technology makes it possible to precisely modify material surfaces, improve adhesion properties and create environmentally friendly alternatives to chemical pretreatment.

Stefan Witte joins Foxy Power

Learn more:
foxypower.com

Industry News
2025-03-24

Foxy Power is pleased to welcome Stefan Witte as our new Technical Sales Director. With over 30 years of experience in the power electronics industry, Stefan brings a wealth of expertise in R&D, sales, and business development, further strengthening Foxy Power's capabilities and market presence. Stefan began his career in power electronics with a strong foundation in research and development before transitioning to distribution in 2006. Since then, he has held leadership roles in supplier management, technical sales, and international business development for high-power products. The Foxy Power team is excited to have Stefan on board and looks forward to his contributions in driving growth and innovation.

PCIM Asia Shanghai 2025

Learn more:
pcimasia-shanghai.cn

Event News
2025-03-20

The PCIM Asia Shanghai 2025 will open its doors from September 24th to 26th, 2025 at the Shanghai New International Expo Centre in Shanghai, China. With a focus on the dynamic power electronics markets in eastern and southern China, it is a platform for global experts and companies to share and discover innovative technologies and solutions. The PCIM Asia Shanghai offers an overview of the entire value chain. The exhibition will showcase developments in photovoltaics, energy storage, charging infrastructure, electric drive systems, rail transportation, automation technology, and smart building services, among others. These sectors are gaining in importance, especially within China and Asia. Combining an exhibition and conference format, the PCIM Asia Shanghai offers a central platform for direct exchange between industry, science, and research. The event brings together industry professionals to discuss current industry topics, present forward-looking solutions, and actively shape developments in the power electronics industry. For the visitors, the more than 260 exhibiting companies, presentations, practice-based sessions, and in-depth discussions will provide lots of inputs for the further development of the industry. Exhibitors include such major companies as Mitsubishi, Rohm, Fuji, Innoscience, Sun.King and CRRC. At the end of this year there will also take place a PCIM Asia New Delhi Conference on December 9th and 10th, 2025, in New Delhi, India.

Lithium-Ion Battery Management Platform

Learn more:
renesas.com

Product Release
2025-03-18

Renesas Electronics introduced all-in-one solutions for managing lithium-ion battery packs in a wide range of battery-powered consumer products, such as e-bikes, vacuum cleaners, robotics and drones. With pre-validated firmware provided, the R-BMS F (Ready Battery Management System with Fixed Firmware) will reduce the learning curve for developers, enabling rapid designs of safe, power-efficient battery management systems. Designed for lithium-ion batteries in both 2-4 and 3-10 cell series (S), R-BMS F solutions include Renesas' fuel gauge ICs (FGICs), an integrated microcontroller (MCU) and an analog battery front end, pre-programmed firmware, software, development tools and full documentation – all available in complete evaluation kits that are now ready to ship.

Chokes Offer integrated Magnetics and special Mounting

Learn more:
premiermag.com

Product Release
2025-03-18

Premier Magnetics introduces the PM-CMCX5 Series, the first offering in the company's CM Guard Series™ of advanced-technology chokes. The CM Guard Series implements integrated magnetics technology to build common mode (CM) and differential mode (DM) attenuation into a single device. The PM-CMCX5 Series devices' performance features a strong winding-to-winding insulation of 5 kV, an operating temperature from -60 °C to +155 °C and low-capacitive coupling to the core. The mechanical stability is achieved utilizing Premier Magnetics' proprietary Snap-In Technology to secure parts to the PCB without the use of epoxy during the assembly process. The PM-CMCX5 Series offers sixteen models with a selection of spread or compressed windings and common mode choke inductances from 0.5 to 30 mH.

Korean Automotive Tier-1 takes Stake in U.S. Fabless Semiconductor Company for EV Applications

Learn more:
elevationmicro.com

Industry News
2025-03-18

Elevation Microsystems, delivering energy-efficient high-voltage power management solutions for sustainable electrification, announced that Hyundai Mobis has acquired a significant stake in the company. The $15 Million investment was completed in November 2024, as disclosed in the Hyundai Mobis' 2024 business report to the Financial Supervisory Service's electronic disclosure system (DART). Elevation Microsystems has expertise in designing high-voltage power semiconductors, including SiC and GaN FETs with isolated gate drivers, and Matrix LED drivers.

Power Management Chips for Data Centers

Learn more:
ti.com

Product Release
2025-03-17

Texas Instruments (TI) debuted power-management chips to support data centers. The TPS1685 is claimed to be "the industry's first 48 V integrated hot-swap eFuse with power-path protection to support data center hardware and processing needs". The devices are rated for more than 6 kW. To simplify data center design, TI also introduced a family of integrated GaN power stages, the LMG3650R035, LMG3650R025and LMG3650R070, in industry-standard TOLL packaging.

Up to 92 % Efficiency for Power Supplies

Learn more:
power.com

Product Release
2025-03-17

Power Integrations has announced TinySwitch™-5, extending the output power of the family of integrated off-line switcher ICs to 175 W. The TinySwitch-5 achieves up to 92 % efficiency using basic diode rectification and optocoupler feedback. The control engine built into the TinySwitch-5 switcher ICs seamlessly manages switching frequency and power delivery to maximize efficiency, even at light loads. This enables power supplies that easily meet the light-load power consumption limit of 300 mW, set by the European Commission Energy-related Products (ErP) Directive 2009/125/EC, while still delivering up to 220 mW output power for display, controls and communications functions. An enhanced thermal package means that TinySwitch-5 ICs can deliver up to 75 W without a heatsink, and line under- and over-voltage protection ensures robustness for use in countries with unstable mains power. Reference designs are available which describe: a 12 W single-output power supply (DER-1017); a 26.5 W dual-output power supply with high standby efficiency (RDR-1016); a 36 W single-output power supply with high efficiency at light load (DER-1040); and a 120 W power supply with 92 percent efficiency at 230 V AC (DER-1027).

Winner of the PSMA's first Global Energy Efficiency Award

Learn more:
pulsiv.com

Industry News
2025-03-17

Pulsiv have won the PSMA's (Power Sources Manufacturers Association) first Global Energy Efficiency Award. First announced on 22nd April 2024 (Earth Day), the goal of the award was to recognize a "world achievement in system design to improve energy efficiency". Nominations were collected until 9th September 2024, with the finalists being announced on 2nd October 2024 (Energy Efficiency Day). The judges evaluated finalists based on their total global impact on the power electronics industry and where the focus was on energy efficiency, rather than renewables or electrification. During a ceremony at APEC 2025 in Atlanta, Georgia, USA, which coincided with the PSMA's 40th anniversary, Pulsiv were announced as the winner for their 65 W USB-C design, which delivers low operating temperatures and a peak efficiency of 96 %. Pulsiv's 65 W USB-C reference design combines the company's OSMIUM PFC technology with QR flyback and highly optimized, ultra-compact magnetics. It represents the first in a series of designs aimed at pushing the boundaries of power conversion by significantly lowering operating temperatures, minimizing losses, and reducing size to create a sustainable platform for the USB-C standard.

Electric Two-Wheeler Ecosystem to accelerate E-Mobility Innovation

Learn more:
microchip.com

Product Release
2025-03-17

Microchip Technology launched its Electric Two-Wheeler (E2W) ecosystem, which is a suite of pre-validated reference designs that addresses key challenges in e-scooter and e-bike development, including power efficiency, system integration, safety and time-to-market. By offering automotive-grade, scalable solutions, Microchip enables manufacturers to streamline development and build reliable, feature-rich electric two-wheelers at various power levels and feature requirements. Backed by design files, schematics, BOM (Bill of Materials) and global technical support, developers can decrease their time-to-market for the next-generation e-scooters and e-bikes. The E2W ecosystem comprises e. g. a BMS (Battery Management System) with intelligent power conversion and sensing. A 48 V to 12 V Power Conversion Reference Design facilitates high-efficiency power distribution, improving overall system reliability, while a 7.4 kW Single-Phase AC EV Charger Reference Design offers home charging with built-in protection features. A USB-PD Dual Charging Port is designed to provide fast, flexible charging for mobile devices to enhance user convenience. Furthermore, 350 W to 10 kW traction motor control reference cater for smooth acceleration, improved energy efficiency and precise control. Pre-integrated firmware and modular design simplify system development and reduce time-to-market. Several additional digital functionalities for system integration, smart vehicle control, intelligent touch displays and a connected user experience complement the ecosystem.

Exceeding the 80 PLUS 'Ruby' Certification for Highest Level of Efficiency in AI Data Center Power Supplies

Learn more:
navitassemi.com

Industry News
2025-03-17

Navitas Semiconductor has announced that its portfolio of 3.2 kW, 4.5 kW, and 8.5 kW AI data center power supply unit (PSU) designs exceed the new 80 PLUS 'Ruby' certification, focused on the highest level of efficiency for redundant server data center PSUs. The 80 PLUS certification program assesses and certifies the energy efficiency of internal PSUs in computers and servers. The 'Ruby' certification was announced in January 2025 by 80 PLUS's administrating body, CLEAResult, following its endorsement by the Green Grid consortium. 'Ruby' is the most rigorous PSU efficiency standard since the 'Titanium' certification was released 14 years ago. In comparison, Ruby sets an additional 1% system efficiency across all load conditions, except at 50% load (which requires a 0.5% increase), to achieve a new benchmark of 96.5% efficiency.

Transducer Electronic Datasheet

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danisense.com

Product Release
2025-03-16

At APEC 2025 Danisense launched a Transducer Electronic Datasheet (TEDS) functionality for its range of current transducers to further streamline lab testing processes. For test engineers, the TEDS offers an enhanced set-up, making the whole processes very quick and easy. In addition, it improves the measurement accuracy in laboratory environments. With the introduction of its "augmented" TEDS, Danisense goes beyond the requirements of the IEEE 1451 standard by offering a wealth of additional data. While the IEEE standard only includes basic details such as transducer type, model, serial number, and turn ratio, Danisense's TEDS provides engineers with expanded parameters that are vital to improving overall performance and ensuring a seamless "Plug & Play" experience. The expanded parameters of Danisense's TEDS include offset data, as well as AC and DC calibration data, allowing engineers to implement compensation loops that enhance the transducer's overall accuracy and performance. Additionally, phase shift data is available, enabling the introduction of phase compensation strategies that extend accuracy over a broader frequency range. The company also incorporates power supply information within TEDS, setting power limits to avoid set-up errors and ensure precise calibration management by including calibration dates and alarms, so users can easily track and schedule regular calibration periods. The new TEDS functionality is available across the range of Danisense current transducers, covering both current and voltage outputs.

Magnetics Company: "Preferred Partner" of a Semiconductor Company

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we-online.com

Industry News
2025-03-13

Würth Elektronik is broadening its collaboration with semiconductor manufacturers. The company, which has collaborated with major industry players for many years, was recently recognized by Infineon as a 'Preferred Partner'. Developers benefit from this partnership by gaining access to over 480 reference designs featuring Infineon chips and compatible components on the Würth Elektronik website: A dedicated section on the Würth Elektronik website provides access to all reference designs for which Infineon uses Würth Elektronik components. The filtering functions allow users to select a reference design optimized for their application. Each design includes a comprehensive description, detailed circuit diagrams, an IC specification, and a bill of materials for the suitable Würth Elektronik components. Developers can request these components as free lab samples or access additional specs via the REDEXPERT simulation platform. The database currently includes over 25,000 Würth Elektronik components.

Eliminating the DC-Link Capacitors: Single-Stage Bi-Directional Switch Converters

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navitassemi.com

Product Release
2025-03-13

Navitas has announced "the world's first production-released 650 V bi-directional GaNFast™ ICs and high-speed isolated gate-drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from two-stage to single-stage topologies". Targeted applications range across EV charging (On-Board Chargers and roadside), solar inverters, energy storage and motor drives. According to Navitas over 70% of today's high-voltage power converters use a 'two-stage' topology. For example, a typical AC-DC EV OBC implements an initial power-factor-correction (PFC) stage and a follow-on DC-DC stage, with bulky 'DC-link' buffering capacitors. Bi-directional GaNFast consolidates the two stages into a single, high-speed, high-efficiency stage and in the process, eliminates the bulky capacitors and input inductors - the ultimate solution in EV OBCs. Previously, two discrete, 'back-to-back' single switches had to be used, but new bi-directional GaNFast ICs are monolithically integrated single-chip designs with a merged drain structure, two gate controls, and a patented, integrated, active substrate clamp. One high-speed, high-efficiency bi-directional GaNFast IC replaces up to 4 older switches, increasing system performance while reducing component count, PCB area, and system costs. The initial 650 V bi-directional GaNFast ICs include NV6427 (100 mΩ R_{SS(on) typ}.) and NV6428 (50 mΩ R_{SS(on) typ}.) in thermally enhanced, top-side-cooled TOLT-16L (Transistor Outline Leaded Topside-cooled) packaging. The product family will be extended into lower R_SS(on) offerings in the future. The IsoFast™ devices are galvanically isolated, high-speed drivers optimized to drive bi-directional GaN. Single-stage evaluation boards and user guide showcasing both IsoFast and bi-directional GaNFast ICs are available for qualified customers.

Customizable High-Current Power Control Solution with Liquid Cooling

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advancedenergy.com

Product Release
2025-03-13

Advanced Energy Industries announced its Thyro-PX® Modular Solution, a fully configurable, distributed architecture that enables operators to build custom power control with liquid-cooled high-power stacks and external control units to meet their precise needs. The components are designed to meet the requirements of glass manufacturing, arc furnaces, rectifiers, and other high-current heating elements. Configuration options include separating control and power functions to minimize EMC issues. Thyro-PX's silicon-controlled rectifier (SCR) technology controls temperature and power. It offers precise phase angle control and improved efficiency, while reducing costs and CO₂ emissions compared to standard thyristors. Each Thyro-PX control unit can drive up to three high-power water-cooled Thyro-PX stacks. The Thyro-PX Modular Solution directly integrates with common field bus systems, achieving a current accuracy of 0.5%, with simple AC and DC configurations and a voltage range of up to 690 V_AC (750 V_DC), with 1,000 V_AC available on demand.

President and CEO of Semiconductor Company appointed

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allegromicro.com

People
2025-03-13

Allegro MicroSystems appointed Mike Doogue as President and Chief Executive Officer and as a member of the Board. Mr. Doogue's ascension to CEO comes after 27 years of rising through the leadership ranks at Allegro, during which time he enabled many of Allegro's disruptive technologies, originally as an engineer and later as a business leader. Immediately prior to this promotion, Mr. Doogue served as Allegro's Executive Vice President and its first Chief Technology Officer (CTO), leading technology development and worldwide operations, which includes manufacturing, procurement, and quality. Mike Doogue also previously served as the Company's Senior Vice President of Technology and Products, which included direct oversight of each of the Company's business units. As a testament to his roots as an engineer and technology innovator, Mr. Doogue personally holds 75 semiconductor-related U.S. patents. Mike Doogue succeeds Vineet Nargolwala, who is stepping down as President and CEO and as a member of the Board.

Collaboration on Proprietary Power Electronics for Grid Technology

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enoda.com

Product Release
2025-03-12

ENODA and Mersen have been working in collaboration on the proprietary power electronics of ENODA's flagship technology, the Enoda PRIME® Exchanger and will exhibit the stack at the upcoming Applied Power Electronics Conference (APEC) in March. The Enoda PRIME Exchanger is a dynamic power flow hardware technology, which can automate and enhance power quality in low-voltage networks. ENODA is solving the fundamental challenge of the energy system: balancing exponentially rising electricity demand using generation sources that are volatile and variable. ENODA technologies can enhance grid stability, improve grid resilience, and accelerate decarbonisation. The Enoda PRIME® Exchanger is a dynamic power flow hardware technology, which can automate and enhance power quality in low-voltage networks. The Prime Exchanger has capabilities including dynamic voltage regulation; it can autonomously balance the three phases, remove damaging harmonics, correct power factor, and can provide decarbonised frequency services at scale. Thanks to Mersen's widely acclaimed expertise in laminated bus bar, cooling, high-speed fuses, film capacitor design, mechatronics, test and manufacturing, Mersen was selected as ENODA's partner to assist during the development phase of the silicon carbide-based power electronics stack. The Enoda PRIME Exchanger's power electronics stack controls the primary electromagnetic subsystem. This in turn, allows for control of all 12 degrees of freedom within the 3 phase signal.

4-Level Buck Converter for Battery Charging Applications

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psemi.com

Product Release
2025-03-12

pSemi announced a multi-level technology, which is capable of fast battery charging in a low profile (<1 mm) application. The converter operates over an input range from 4.5 V to 18 V covering USB and wireless charging standards. In general, 4-level buck mode is enabled for higher input voltages, and 3-level buck mode for mid-to-low input voltages. Additionally, the device can be operated in fixed ratio, capacitor divider mode with divider ratios 2 and 3 when the input voltage is a programmable power source (PPS). Current delivery is up to 6 A per device, with the option to parallel devices to achieve faster charging times, in all operation modes using a 1 mm height inductor.

Two additional MOSFET Package Options for High-Current Applications

Learn more:
aosmd.com

Product Release
2025-03-12

Alpha and Omega Semiconductor released two surface mounting package options for its high power MOSFET portfolio. Designed to meet the robust packaging requirements for the most demanding applications that require increased performance and reliability, the new GTPAK™ and GLPAK™ packages will first be available on AOS' AOGT66909 and AOGL66901 MOSFETs, respectively. The GTPAK offered with the AOGT66909 is a topside cooling package designed with a large exposed pad for more efficient heat transfer. The topside cooling technology transfers most heat to the heat sink mounted on the top exposed pad. This feature allows the GTPAK to offer a more effective thermal dissipation route than going through the PCB board, allowing a lower-cost PCB, such as FR4, to be used. The GLPAK offered with the AOGL66901 is a gull-wing version of AOS' TOLL package. It is designed using AOS' clip technology to achieve a high inrush current rating. The GLPAK with clip technology offers low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding. The GTPAK and GLPAK packages feature gull-wing leads, enabling good solder joint reliability even for insulated metal substrates (IMS) applications. This gull-wing construction also provides enhanced thermal cycling for IMS boards and other critical applications that must meet higher reliability objectives. AOS MOSFETs in the GTPAK and GLPAK packages are manufactured in IATF16949-certified facilities and are compatible with automated optical inspection (AOI) manufacturing requirements.

3-Phase BLDC Motor Driver

Learn more:
qorvo.com

Product Release
2025-03-11

Qorvo added an integrated brushless DC (BLDC) motor driver to its growing family of power management products. This 160 V, 3-phase gate driver enables smaller solution size and reduces design time as well as bill of material (BOM) cost/count compared to a discrete approach to automotive and industrial motor control. Qorvo's ACT72350 replaces up to 40 discrete components in a BLDC motor control system and offers a configurable AFE, enabling engineers to configure their exact sensing and position detection requirements. It also includes a configurable power manager with an internal DC/DC Buck converter and LDOs to support internal components and serve as an optional supply for the host MCU device. The 25 V to 160 V input range also allows for the reuse of the same design for several battery-operated motor control applications including power and garden tools, drones, EVs and e-bikes. The ACT72350 provides programable propagation delay, precise current sensing and BEMF feedback and differentiated features for safety-critical applications. This SOI-based motor driver is available now in a 9 mm x 9 mm, 57-pin QFN package. An evaluation kit and a QSPICE model of the ACT72350 are also available.

Phase 17 Reliability Report: Advancing GaN Reliability and Lifetime Projections

Learn more:
epc-co.com

Industry News
2025-03-11

Efficient Power Conversion (EPC) has released its Phase 17 Reliability Report, emphasizing GaN's position as a highly reliable technology for power electronics, automotive, AI, space, and industrial applications. The latest reliability report introduces expanded lifetime models, mission-specific reliability projections, and new physics-based wear-out mechanisms, providing engineers with more accurate and practical reliability data for GaN power devices. The key highlights of the Phase 17 Reliability Report include an expanded gate lifetime model that incorporates gate leakage current effects across voltages and temperatures, leading to enhanced impact ionization modeling as well as repetitive transient gate overvoltage testing which develops and validates a 7 V gate overvoltage rating, addressing resonance-like transient stress in real-world applications. Other highlights include enhanced drain overvoltage robustness, pulsed current rating data (extending testing to over 100 million pulses), a comprehensive thermomechanical lifetime model now including power cycling modeling and mission-specific reliability insights. EPC's test-to-fail methodology continues to push GaN technology beyond traditional silicon MOSFETs. By integrating real-world stress conditions into advanced lifetime models, the Phase 17 report allows for more accurate reliability projections for next-generation power applications.

Next Generation of high-density Power Modules for VPD

Learn more:
infineon.com

Product Release
2025-03-10

Infineon Technologies launched the next generation of high-density power modules which play a pivotal role in enabling AI and high-performance compute. The OptiMOS™ TDM2454xx quad-phase power modules are claimed to "enable best-in-class power density and total-cost-of-ownership (TCO) for AI data centers operators". The OptiMOS TDM2454xx quad-phase power modules enable true vertical power delivery (VPD) and offer a current density of 2 A/mm². The modules follow the OptiMOS TDM2254xD and the OptiMOS TDM2354xD dual-phase power modules introduced by Infineon last year. In traditional horizontal power delivery systems, power needs to travel across the surface of the semiconductor wafer, which can result in higher resistance and significant power loss. Vertical power delivery minimizes the distance that power needs to travel, thereby reducing resistive losses enabling increased system performance. The OptiMOS TDM2454xx modules are a fusion of Infineon's OptiMOS 6 trench technology, chip-embedded package and low-profile magnetic design that continue to push the envelope for performance and quality of VPD systems. Additionally, the OptiMOS TDM2454xx has a footprint that is designed to enable module tiling and improving current flow that enhance electrical, thermal and mechanical performance. The OptiMOS TDM2454xx modules support up to 280 A across four phases with an integrated embedded capacitor layer within a small 10 mm² x 9 mm² form factor.

Parallel Combination of ICeGaN HEMT and IGBT

Learn more:
camgandevices.com

Product Release
2025-03-10

Cambridge GaN Devices (CGD) revealed more details about a solution that will enable the company to address EV powertrain applications over 100 kW with its ICeGaN® gallium nitride (GaN) technology. Combo ICeGaN combines smart ICeGaN HEMT ICs and IGBTs in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) solutions. The proprietary Combo ICeGaN approach uses the fact that ICeGaN and IGBT devices can be operated in a parallel architecture having similar drive voltage ranges (e. g. 0-20 V) and excellent gate robustness. In operation, the ICeGaN switch is claimed to be very efficient, with low conduction and low switching losses at relatively low currents (light load), while the IGBT is dominant at relatively high currents (towards full load or during surge conditions). Combo ICeGaN also benefits from the high saturation currents and the avalanche clamping capability of IGBTs and the efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT will start to conduct at lower on-state voltages, supplementing the loss of current in the ICeGaN. Conversely, at lower temperatures, ICeGaN will take more current. Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices. ICeGaN technology allows EV engineers to enjoy GaN's benefits in DC/DC converters, on-board chargers and potentially traction inverters. Proprietary parallel combinations of ICeGaN devices with SiC MOSFETs have also been proven by CGD, but Combo ICeGaN – which is now detailed in a published IEDM paper – is said to be "a far more economical solution". CGD expects to have working demos of Combo ICeGaN at the end of this year.

Benchmark for 100 V GaN Power Transistors

Learn more:
epc-co.com

Product Release
2025-03-08

EPC launches EPC2367, a 100 V eGaN® FET with an R_DS(on) of 1.2 m&ohm for power conversion applications. Designed for 48 V intermediate voltage bus architectures, the EPC2367 advances the performance of power systems by reducing power loss, increasing efficiency, and enabling more compact and cost-effective designs. This device is claimed to "set a benchmark in performance compared to both previous-generation GaN and traditional silicon MOSFET solutions". Its footprint measures 3.3 mm × 3.3 mm (QFN package). According to EPC it also provides an "outstanding temperature cycling reliability", which is said to be "4× the thermal cycling capability compared to previous GaN generations". In a 1 MHz, 1.25 kW system, EPC2367 is said to reduce power losses while achieving 1.25× the output power compared to previous GaN and Si MOSFET alternatives. The EPC90164 development board (measuring 2" x 2" or 50.8 mm x 50.8 mm) is a half bridge featuring the EPC2367 GaN FET. It is designed for 80 V maximum operating voltage and 35 A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product's time to market.

80 V/100 V Power MOSFETs

Learn more:
taiwansemi.com

Product Release
2025-03-07

Taiwan Semiconductor (TSC) has expanded its PerFET%trade; family of power MOSFETs with the addition of 80 V and 100 V versions. "Based on TSC's proprietary PerFET device structures and processes, these 80 V / 100 V N-channel power MOSFETs offer a best-in-class figure of merit (FOM: R_DS(on)* Q = 184) and an industry-leading 175 °C avalanche rating", the company claims. The AEC-Q-qualified devices are suited for automotive power applications and other non-automotive commercial and industrial power applications. PerFET devices are housed in TSC-designed, industry-standard-size (5 mm x 6 mm) PDFN56U (single/dual) packages whose wettable flank improves solder joint reliability and AOI accuracy during PCB assembly. Six devices comprise the 100 V PerFET series, with single-output current ratings of 50 – 100 A and dual-outputs rated at 31 A. Target applications are 48 V automotive, SMPS, server and telecom, DC/DC converters, motor drives and polarity switches. The 80 V PerFET series also offers six devices. Single-output models feature current ratings of 33 – 110 A and 31 – 33 A for dual-output models. In addition to those targeted by the 100 V series, 80 V PerFETs are suitable for ideal diodes, USB-PD and type-C charger/adapters, UPS, solar inverters, LED lighting and telecommunications power applications.

More News	Teaser	NewsID	NewsSection	Title	Text	Announced	AnnouncedMMM	Picture	PicturePath	WebLink	WebLinkText
On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers	Wide bandgap semiconductors such as SiC, GaN, and ...	12412	Industry News	On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers	Wide bandgap semiconductors such as SiC, GaN, and diamond are critical materials for next-generation power electronics, optoelectronics, and quantum technologies. However, their performance is highly sensitive to internal stress, strain, and defects introduced during growth and processing. In this webinar, you can explore how Raman, Photoluminescence (PL), Time-Resolved Photoluminescence and Cathodoluminescence can be powerful, non-destructive tools for characterizing these properties with high spatial and spectral resolution. It is discussed how Raman spectroscopy can reveal information about crystal quality, phonon shifts due to strain, and temperature effects, while PL provides insight into electronic and optical properties, impurity levels, and defect states. Real-world case studies and application examples highlight how these techniques can be used to optimize material growth, improve device yield, and accelerate R&D.	11.06.2025 12:00:00	Jun	news_2025-06-15_7.png	\images\news_2025-06-15_7.png	https://angelbc.zoom.us/webinar/register/WN_d7KosM0sRgWBvrv1RQYXIg#/registration	horiba.com
1200 V SiC Diodes: Manufacturing Collaboration between Indian and Taiwanese Companies	RIR Power Electronics announces the successful pro...	12411	Industry News	1200 V SiC Diodes: Manufacturing Collaboration between Indian and Taiwanese Companies	RIR Power Electronics announces the successful production expansion and shipment of 1200 V SiC diodes from Taiwan. This was achieved through a strategic collaboration with a contract fab at Pro Asia Semiconductor Corporation (PASC), Taiwan and by leveraging technology IP that RIR Power had acquired from Sicamore Semi, USA. The product portfolio includes 1200 V Schottky Barrier Diodes (SBDs) ranging from 2 A to 60 A, addressing the most common ratings used across multiple applications and markets globally. Besides serving existing domestic Indian and the USA customers, shipping from Taiwan also provides improved access to strategic high-growth markets for SiC devices in the South East Asian region. RIR Power's SiC technology and portfolio are the result of a comprehensive technology transfer agreement signed with Sicamore Semi in October 2024. The agreement granted RIR Power exclusive rights to manufacture, market and commercialize SiC diodes, MOSFETs and IGBTs using Sicamore's proven IP and process know-how. Originally developed for 4-inch wafers, the technology has been successfully adapted for 6-inch wafer production. The scale-up was achieved with technical support from Vortex Semi, USA and PASC. The 1200 V SiC diodes, produced at PASC's fabrication facility in Taiwan, have been shipped to India and validated to meet global industry standards. RIR Power has already secured purchase orders from key suppliers to the commercial, industrial and defence sectors. This achievement aligns with India's Make in India initiative, reinforcing the nation's semiconductor supply chain and reducing reliance on imports for critical defence technologies. RIR Power's new SiC semiconductor facility in Odisha, is set to further enhance India's indigenous manufacturing capabilities.	05.06.2025 11:00:00	Jun	news_2025-06-15_6.png	\images\news_2025-06-15_6.png	https://www.ruttonsha.com/news-update/rir-power-electronics-expands-manufacturing-of-1200v-silicon-carbide-sic-diodes-in-collaboration-with-pro-asia-semiconductor-corporation-taiwan	ruttonsha.com
Online Calibration Portal for brand agnostic Calibration Services for Current Transducers	Danisense has introduced its 'Online Calibration P...	12409	Industry News	Online Calibration Portal for brand agnostic Calibration Services for Current Transducers	Danisense has introduced its 'Online Calibration Portal' to offer brand agnostic calibration services for current transducers and make the whole process as smooth and easy as possible. Via the personal online portal, which is available on the company's website, customers can book their brand agnostic calibrations for current transducers to be performed in the ISO 17025 accredited Calibration Lab from Danisense, located at the company's Taastrup headquarters in Denmark. The 'Online Calibration Portal' provides customers with regular online and email updates during the calibration process, calibration reports, detailed order tracking as well as an online payment function, etc.	05.06.2025 09:00:00	Jun	news_2025-06-15_4.png	\images\news_2025-06-15_4.png	https://danisense.com/news/danisense-launches-online-calibration-portal/	danisense.com
Digital Multimeter Series	Rohde & Schwarz presents the R&S UDS digital multi...	12418	Product Release	Digital Multimeter Series	Rohde & Schwarz presents the R&S UDS digital multimeter series, which can display three measurements simultaneously and offer versatile measurement functions and various interfaces for remote control. Models are available with a digit resolution of 5 1/2 as well as 6 1/2, the latter providing a basic DC accuracy of 0.0075%. The R&S UDS series replaces the established R&S HMC8012 digital multimeter, offering more accuracy and an updated intuitive user interface. With voltage ranges extending up to 1000 V DC and 750 V AC and a current capacity of 10 A, these multimeters come with a 3.5" OVGA color display. For remote control, the new multimeters offer a variety of interfaces, including USB, IEEE-488 (GPIB) for SCPI-based commands, and LAN (Ethernet).	03.06.2025 11:30:00	Jun	news_2025-06-15_13.jpg	\images\news_2025-06-15_13.jpg	https://www.rohde-schwarz.com/uk/about/news-press/all-news/built-for-accuracy-designed-for-ease-introducing-the-new-r-s-uds-digital-multimeter-series-press-release-detailpage_229356-1564411.html?change_c=true	rohde-schwarz.com
APEC 2026: Call for Technical Sessions Digest Submissions	Texas, from March 22-26, 2026, continues the long-...	12408	Event News	APEC 2026: Call for Technical Sessions Digest Submissions	Texas, from March 22-26, 2026, continues the long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer. Interested authors wishing to present a paper must submit a digest for consideration by the deadline. To facilitate higher quality digest and final manuscript submissions, APEC 2026 offers significantly expanded submission windows for both the phases. Topics of interest are divided into fourteen tracks, each track with a diverse set of subtopics: AC/DC Converters, DC/DC Converters, DC/AC Inverters, Devices and Components, Magnetics, Power Electronics Integration and Manufacturing, Control, Modeling and Simulation, Motor Drives, Power Electronics for Utility Applications, Renewable Energy Systems, Wireless Power Transfer, Transportation Power Electronics, Power Electronics Applications. "APEC provides an ideal balance between academic and industrial research and is a meeting ground for these two areas, unlike any other power electronics conference," said Dhaval Dalal, APEC 2026 Program Chair. "APEC tops the list of the IEEE power electronics conferences for average paper citations - as of May 2025, 7.4 for APEC 2019 and 4.8 for APEC 2022." The Technical Sessions digest should explain the problem that will be addressed by the paper, its major results and how it is different from the closest existing literature. Technical Sessions papers presented at APEC must be original material and not have been previously presented or published.	03.06.2025 08:00:00	Jun	news_2025-06-15_3.png	\images\news_2025-06-15_3.png	https://apec-conf.org/speakers/ts-author-info/	apec-conf.org
Radiation-hardened GaN Transistors	Infineon announced the first of a new family of ra...	12416	Product Release	Radiation-hardened GaN Transistors	Infineon announced the first of a new family of radiation hardened Gallium Nitride transistors, fabricated at Infineon's own foundry, based on its CoolGan™ technology. Designed to operate in harsh space environments, it is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794. These radiation hardened GaN HEMT devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. The first three product variations in this radiation-hardened GaN transistor line are 100 V / 52 A devices featuring an R<sub>DS(on)</sub> of 4 mΩ (typical) and total gate charge of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm²/mg (Au ion). Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794. Infineon emphasizes that it is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications.	29.05.2025 09:30:00	May	news_2025-06-15_11.jpg	\images\news_2025-06-15_11.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFPSS202505-111.html	infineon.com
Flyback Transformers	Sumida announces its CEP1311F Flyback Transformers...	12419	Product Release	Flyback Transformers	Sumida announces its CEP1311F Flyback Transformers, designed specifically for use with "no-opto" isolated flyback circuits, such as the Analog Devices LT8304-1 reference design. This isolated flyback transformer is suited for industrial, automotive, medical, and telecom applications. The CEP1311F (13324-T083 to13324-T087) transformers have single outputs, while the CEP1311F (13324-T196) provides dual isolated outputs. This dual-output CEP1311F (13324-T196) flyback transformer is optimized for LT8304-1 applications. It enables isolated, no-opto flyback conversion with 110-V outputs and 15-V input. Custom configurations are also available. The single-output CEP1311F (13324-T083 to 13324-T087) is available in five output voltages, ranging from 3.3 V to 400 V. The dimensions are 21 mm x 21 mm x 11.8 mm, and the operating temperature range is -40 °C to 125 °C. In addition, a 1500 V<sub>rms</sub> Hi-Pot rating provides electrical isolation for enhanced safety. The transformers also boast a Moisture Sensitivity Level (MSL) of 1 for unlimited floor life under standard environmental conditions.	28.05.2025 12:30:00	May	news_2025-06-15_14.jpg	\images\news_2025-06-15_14.jpg	https://products.sumida.com/ProductsInfo/QuickSearch/TypeInfo.php?filterType=1&filterText=CEP1311F	sumida.com
Shielded Power Inductors	Bourns introduced the SRP2512CL and SRP3212CL Seri...	12422	Product Release	Shielded Power Inductors	Bourns introduced the SRP2512CL and SRP3212CL Series Shielded Power Inductors that are claimed to feature "low AC Resistance and low DC Resistance, delivering reduced losses and high efficiency." The components were designed to meet the latest DDR5 memory technology specifications such as those in DDR5 Power Management Integrated Circuits (PMIC) and client DDR5 modules in desktop PCs, notebooks and tablets. The devices operate in the temperature range of -40 to +125 °C, and are available with inductance ratings of up to 1.5 µH in 3030 and 2520 package sizes.	27.05.2025 15:30:00	May	news_2025-06-15_17.jpg	\images\news_2025-06-15_17.jpg	https://www.bourns.com/news/press-releases/pr/2025/05/27/bourns-introduces-two-shielded-power-inductor-series-developed-for-ddr5-power-management-integrated-circuits	bourns.com
PCIM booth raises €10,000 for a worthy cause	Vincotech staged a charity benefit at this year's ...	12407	Industry News	PCIM booth raises €10,000 for a worthy cause	Vincotech staged a charity benefit at this year's PCIM Europe trade fair. The company and its partners pledged a donation for every visitor who competed in a virtual reality memory game, raising 10,000 € for a Plan International Germany project in Malawi called "Education Empowers Girls!" Vincotech has made a tradition of hosting engaging charity events at the fair. Activities such as wall climbing, Sudoku, and this latest VR memory challenge – a crowd favorite – attracted hundreds of enthusiastic fairgoers. This year's proceeds go to a Plan International Germany project aiming to improve access to education and outcomes for girls in Malawi's Lilongwe and Kasungu districts. Running from October 2022 to September 2026, the initiative goes to create inclusive, supportive learning environments where girls and boys can realize their full potential. In a statement Vincotech explains why it chose this charity project: "Empowering girls through education changes lives – and not just individuals'; it transforms entire families and communities for generations to come."	26.05.2025 07:00:00	May	news_2025-06-15_2.jpg	\images\news_2025-06-15_2.jpg	https://www.vincotech.com/news/company-news/article/vincotech-pcim-booth-raises-eur10000-for-a-worthy-cause.html	vincotech.com
AI-powered Design Assistant	Frenetic Electronics announced Frenetic AI, an AI-...	12397	Product Release	AI-powered Design Assistant	Frenetic Electronics announced Frenetic AI, an AI-powered assistant that helps engineers design power converters. The company has also announced significant upgrades to Frenetic Magnetic Simulator, its cloud platform that allows engineers to simulate and design high-frequency inductors and transformers up to 95 % accuracy. Frenetic AI designs the converter topology based on user constraints and automatically generates electrical schematics and simulation files (LTspice, PLECS). It also suggests suitable off-the-shelf or custom magnetics. Currently available as a free basic version which has been beta-site tested, Frenetic AI will shortly be additionally offered as a PRO version is coming soon, which will include premium features such as planar transformer design, off-the-shelf component suggestions and additional design insights. Frenetic AI can integrate with Frenetic Magnetic Simulator for advanced magnetic component design, but can also be used as a standalone module. Frenetic Magnetic Simulator has also been upgraded. The original platform delivers advanced modeling of copper and core losses, the superposition of AC signals with high-frequency components and material and core selection based on the application's needs. Latest add-ons include a machine-learning-based model for calculating foil winding losses. The recent version of Frenetic Magnetic Simulator has been trained on 5,000 FEM simulations across many designs, and delivers 12 % median relative error, with millisecond response times.	22.05.2025 07:30:00	May	news_2025-06-01_12.png	\images\news_2025-06-01_12.png	https://www.frenetic.ai/	frenetic.ai
IPCEI ME/CT CONNECT 2025	IPCEI ME/CT CONNECT 2025, being held on June 16 in...	12392	Event News	IPCEI ME/CT CONNECT 2025	IPCEI ME/CT CONNECT 2025, being held on June 16 in Grenoble, France, is a key gathering for project partners, national authorities, and Member States to highlight achievements, share updates, and build new collaborations across Europe's strategic microelectronics and communication landscape. Held in conjunction with the IPCEI on Microelectronics and Communication Technologies, this event aims to strengthen Europe's leadership in secure, sustainable, and sovereign semiconductor-based technologies.	21.05.2025 12:00:00	May	news_2025-06-01_7.png	\images\news_2025-06-01_7.png	https://ipcei-me-ct.eu/news/join-the-ipcei-me-ct-connect-2025/	ipcei-me-ct.eu
12 kW Power Supply Unit Reference Design for AI Data Centers	Navitas Semiconductor has announced a 12 kW power ...	12400	Product Release	12 kW Power Supply Unit Reference Design for AI Data Centers	Navitas Semiconductor has announced a 12 kW power supply unit (PSU) "designed for production" reference design for hyperscale AI data centers with high-power rack densities of 120 kW achieving 97.8 % Efficiency. The 12 kW PSU complies with ORv3 specifications and OCP guidelines. It utilizes Gen-3 Fast SiC MOSFETs, an "IntelliWeave" digital platform, and high-power GaNSafe ICs configured in 3-phase interleaved TP-PFC and FB-LLC topologies. The 3-Phase interleaved totem-pole power factor correction (TP-PFC) is powered by Gen-3 Fast SiC MOSFETs with trench-assisted planar technology. IntelliWeave™ digital control provides a hybrid control strategy of both Critical Conduction Mode and Continuous Conduction Mode, for light-load to full-load conditions, ensuring maximum efficiency while maintaining a simplistic design with low component count. This results in a "30% reduction in power losses compared to existing Continuous Conduction Mode solutions". The 3-phase interleaved full-bridge LLC topology is enabled by 4<sup>th</sup> generation high-power GaNSafe™ ICs, integrating control, drive, sensing, and critical protection features that allow unprecedented reliability and robustness. GaNSafe is claimed to be "the world's safest GaN with short-circuit protection" (350 ns maximum latency), 2 kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with four pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of R<sub>DS(ON)typ.</sub> from 18 to 70 mΩ.	21.05.2025 10:30:00	May	news_2025-06-01_15.jpg	\images\news_2025-06-01_15.jpg	https://navitassemi.com/navitas-launches-industry-leading-12kw-gan-sic-platform-achieving-97-8-efficiency-for-hyperscale-ai-data-centers/	navitassemi.com
Semiconductor Collaboration on Next Generation 800 V HVDC Architecture	Navitas Semiconductor announced a collaboration wi...	12410	Industry News	Semiconductor Collaboration on Next Generation 800 V HVDC Architecture	Navitas Semiconductor announced a collaboration with NVIDIA on their next-generation 800 V HVDC architecture to support 'Kyber' rack-scale systems powering their GPUs, such as Rubin Ultra, enabled by GaNFast™ and GeneSiC™ power technologies. NVIDIA's next generation of 800 V DC architecture aims to establish high-efficiency, scalable power delivery for next-generation AI workloads, to ensure greater reliability, efficiency, and reduced infrastructure complexity. Today's existing data center architecture uses traditional 54 V in-rack power distribution and is limited to a few hundred kW. As power increases above 200 kW, this architecture runs into physical limits due to power density, copper requirements, and reduced system efficiency. Modern AI data centers require gigawatts (GW) of power for the increasing demand for AI computation. Nvidia's approach is to directly convert the 13.8 kV AC grid power to 800 V HVDC at the data center perimeter using solid state transformers (SST) and industrial-grade rectifiers, eliminating several AC/DC and DC/DC conversion steps, maximizing efficiency and reliability. Due to the higher voltage level of 800 V HVDC, the thickness of copper wires can be reduced by up to 45%. The 800 V HVDC directly powers the IT racks (eliminating the need for additional AC/DC converters) and is converted by DC/DC converters to lower voltages, which will drive GPUs. NVIDIA's 800V HVDC architecture is expected to improve end-to-end power efficiency up to 5%, reduce maintenance costs by 70% (due to fewer PSU failures), and lower cooling costs by directly connecting HVDC to the IT and compute racks.	21.05.2025 10:00:00	May	news_2025-06-15_5.png	\images\news_2025-06-15_5.png	https://navitassemi.com/navitas-developing-next-generation-800-v-hvdc-architecture-with-nvidia/	navitassemi.com
LTspice Models for ESD Products	Würth Elektronik, in cooperation with the Institut...	12389	Industry News	LTspice Models for ESD Products	Würth Elektronik, in cooperation with the Institute of Electronics (IFE) at Graz University of Technology, now offers an LTspice model for its TVS diodes and ESD suppressors for ESD protection, based on real measurement data using TLP (Transmission Line Pulsing). This enables the actual behavior of the components to be measured under electrostatic discharge (ESD) conditions. The ready-to-use simulation files facilitate integration into SPICE-based analyses and help shorten design cycles and time-to-market. Conventional models of components for ESD protection typically rely on simplified approximations. The new models developed by Würth Elektronik and the IFE at Graz University of Technology, based on measurement data, however, reflect the actual transient properties, including snapback behavior. The snapback effect allows the voltage to be clamped to a lower level after a transient overvoltage than is possible with standard PN diodes. This is a key aspect of ESD protection, as it reduces both the overvoltage and the resulting thermal stress on sensitive electronic components, so the ability to simulate it is a critical improvement to the development process. LTspice models for realistic modelling of real component behavior during ESD events for products from the WE-TVS and WE-VE product series are now available to download.	21.05.2025 09:00:00	May	news_2025-06-01_4.jpg	\images\news_2025-06-01_4.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=ESD-Diodemodel	we-online.com
650 V SiC MOSFETs	Toshiba Electronics Europe announces volume shipme...	12404	Product Release	650 V SiC MOSFETs	Toshiba Electronics Europe announces volume shipments of its 3rd generation, 650 V silicon carbide MOSFETs in the compact DFN8x8 package for industrial equipment, the TW031V65C, TW054V65C, TW092V65C, and TW123V65C. An important characteristic of Toshiba's next-generation process is the consistently low R<sub>DS(on)</sub> temperature coefficient of the devices. The R<sub>DS(on)</sub> x gate-drain charge (Q<sub>gd</sub>) figure of merit (FoM), therefore, enables engineers to enhance the power density and efficiency of numerous high-voltage applications, including switched-mode power supplies (SMPSs), electric vehicle (EV) charging stations, uninterruptible power supplies (UPS), and photovoltaic (PV) inverters. The surface-mount DFN8x8 package reduces volume by more than 90 % compared to existing lead-inserted packages, such as TO-247 and TO-247-4L(X). Furthermore, the multi-pin device allows a Kelvin connection of its signal-source pin for the gate drive.	20.05.2025 14:30:00	May	news_2025-06-01_19.jpg	\images\news_2025-06-01_19.jpg	https://toshiba.semicon-storage.com/eu/company/news/2025/05/mosfet-20250520-1.html	toshiba.semicon-storage.com
APEC 2026: Call for Papers	APEC 2026 will take place March 22 – 26, 2026 at t...	12388	Event News	APEC 2026: Call for Papers	APEC 2026 will take place March 22 – 26, 2026 at the Henry B. Gonzalez Convention Center in San Antonio, Texas/USA, and now the call for Technical Session Papers has started. APEC 2026 offers an expanded window for digest and final manuscript submissions, making it easier to participate. According to the organizer, "submitting your work is a strategic investment in your professional future - contribute to the evolution of power electronics, engage with a dynamic and influential community, and make a lasting impact". According to the submission requirements engineers have to review the list of topics when planning their digest in order to ensure that the work is original, not previously published, and include evidence of completed experimental work. The principal criteria in selecting digests will be the usefulness of the work to the practicing power electronic professional. Reviewers value evidence of completed experimental work. Authors should obtain any necessary company and governmental clearance prior to submission of digests. Once Accepted, a detailed letter will be sent to all accepted submissions. The deadline for digest submissions is August 15, 2025, while final manuscripts and author registrations are due December 8, 2025.	20.05.2025 08:00:00	May	news_2025-06-01_3.png	\images\news_2025-06-01_3.png	https://apec-conf.org/speakers/ts-author-info/	apec-conf.org
IEDM 2025 Paper Submission Deadline in July	The 71st annual IEEE International Electron Device...	12390	Event News	IEDM 2025 Paper Submission Deadline in July	The 71st annual IEEE International Electron Devices Meeting (IEDM) is scheduled for December 6 - 10, 2025 in San Francisco, with on-demand access to recorded content after the event. Paper submission deadline is July 10, 2025. Authors are asked to submit four-page papers electronically in IEEE Xplore-compatible PDF format and the accepted papers will be published as-is in the proceedings. Late-news papers covering the most recent, most noteworthy developments also will be accepted, with a submission deadline of August 18, 2025. IEDM 2025 will feature special Focus Sessions on "Efficient AI solutions", "Beyond Silicon: The Invisible Revolution in Thin-Film Transistors", "From P-bits to Qubits" and "Silicon Photonics for Energy Efficient AI Computing". Papers written by students as the lead author based on their own work will be considered for the Best Student Paper Award. Papers must be identified as student papers at time of submission, and the presentation must be given by the student to be eligible. The award is chosen based on both paper and presentation, and winner is announced and presented after IEDM.	19.05.2025 10:00:00	May	news_2025-06-01_5.jpg	\images\news_2025-06-01_5.jpg	https://www.ieee-iedm.org/	ieee-iedm.org
CIPS 2026: Call for Papers	CIPS, the "International Conference on Integrated ...	12386	Event News	CIPS 2026: Call for Papers	CIPS, the "International Conference on Integrated Power Electronics Systems" will take place March 10-12, 2026 in Dresden/Germany, and the organizers describe the basic framework as follows: In the next decades, power electronic system development will be driven by energy saving systems, intelligent energy management, power quality, system miniaturisation and high reliability. Monolithic and hybrid system integration will comprise advanced device concepts including wide bandgap devices, new packaging technologies and the overall integration of actuators/drives (mechatronic integration). Consequently, CIPS is focused on the three main aspects: Assembly and interconnect technology for power electronic devices and converters. The second aspect is the integration of hybrid systems and mechatronic systems with high power density, and the third aspect is the systems' and components' operational behaviour, reliability and availability. Basic technologies for integrated power electronic systems as well as upcoming important applications will be presented in interdisciplinary invited papers. Experts from industry, research institutes and universities wishing to present results of their recent research are cordially invited to submit a paper by September 29, 2025. Applications are wide spread over areas such as power supplies and drives to feed all kinds of loads like consumer electronics, industrial equipment, data centres etc. Applications are e. g. from the grid or to feed electrical energy from solar or wind generators to the grid but also in the transportation sector like railway, automotive and aircraft. The organizers explicitly encourage to "submit your contribution even if you can not find the appropriate topic for your contribution. All interesting contributions are welcome!"	19.05.2025 06:00:00	May	news_2025-06-01_1.png	\images\news_2025-06-01_1.png	https://www.cips.eu/en	cips.eu
Technology Center in the "Indian Silicon Valley"	Following the establishment of a sales office in C...	12387	Industry News	Technology Center in the "Indian Silicon Valley"	Following the establishment of a sales office in Chennai in 2005 and the opening of a production plant in 2022, Harting has now inaugurated a technology center focusing on research and development in India. The aim is to meet the demand for advanced connector solutions in the region in a customer-oriented manner and to meet the growing requirements in the Asian market. Now, a 7,000 square metre technology center has been officially opened in Bangalore, popularly known as the "Silicon Valley of India". The goal: to offer talented individuals from the technology sector a platform to drive forward the development of connectivity solutions for various industries such as manufacturing, transport and telecommunications. Harting will also offer training and development opportunities to aspiring engineers and technology specialists. In addition to its headquarters in Chennai, Harting India has further sales offices in Bangalore, Pune and Noida.	16.05.2025 07:00:00	May	news_2025-06-01_2.jpg	\images\news_2025-06-01_2.jpg	https://www.harting.com/en-DE/news/harting-opens-new-technology-center-in-the-indian-silicon-valley	harting.com
Coupled Inductor for High-Performance Applications	Würth Elektronik introduces its WE-HCMD (High Curr...	12405	Product Release	Coupled Inductor for High-Performance Applications	Würth Elektronik introduces its WE-HCMD (High Current Multiphase Dual) high-current inductor, specially developed for use in TLVR (Trans-Inductor Voltage Regulator) topologies. This coil with MnZn core is characterized by its high permeability and very low RDC values allowing a high power density and efficiency. When designing power supplies for processors today, developers are confronted with increasingly high and significantly varying load transients – for example, in FPGAs used in AI applications. The innovation in TLVRs in this field calls for a new generation of components that achieve consistent efficiency even at high temperatures. The WE-HCMD family from Würth Elektronik offers coupled inductors with a coupling factor of up to 0.98 and an inductance range from 70 nH to 200 nH. The saturation current goes up to 190 A at a rated current of 78 A. The internal resistance is 0.125 mΩ. The inductor is designed for operating temperatures up to 125 °C. The family of SMT-mountable high-current inductors for TLVR applications includes four versions in a 0910 package and six in a 1111 package.	15.05.2025 15:30:00	May	news_2025-06-01_20.jpg	\images\news_2025-06-01_20.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=WE-HCMD	we-online.com
Early Bird Registration for ECCE Europe 2025 is Now Open	Early Bird Registration for ECCE Europe 2025, bein...	12395	Event News	Early Bird Registration for ECCE Europe 2025 is Now Open	Early Bird Registration for ECCE Europe 2025, being held in Birmingham/UK from August 31 to September 4, is now open. If you're working in power electronics or energy conversion, this is your chance to connect with industry experts, researchers, and thought leaders shaping the field. Learn from renowned experts through keynote addresses, insightful tutorials, and engaging special sessions, while networking and building valuable connections with colleagues from around the world.	15.05.2025 14:00:00	May	news_2025-06-01_10.png	\images\news_2025-06-01_10.png	https://www.ecce-europe.org/2025/registration/rates-and-registration/	ecce-europe.org
Wide Bandgap Power-electronic devices – From characterization to EMC testing	Rohde & Schwarz and dataTec invite you to xperienc...	12393	Event News	Wide Bandgap Power-electronic devices – From characterization to EMC testing	Rohde & Schwarz and dataTec invite you to xperience live demonstrations of how to analyze wide bandgap semiconductors using an oscilloscope and gain valuable insights into selecting the right oscilloscopes and probes. They will also demonstrate how EMC measurements and debugging can be efficiently performed with the oscilloscope, spectrum analyzer, and SCN. This seminar in Reutlingen/Germany on July 1st is aimed at users working with wide-bandgap semiconductors who are planning to purchase an oscilloscope and want to deepen their practical knowledge.	15.05.2025 13:00:00	May	news_2025-06-01_8.png	\images\news_2025-06-01_8.png	https://www.datatec.eu/de/en/rs-seminar	datatec.eu
GaN Half-Bridge Drivers	STMicroelectronics' high-voltage half-bridge gate ...	12420	Product Release	GaN Half-Bridge Drivers	STMicroelectronics' high-voltage half-bridge gate drivers for GaN applications dubbed STDRIVEG610 and STDRIVEG611 give designers two options to manage GaN devices in power conversion and motion applications for greater efficiency, power density and ruggedness in consumer and industrial applications. The STDRIVEG610 addresses applications requiring a fast 300 ns start-up time which is an important parameter for converter topologies like LLC or ACF ensuring accurate controlled turn-off intervals in burst mode. The STDRIVEG611 is tailored for hard switching in motion-control applications with additional protection features like high-side UVLO and smart shut down overcurrent protection. Both devices are suitable for hard-switching and soft-switching topologies with built-in interlocking to prevent cross conduction. The STDRIVEG610 elevates the performance of power adapters, chargers, and power-factor correction (PFC) circuits. The STDRIVEG611 saves space as well as boosting efficiency and reliability in drives for home appliances, pumps and compressors, industrial servo drives, and factory automation. Both devices integrate a high-side bootstrap diode as well as 6 V high-side and low-side linear regulators with a propagation delay matched to within 10 ns. Each driver has a separate sink and source path, with 2.4 A / 1.2 Ω sink and 1.0 A / 3.7 Ω source parameters. The integrated UVLO protection safeguards both the lower and upper 600 V GaN power switches.	14.05.2025 13:30:00	May	news_2025-06-15_15.jpg	\images\news_2025-06-15_15.jpg	https://community.st.com/t5/developer-news/latest-gan-half-bridge-drivers-for-power-conversion-and-motion/ba-p/799812	st.com
Series of Gate Drive Transformers	ITG Electronics has introduced a series of gate dr...	12396	Product Release	Series of Gate Drive Transformers	ITG Electronics has introduced a series of gate drive transformers comprising a range of products for various needs. The company's T201213 Series of Gate Drive Transformers spans lower-current items for general applications – such as a 200 V direct current version – to products offering up to 450 V<sub>DC</sub> for higher-voltage applications. Gate drive transformers are specialized pulse transformers used to deliver high-power, fast-switching signals to the gates of power translators like IGBTs and MOSFETs, while also providing galvanic isolation. Essentially acting as barriers between power translators and controlling drive circuits, gate drive transformers are essential to applications such as power converters and motor drives for efficient and consistent switching. The T201213 Series activates or deactivates switching devices, and provides floating supply and level shifting for switching signals. The series is designed for frequencies from 20 – 300 kHz, and each gate drive transformer in the portfolio meets medical safety isolation requirements.	14.05.2025 06:30:00	May	news_2025-06-01_11.png	\images\news_2025-06-01_11.png	https://itg-electronics.com/en/series/779	itg-electronics.com
EMC Components: Multilayer Chip Beads for 8 A	TDK Corporation has expanded its MPZ1608-PH series...	12402	Product Release	EMC Components: Multilayer Chip Beads for 8 A	TDK Corporation has expanded its MPZ1608-PH series of large-current multilayer chip beads for automotive and commercial power supply lines (1.6 x 0.8 x 0.6 mm³ – L x W x H). These 1608-size chip beads for power supply lines achieve a rated current of 8 A. Chip beads are used as noise suppression components in power and signal circuits. In a circuit with a current of 8 A or more, usually two or more chip beads must be used in parallel. This has the disadvantage that the current is not evenly distributed between the ferrite beads. The MPZ1608-PH series of products halves the component footprint in comparison with circuits using two conventional 1608-sized chip beads. Moreover, the components with a specified operating temperature of up to +125 °C are designed to be used in high-temperature environments like automotive and industrial equipment applications.	13.05.2025 12:30:00	May	news_2025-06-01_17.jpg	\images\news_2025-06-01_17.jpg	https://www.tdk.com/en/news_center/press/20250513_01.html	tdk.com
Semiconductor Partnership with Indian Government	Renesas has started a partnership with the Ministr...	12391	Industry News	Semiconductor Partnership with Indian Government	Renesas has started a partnership with the Ministry of Electronics & Information Technology (MeitY), Government of India, to support local startups and academic institutions in the field of VLSI and embedded semiconductor systems. Renesas also celebrated the expansion of its offices in Bengaluru and Noida to accommodate its growing R&D teams, with inauguration ceremonies held in May 2025. India is a key market for Renesas, offering significant growth potential and access to a highly skilled talent pool. Renesas intends to generate over 10 percent of its global revenue from the Indian market by 2030. Recent collaborations include the OSAT factory project with CG Power and Stars Microelectronics in Gujarat and the MOU with IIT Hyderabad. Renesas is also expanding its operations in India, with plans to increase its headcount to 1,000 by the end of 2025.	13.05.2025 11:00:00	May	news_2025-06-01_6.JPG	\images\news_2025-06-01_6.JPG	https://www.renesas.com/en/about/newsroom/renesas-partners-indian-government-drive-innovation-through-startups-and-industry-academia	renesas.com
SMD Fuse with 1500 A Interrupting Rating	Littelfuse launched the Nano²<sup>®</sup>...	12417	Product Release	SMD Fuse with 1500 A Interrupting Rating	Littelfuse launched the Nano²<sup>®</sup> 415 SMD Series Fuse, the first surface-mount fuse from Littelfuse with a 1500 A interrupting rating at 277 V. Designed to provide true buffering for 250 V applications with unpredictable voltage fluctuations, the 415 Series offers fault current protection in a compact SMD package, making it ideal for space-constrained applications. The Nano² 415 SMD Series is well-suited for a range of applications, including consumer electronics like power adapters, chargers, and power supplies, industrial systems like inverters, converters, and instrumentation, automotive like EV charging stations, home chargers, and lighting, appliances/white goods like washers, dryers, and refrigerators as well as home automation like automated garage doors and smart home systems.	13.05.2025 10:30:00	May	news_2025-06-15_12.png	\images\news_2025-06-15_12.png	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-introduces-industry-first-nano2-415-smd-fuse-with-1500a-interrupting-rating-at-277v	littelfuse.com
Multiphase Power Controller	Alpha and Omega Semiconductor (AOS) announced its ...	12414	Product Release	Multiphase Power Controller	Alpha and Omega Semiconductor (AOS) announced its AOZ98252QI 2-output, 8-phase controller with 2.5 mA quiescent power. Featuring AMD SVI3 high-speed and SMBus digital interfaces, the AOZ98252QI is engineered as a key component in a complete system power solution with AOS' DrMOS products for graphics and desktop systems. The AOZ98252QI digital controller provides two output rails in flexible 8+0 to 4+4 GFX/SOC and Vcore/SOC output rails. Using the A²TM (Advanced Transient Modulator) feature, designers can achieve fast response times and adequate current balance for transient and DC loads. The device is shipped in a QFN 6x6-52L package.	13.05.2025 07:30:00	May	news_2025-06-15_9.jpg	\images\news_2025-06-15_9.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductor-introduces-amd-svi3-multiphase-controller-low-quiescent-power	aosmd.com
Collaboration to support Battery Energy Storage System Platform	Arrow Electronics, in collaboration with Prime Bat...	12406	Industry News	Collaboration to support Battery Energy Storage System Platform	Arrow Electronics, in collaboration with Prime Batteries and NXP Semiconductors, is launching a next-generation Battery Energy Storage System (BESS) platform. Prime Batteries developed this solution with support from Arrow and NXP to advance energy industry and energy-saving technologies, addressing the increasing global demand for greater efficiency. By leveraging their combined strengths, the companies aim to establish new benchmarks in energy-saving technology and make a substantial impact across industries. According to Arrow the solution complies with the latest European safety regulations and "achieves unprecedented levels of energy storage capacity, making it ideal for a variety of BESS applications". The platform's versatility allows it to cater to different customer needs, with adjustable voltage and current parameters. It supports high voltages up to 1500 V, in-line with current market trends for high-power equipment, and meets rigorous safety standards for critical applications, including ISO 26262, with the potential for ASIL D certification, if necessary. The system features multiple protection layers and continuous, independent cell monitoring. Designed with scalability and upgradability in mind, the BESS can meet the changing requirements of customers. Its low maintenance needs and optimized operating conditions extend its lifespan, thereby reducing the total cost of ownership. In this context NXP's 1500 V Battery Energy Storage System provides a modular and scalable reference design for utility, commercial, industrial and residential high-voltage applications.	13.05.2025 06:00:00	May	news_2025-06-15_1.jpg	\images\news_2025-06-15_1.jpg	https://news.fiveyearsout.com/news-releases/news-details/2025/Arrow-Electronics-and-NXP-Semiconductors-Collaborate-to-Support-Prime-Batteries-Advanced-Battery-Energy-Storage-System-Platform/default.aspx	arrow.com
Collaboration on Power Conversion Systems for Electric Vehicles	Infineon Technologies and Visteon announced the co...	12375	Industry News	Collaboration on Power Conversion Systems for Electric Vehicles	Infineon Technologies and Visteon announced the companies have signed a Memorandum of Understanding (MOU) to advance the development of next-generation electric vehicle powertrains. In this joint effort, Infineon and Visteon will collaborate and integrate power conversion devices based on Infineon semiconductors, with particular emphasis on wideband gap device technologies, which provide significant advantages in power conversion applications compared to silicon-based semiconductors. These devices include greater power density, efficiency and thermal performance, which contribute to improved efficiency and reduced system costs for next-generation power conversion modules for the automotive sector. Future Visteon EV powertrain applications incorporating Infineon CoolGaN™ (Gallium Nitride) and CoolSiC™ (Silicon Carbide) devices may include battery junction boxes, DC-DC converters and on-board chargers. The resulting powertrain systems will conform to the highest efficiency, robustness and reliability. "Working with Infineon allows us to integrate cutting-edge semiconductor technologies that are essential in improving power conversion efficiency and overall system capability of next generation electric vehicles," said Dr. Tao Wang, Head of the Electrification Product Line of Visteon Corporation. "This collaboration will advance technologies that accelerate the transition to a more sustainable and efficient mobility ecosystem."	09.05.2025 11:00:00	May	news_2025-05-15_6.jpg	\images\news_2025-05-15_6.jpg	https://www.visteon.com/investors/investor-news/news-details/2025/Infineon-and-Visteon-Collaborate-on-Advanced-Power-Conversion-Systems-for-Next-Generation-Electric-Vehicles-2025-5Dbe3Pylmd/default.aspx	visteon.com
German Government issues final Funding Approval for new Smart Power Fab in Dresden	Infineon Technologies has received final approval ...	12373	Industry News	German Government issues final Funding Approval for new Smart Power Fab in Dresden	Infineon Technologies has received final approval for the funding of its new plant in Dresden (Smart Power Fab) from the German Federal Ministry for Economic Affairs. Infineon is expanding the site in order to meet customer demand for example for renewable energies, efficient data centers and electromobility. Infineon will invest five billion euros of its own money, creating as many as 1,000 new jobs. This figure does not include additional jobs which will be generated in the investment's ecosystem: Experts expect a positive job effect of 1:6 (Source: ZVEI-Studie). In addition, Infineon is also investing in Dresden through its participation in the joint venture "European Semiconductor Manufacturing Company (ESMC) GmbH". Infineon's Smart Power Fab not only helps strengthen European supply chains in the microelectronics sector, it also further solidifies the position of Dresden and Silicon Saxony as Europe's largest semiconductor hub. The European Commission approved the funding by the German federal government. The Smart Power Fab is being supported by both the European Chips Act and the IPCEI ME/CT innovation program ("Important Project of Common European Interest on Microelectronics and Communication Technologies"). Overall funding for the site from these sources totals approximately one billion euros. Construction of the Smart Power Fab, currently one of Germany's largest building projects, is proceeding as planned, with the building shell currently nearing completion. Infineon held a topping-out ceremony together with all those involved in construction activities in early April this year. Production is to begin in 2026.	08.05.2025 09:00:00	May	news_2025-05-15_4.jpg	\images\news_2025-05-15_4.jpg	https://www.infineon.com/cms/en/about-infineon/press/press-releases/2025/INFXX202505-100.html	infineon.com
Test Generator for up to 2 kA	The Microtest Group introduced the M2 DS5 Quasar, ...	12398	Product Release	Test Generator for up to 2 kA	The Microtest Group introduced the M2 DS5 Quasar, "the smallest 2 kA low inductance dynamic switch test generator, for the test of all types of products on one platform". The tester is suited for high-volume semiconductor production. The M2 DS5 Quasar is designed to test power chips, and the latest WBG (Wide-bandgap) devices made from Silicon Carbide and Gallium Nitride, materials commonly found in consumer power supplies, electric vehicles including trains and battery electric hybrid, industrial motors, HVAC systems and many other applications in the green energy, automotive, power markets, as well as rad-hard (radiation-hardened) devices for space and defence. The tester was developed by the UK subsidiary ipTEST. It is eight times more efficient in overcurrent protection, with a typical response time of under 300 ns. The parasitic inductance has also been reduced by 85 % to 30 nH.	08.05.2025 08:30:00	May	news_2025-06-01_13.png	\images\news_2025-06-01_13.png	https://www.microtest.net/microelectronics-microtest-group-launches-a-one-platform-test-generator-suitable-for-rad-hard-devices/	microtest.net
Gallium: From Mining towards the Fab	Indium Corporation and Rio Tinto have successfully...	12394	Industry News	Gallium: From Mining towards the Fab	Indium Corporation and Rio Tinto have successfully extracted gallium from feed sourced at Rio Tinto's Vaudreuil alumina refinery in Saguenay, Quebec/Canada. This collaboration is a step in building a more robust global supply chain for gallium. A strategic North American supply will accelerate the development of the project towards commercialization of gallium-based technologies. Indium Corporation designed and developed this gallium extraction process in the United States at its research and development facility in Rome, New York state. Indium Corporation works towards establishing a 3.5-ton demonstration plant which would be located in Saguenay, Quebec, which might then eventually complemented by a commercial-scale capacity of 40 tons annually, addressing an estimated five to 10 percent of global gallium supply.	07.05.2025 15:00:00	May	news_2025-06-01_9.jpg	\images\news_2025-06-01_9.jpg	https://www.indium.com/blog/indium-corporation-and-rio-tinto-announce-groundbreaking-milestone-in-gallium-extraction-partnership/	indium.com
"The world's lowest Temperature 65-70 W USB-C Modules for installed Applications"	Pulsive released of a series of 65 W-70 W USB-C mo...	12384	Product Release	"The world's lowest Temperature 65-70 W USB-C Modules for installed Applications"	Pulsive released of a series of 65 W-70 W USB-C modules. Aimed at installed applications such as wall sockets, desks, and furniture, these fully assembled modules achieve "the world's lowest operating temperature of just 32 °C above ambient with an industry leading efficiency of 97.34 %". USB-C charging in wall sockets, desks, and furniture typically offer power levels of 15-30 W and often struggle to handle multiple devices and/or fast charging. Limitations on physical size and natural airflow cause higher power solutions at 45 W-65 W to reach temperature levels in excess of 80 °C above ambient causing the power supply to either reduce the power to 15 W, or in many cases, cut off altogether. Pulsiv's fully assembled USB-C modules have solved all the challenges relating to heat, size and safety, making it "the only suitable solution for installed applications". It combines Pulsiv OSMIUM optimized PFC technology with an industry standard QR flyback to safely deliver 65 W or 70 W (MacBook compatible). Available in a compact cube or flat module form factor, this GaN-optimised design can operate continuously for more than 8 hours at 100 % load and never exceed 32 °C above ambient. Furthermore, due to its switching method, there is zero inrush current – eliminating the problems caused by power outages where multiple USB-C wall sockets have been installed in a single location. The dimensions of the module, which is switched at 125 kHz, are 36 mm x 36 mm x 40 mm (cube) or 55 mm x 37 mm x 25 mm (flat).	06.05.2025 14:30:00	May	news_2025-05-15_15.jpg	\images\news_2025-05-15_15.jpg	https://www.pulsiv.com/	pulsiv.com
1700 V Switcher IC for 800 V BEVs	Power Integrations announced five new reference de...	12403	Product Release	1700 V Switcher IC for 800 V BEVs	Power Integrations announced five new reference designs targeting 800 V automotive applications based on the company's 1700 V InnoSwitch™3-AQ flyback switcher ICs. Spanning power levels from 16 W to 120 W, the designs leverage both wound and low-profile planar transformers and target automotive applications such as DC/DC bus conversion, inverter emergency power, battery management and power supplies for auxiliary systems. The designs feature Power Integrations' wide-creepage InSOP™-28G package, which supports 1000 V<sub>DC</sub> on the primary side while providing appropriate creepage and clearance between pins in pollution degree 2 environments. Power consumption is less than 15 mW at no-load. The ICs also incorporate synchronous rectification and a valley switching, discontinuous/continuous conduction mode (DCM/CCM) flyback controller capable of delivering greater than 91 % efficiency. The company provides three reference designs, which are all isolated flyback converters based on the 1700 V-rated CV/CC InnoSwitch3-AQ switcher ICs. The three reference designs kits (RDKs) and two design example reports (DERs) are RDK-994Q (35 W ultra-low-profile traction inverter gate-drive or emergency power supply with 40-1000 V<sub>DC</sub> input and 24 V output), RDK-1039Q (18 W power supply with planar transformer for traction inverter gate driver or emergency power supply), RDK-1054Q (120 W power supply with planar transformer, designed to shrink or eliminate heavy, bulky 12 V batteries), DER-1030Q (20 W four-output power supply) and DER-1045Q (16 W four-output power supply).	06.05.2025 13:30:00	May	news_2025-06-01_18.jpg	\images\news_2025-06-01_18.jpg	https://investors.power.com/news/news-details/2025/Power-Integrations-1700-V-Switcher-IC-Delivers-Reliability-and-Space-Saving-Benefits-in-800-V-BEVs/default.aspx	power.com
GaN-based 2.5 kW Totem Pole PFC Case Study	Cambridge GaN Devices (CGD) announced that Inventc...	12383	Product Release	GaN-based 2.5 kW Totem Pole PFC Case Study	Cambridge GaN Devices (CGD) announced that Inventchip has successfully demo'd a 2.5 kW GaN-based CCM totem-pole PFC reference design using CGD's ICeGaN® gallium nitride ICs. A key feature is ease-of use. ICeGaN ICs integrate interface circuitry and protection on the same GaN die as the HEMT. Therefore, any standard driver IC can be used. The Inventchip IVCC1104 totem pole PFC controller IC does not require any programming. It offers AC zero-crossing control and robustness against AC disturbance. Inventchip had an existing 2.5 kW TPPFC reference design based on its controller and gate drivers using SiC MOSFETs in TO-247 packages. To evaluate the performance of GaN instead, Inventchip designed a TO-247 adapter board using CGD's P2 25 mΩ ICeGaN ICs and the ICeGaN design works without any modification of their circuits. Soon, EV inverter drives of over 100 kW are expected to transition to GaN too.	06.05.2025 13:30:00	May	news_2025-05-15_14.JPG	\images\news_2025-05-15_14.JPG	https://www.camgandevices.com/en/p/2.5kw-totem-pole-pfc-case-study-demos-icegan-ease-of-use-and-robustness-at-higher-power	camgandevices.com
1200 V SiC MOSFET with Top-Side Cooling and Isolated Thermal Path	SemiQ has announced the expansion of its Gen3 SiC ...	12382	Product Release	1200 V SiC MOSFET with Top-Side Cooling and Isolated Thermal Path	SemiQ has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27 and 101 A and pulsed drain current from 70 to 350 A, with device resistances R<sub>DS(on)</sub> ranging from 80 to 16 mΩ, respectively. All devices are operational to 175 °C and have been tested to voltages greater than 1400 V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800 mJ (R<sub>DS(on)</sub> = 16 mΩ, 160 mJ for the 80 mΩ device). The devices can be used in parallel and implement top-side cooling as well as an isolated thermal path with a ceramic isolated back paddle. The package includes a driver source kelvin pin for gate driving as well as a gate pin, 5 source pins and a drain tab. The TSPAK MOSFETs offer a lower capacitance, reduced switching losses, longer clearance distance and higher overall system efficiency. SemiQ is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and on-board chargers, motor drives, high-voltage DC/DC converters and UPS/switch mode power supplies. All devices in the series are housed in a 18.6 x 14.0 x 3.5 mm³ TSPAK package, have a zero gate voltage drain current of 0.1 µA, a -10/10 nA gate-source leakage current and a 3.5 V gate threshold voltage (cited characteristics measured at 25 °C). The series' cycle times range from 49 ns (80 mΩ MOSFET) to 114 ns (16 mΩ), and the devices have total switching energy of between 153 µJ (80 mΩ MOSFET) and 1565 µJ (16 mΩ).	06.05.2025 12:30:00	May	news_2025-05-15_13.jpg	\images\news_2025-05-15_13.jpg	https://semiq.com/	semiq.com
Enhanced Thermal Performance Package Technology	WeEn Semiconductors has introduced SiC MOSFETs and...	12401	Product Release	Enhanced Thermal Performance Package Technology	WeEn Semiconductors has introduced SiC MOSFETs and Schottky Barrier Diodes (SBDs) in thermally efficient TSPAK packages. These packages will enable engineers to improve efficiency, reduce form factors, extend reliability and lower EMI across a variety of high-power applications. Providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate, the company's top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16 % compared to conventional devices. As a result, the packages help to simplify thermal management design, lower losses and increase power density. EMI reduction derives from the fact that the circulating current that creates the magnetic field is no longer blocked by the thermal vias necessary in conventional bottom-side cooling designs and can return to the source directly, minimizing magnetic interference. WeEn's TSPAK SiC technologies are suited to on-board chargers and high-voltage-to-low-voltage DC/DC converters in electric vehicles, automotive HVAC compressors, vehicle charging stations, photovoltaic renewable energy systems and power supplies for computing and telecom servers. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance ratings from 20 to 150 mΩ. TSPAK SBDs are available with voltages from 650 V to 1200 V and current ratings of 10 A to 40 A.	06.05.2025 11:30:00	May	news_2025-06-01_16.jpg	\images\news_2025-06-01_16.jpg	https://www.ween-semi.com/en	ween-semi.com
40 V GaN Power Transistor targets Low-Voltage Silicon Strongholds	Efficient Power Conversion (EPC) announces the ava...	12381	Product Release	40 V GaN Power Transistor targets Low-Voltage Silicon Strongholds	Efficient Power Conversion (EPC) announces the availability of the EPC2366, a 40 V, 0.8 m&ohm; device designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC/DC converters and synchronous rectifiers. With an R<sub>DS(on)</sub> x Q<sub>G</sub> figure of merit (10 m&ohm;·nC), zero reverse recovery, and its thermal performance, the EPC2366 delivers higher efficiency, faster switching, and greater power density than a comparable silicon-based solution. The device is integrated in a 3.3 mm x 2.6 mm PQFN package. The EPC2366 enables higher frequency operation and reduced system size for high density 48 V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24 V battery powered motor drives.	06.05.2025 11:30:00	May	news_2025-05-15_12.jpg	\images\news_2025-05-15_12.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3213/new-40-v-gan-power-transistor-from-epc-targets-low-voltage-silicon-strongholds	epc-co.com
Self-Biasing GaN Flyback Converter	Texas Instruments now offers a 65 W dual-port USB ...	12380	Product Release	Self-Biasing GaN Flyback Converter	Texas Instruments now offers a 65 W dual-port USB PD charger with self-biasing GaN flyback: The UCG28826 is claimed to be "the industry's first self-biasing GaN flyback converter". Designed for next-generation fast-charging applications, the UCG28826 converter delivers 65 W across 90 V<sub>AC</sub> to 264 V<sub>AC</sub> in this reference design, enabling engineers to meet strict efficiency standards, minimize standby power consumption and increase power density.	06.05.2025 10:30:00	May	news_2025-05-15_11.jpg	\images\news_2025-05-15_11.jpg	https://www.ti.com/about-ti/newsroom/news-releases/2025/ti-advances-power-density-and-efficiency-at-pcim-2025.html	ti.com
SiC Superjunction Technology	Infineon Technologies has introduced a trench-base...	12399	Product Release	SiC Superjunction Technology	Infineon Technologies has introduced a trench-based SiC superjunction (TSJ) technology concept. This expansion will encompass a diverse range of package types, including discretes, molded and frame-based modules, as well as bare dies – for a broad spectrum of applications, targeting both the automotive and industrial sectors. The first products based on the new technology will be 1200 V in Infineon ID-PAK for automotive traction inverters and combine the advantages of trench technology and superjunction design. This scalable package platform supports power levels of up to 800 kW, enabling system flexibility. Key benefits of the technology include increased power density, achieved through an up to 40 percent improvement in R<sub>DS(on)</sub>* A, allowing for more compact designs within a given power class. Additionally, the 1200 V SiC trench-superjunction concept in ID-PAK enables up to 25 percent higher current capability in main inverters without compromising short-circuit capability. As an early customer, Hyundai Motor Company development teams will use the trench-superjunction technology in electrical vehicle drivetrains.	06.05.2025 09:30:00	May	news_2025-06-01_14.jpg	\images\news_2025-06-01_14.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFGIP202505-097.html	infineon.com
Power Switch Architecture for 10 MW and more	Menlo Microsystems has announced a scalable power ...	12379	Product Release	Power Switch Architecture for 10 MW and more	Menlo Microsystems has announced a scalable power switching architecture that enables its Ideal Switch® to be deployed in advanced power distribution and control systems to 10 MW and beyond. The demonstration system, which was shown at PCIM, is based on the MM9200, a 300 V, 10 A MEMS switch. It utilizes Menlo's Ideal Switch technology to provide an ultra-low on-resistance, metal-on-metal contact to eliminate wasted power. The MM9200 is a high-power SPST micro-electromechanical relay that is smaller, more efficient and has higher performance than equivalent solid-state relay (SSR) and electro-mechanical relay (EMR) alternatives. Arrays of MM9200 switches are configured for microsecond speed protection in 1000 V / 125 A modules. Four modules are combined into hot-swapable systems, and multiple systems are deployed in parallel to scale to accommodate higher power requirements. Unlike other solutions, the negligible power dissipation of the Ideal Switch removes the need for design compromises to accommodate heat management while simultaneously enabling power management and control systems to be constructed in a fraction of the space.	06.05.2025 09:30:00	May	news_2025-05-15_10.jpg	\images\news_2025-05-15_10.jpg	https://menlomicro.com/	menlomicro.com
General-Purpose Power Supplies Series	TDK has introduced the TDK-Lambda brand GUS350 ser...	12413	Product Release	General-Purpose Power Supplies Series	TDK has introduced the TDK-Lambda brand GUS350 series of compact, single output general-purpose power supplies. The models are rated at 350 W with 12, 24, 36 and 48 V outputs. The GUS350 is convection-cooled and is available with output voltage adjustment function, remote on-off, and DIN-rail mounting bracket options. The GUS350 series provides an alternative source of power for manufacturers who require a higher grade of construction. The GUS350 models measure 101.6 x 41 x 127 mm³ (W x H x D) and have an operating temperature from -20 to +70 °C, with a three-year warranty. Efficiencies are up to 95.5%. Safety certifications include IEC/EN/UL/CSA62368-1 (compliant to IEC61010-1) as well as CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN 55011-B and EN 55032-B conducted and radiated emissions standards and meet EN 61000-3-2 harmonics and IEC 61000-4 immunity standards. The GUS350 series meets IEC 62477-1 (OVC III) and has input-to-output isolation of 2,000 V<sub>DC</sub>, input-to-ground 3,000 V<sub>DC</sub>, and output-to-ground 500 V<sub>DC</sub>. Main applications are light industrial, automation, ATE test systems, LED lighting and broadcast.	06.05.2025 06:30:00	May	news_2025-06-15_8.jpg	\images\news_2025-06-15_8.jpg	https://www.emea.lambda.tdk.com/uk/news/article/20847	lambda.tdk.com
Joint Development of Traction SiC Inverters for E-Mobility	Cissoid and EDAG Group have started a strategic pa...	12370	Industry News	Joint Development of Traction SiC Inverters for E-Mobility	Cissoid and EDAG Group have started a strategic partnership aimed at accelerating the development of next-generation Silicon Carbide traction inverters for electric mobility applications. This collaboration brings together Cissoid's expertise in SiC power semiconductor modules and control solutions with EDAG's engineering know-how in the design, integration, and validation of electric powertrains. By combining their complementary strengths, the two companies aim to offer e-mobility OEMs and equipment suppliers "unmatched technical support and complete solutions for the efficient, reliable, and functionally safe development of SiC-based traction inverters". Special emphasis will be set to "comprehensive engineering services covering inverter system design, thermal management, mechanical integration, functional safety and EMC compliance" in order to enable "accelerated time-to-market through access to ready-to-implement, proven hardware and software solutions". All this is planned to be with "end-to-end technical support, from concept design to prototyping and vehicle integration".	06.05.2025 06:00:00	May	news_2025-05-15_1.jpg	\images\news_2025-05-15_1.jpg	https://www.cissoid.com/news/cissoid-edag-group-join-forces-to-support-the-development-of-sic-inverters-32	cissoid.com
Inverter Control Modules achieve ISO26262 ASIL-C Ready Certification	Cissoid announced that its CxT-ICM3S series of Inv...	12415	Product Release	Inverter Control Modules achieve ISO26262 ASIL-C Ready Certification	Cissoid announced that its CxT-ICM3S series of Inverter Control Modules (ICMs) have been successfully certified by SGS-TÜV Saar for functional safety, achieving ISO26262 ASIL-C Ready status. This certification underscores Cissoid's commitment to delivering unique, functionally safe and highly customizable solutions that bridge the gap between discrete hardware components and off-the-shelf inverters, enabling optimized power electronics design for electric vehicles and industrial applications. These ICMs are pre-qualified, functionally safe solution that combines the efficiency of off-the-shelf systems with the customizability of discrete hardware components. This best-of-both-worlds approach enables manufacturers to tailor their inverter designs to specific voltage, power, and motor control requirements - accelerating development while ensuring safety and performance. They offer hardware and software flexibility to adapt to specific motor, voltage, and power requirements. For example, the CXT-ICM3SA Series of 3-Phase SiC ICMs provides field-proven inverter control technology with customizable hardware interfaces allowing developers to fine-tune their inverters to maximize efficiency and reliability while ensuring compliance with strict safety standards.	05.05.2025 08:30:00	May	news_2025-06-15_10.jpg	\images\news_2025-06-15_10.jpg	https://www.cissoid.com/news/cissoids-inverter-control-modules-achieve-iso26262-asil-c-ready-certification-33	cissoid.com
JFET Technology for smarter and faster Solid-State Power Distribution	To enable the next generation of solid-state power...	12378	Product Release	JFET Technology for smarter and faster Solid-State Power Distribution	To enable the next generation of solid-state power distribution systems, Infineon introduced its CoolSiC™ JFET product family. These devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them well-suited for solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and overvoltage control, CoolSiC JFETs can be used in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches. The first generation of CoolSiC JFETs features an R<sub>DS(ON)</sub> starting at 1.5 mΩ (750 V <sub>BDss</sub>) and 2.3 mΩ (1200 V <sub>BDss</sub>), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions. Housed in a Q-DPAK top-side cooled package, the devices support paralleling and scalable current handling, enabling high-power systems with several layout and integration options. Their predictable switching behavior under thermal stress, overload and fault conditions increases long-term reliability in continuous operation. To meet the thermal and mechanical challenges of harsh application environments, CoolSiC JFETs leverage Infineon's.XT interconnection technology with diffusion soldering. This improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems. Tested and qualified under real-world operating conditions of solid-state power switches and based on the industry-standard Q-DPAK package, the devices enable quick and seamless design integration in both industrial and automotive applications.	05.05.2025 08:30:00	May	news_2025-05-15_9.jpg	\images\news_2025-05-15_9.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFGIP202505-096.html	infineon.com
Automotive-qualified 1200 V SiC MOSFETs in D²PAK-7 Packaging	Nexperia announced a range of efficient and robust...	12377	Product Release	Automotive-qualified 1200 V SiC MOSFETs in D²PAK-7 Packaging	Nexperia announced a range of efficient and robust automotive-qualified silicon carbide MOSFETs with R<sub>DS(on)</sub> values of 30, 40 and 60 mΩ. These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q) were previously offered in industrial grade and have now been awarded AEC-Q101 certification. This makes them suitable for automotive applications like onboard chargers (OBC) and traction inverters in electric vehicles (EV) as well as for DC/DC converters, heating ventilation and air-conditioning systems (HVAC). These switches are housed in the increasingly popular surface mounted D²PAK-7 package, which is more suitable for automated assembly operations than through-hole devices. Concentrating on the nominal R<sub>DS(on)</sub> value neglects the fact that it can increase by more than 100 % as device operating temperatures rise, resulting in considerable rise of conduction losses. The temperature stability is even more critical when SMD package technologies are used compared to through-hole technology since devices are cooled through the PCB. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and focused the temperature stability of its SiC MOSFETs, with the nominal value of R<sub>DS(on)</sub> increasing by 38 % over an operating temperature range from 25 °C to 175 °C. This feature enables engineers to address higher output power in their applications achieved with a higher nominal 25 °C rated R<sub>DS(on)</sub> without sacrificing performance. Nexperia is planning to release automotive-qualified versions of its 17 mΩ and 80 mΩ R<sub>DS(on)</sub> SiC MOSFETs in 2025.	05.05.2025 07:30:00	May	news_2025-05-15_8.jpg	\images\news_2025-05-15_8.jpg	https://www.nexperia.com/about/news-events/press-releases/nexperia-launches-industry-leading-automotive-qualified-1200-v-silicon-carbide-mosfets-in-d2pak-7-packaging	nexperia.com
Proof of Concept for integrating Current Sensor into Power Module	Asahi Kasei Microdevices (AKM) and Silicon Austria...	12371	Industry News	Proof of Concept for integrating Current Sensor into Power Module	Asahi Kasei Microdevices (AKM) and Silicon Austria Labs (SAL) have successfully completed a joint proof of concept for integrating a current sensor into a power module to be used in automotive applications such as traction inverters and DC/DC converters. This technology enables energy efficiency, as well as compact and lightweight design for ultra-high current applications using next-generation SiC power devices. AKM is developing the EZ232L, a linear Hall IC for coreless current sensors. With its resolution and accuracy, this technology is said to enhance the efficiency of traction inverters that require operation over a wide current range. AKM collaborated with the Austrian research center SAL to conduct a joint technical verification, using EZ232L to develop a power module that integrates a current sensor in order to address the limitations of conventional magnetic core-based current sensing.	02.05.2025 07:00:00	May	news_2025-05-15_2.jpg	\images\news_2025-05-15_2.jpg	https://www.akm.com/global/en/about-us/news/2025/20250502-sal-powermodule/	akm.com
AC/DC Power Supplies delivering 20 W	In new energy applications, AC/DC power supplies i...	12421	Product Release	AC/DC Power Supplies delivering 20 W	In new energy applications, AC/DC power supplies increasingly must operate over nominal supply values from 100 V<sub>AC</sub> to 277 V<sub>AC</sub>. The recently launched RAC20NE-K/277 from Recom matches this with 20 W available at optional 12, 24, or 36 V<sub>DC</sub> outputs. Encapsulated versions are available with constant voltage or constant current limiting characteristics and a constant voltage open frame type with 12 or 24 V<sub>DC</sub> output. The RAC20NE-K/277 series allows reliable operation at full load to 60 °C ambient, and to 85 °C with derating. The parts are Class II insulated, OVC III rated to 3000 m altitude (OVC II/5000m) and meet EN 55032 'Class B' EMC requirements with a floating or grounded output. Standby and no-load power dissipation meet Eco-design requirements. The RAC20NE-K/277 board-mount, encapsulated parts are sized 52.5 mm x 27.6 mm x 23.0 mm while the open frame parts with Molex connections measure 80.0 mm x 23.8 mm x 22.5 mm.	01.05.2025 14:30:00	May	news_2025-06-15_16.jpg	\images\news_2025-06-15_16.jpg	https://recom-power.com/en/company/newsroom/rec-n-versatile-ac!sdc-power-supplies-deliver-20w-in-small-form-factor-406.html?3	recom-power.com
Family of Current Sensors	LEM adds two members to its IN family of current s...	12385	Product Release	Family of Current Sensors	LEM adds two members to its IN family of current sensors, suitable for a range of demanding systems. The IN 1500-S current sensor is specifically designed for high performance and precision in 1500 A nominal current applications, while the IN 1000-SHF current sensor is suitable for applications requiring very wide bandwidth. The devices are intended for applications such as MRI, calibration units, power meters, and energy measurement. With IN 1500-S, the IN family for current sensing now boasts eight devices, and it is LEM's most advanced high-precision range of current sensors yet, underpinned by LEM's closed-loop current transducers that use a highly-accurate zero-flux detectors based on LEM's fluxgate technology. The current sensors achieve ultra-high precision current measurements for DC, AC and pulsed currents. Using fluxgate technology in transducers for precise current measurement is not new; however, it has limitations linked to a ripple that stems from the excitation voltage. LEM takes fluxgate current transducers to "previously unachieved performance levels" through digital technology, gaining not only a major reduction of the ripple from the fluxgate driving signal but significantly improving the device's immunity to temperature effects, interference and supply voltage variation. In addition, LEM has used FPGAs for faster start-up of these UL/UR certified devices. The IN 1500-S device provides a linearity up to ±0.0002 % within a frequency bandwidth up to 2 MHz @ ±3dB while operating at temperatures between -40 °C and +85 °C at a stability up to 0.1 ppm/month.	30.04.2025 15:30:00	Apr	news_2025-05-15_16.jpg	\images\news_2025-05-15_16.jpg	https://www.lem.com/en/in	lem.com
Thermoset Laminates for Automotive Radar Sensor Applications	Rogers announced its latest innovation in dielectr...	12376	Product Release	Thermoset Laminates for Automotive Radar Sensor Applications	Rogers announced its latest innovation in dielectric materials: RO4830™Plus Circuit Materials, which are well suited for cost-sensitive millimeter wave PCB applications, such as 76-81 GHz automotive corner radar sensors. RO4830 Plus woven glass free, thermoset laminates possess the stable dielectric constant and low insertion loss required by RF designers for millimeter wave automotive radar sensors. The design dielectric constant of RO4830Plus laminates is approximately 3.03 at 77GHz (microstrip differential phase length method). The combination of Rogers' low loss thermoset resin and very low profile electrodeposited copper foil translates to a very low insertion loss of 1.5 dB/inch for 5mil laminates, as measured by the microstrip differential phase length method. RO4830™ Plus laminates are engineered for the cap layer on FR-4 multi-layer board designs, which are commonly used for 76- 81 GHz automotive radar sensor PCB applications. These thermoset laminates are free of woven glass, contributing to good laser drilling performance, and CAF resistance. RO4830 Plus laminates can be fabricated using standard epoxy/glass (FR-4) processes and are compatible with RO4400™ bond ply. These PFAS-free laminates have the UL-V0 flame retardant rating and are lead free solder process compatible.	27.04.2025 06:30:00	Apr	news_2025-05-15_7.jpg	\images\news_2025-05-15_7.jpg	https://www.rogerscorp.com/news/2025/rogers-corporation-launches-new-thermoset-laminates-for-automotive-radar-sensor-applications	rogerscorp.com
High-Voltage Resonant Inductors and Power Conversion Solutions at PCIM 2025	ITG Electronics will showcase its latest power con...	12359	Industry News	High-Voltage Resonant Inductors and Power Conversion Solutions at PCIM 2025	ITG Electronics will showcase its latest power conversion solutions at the at PCIM 2025 in Nuremberg, Germany, May 6 – 8, 2025. Attendees can explore ITG's newly released High-Voltage Resonant Inductors, along with a wide range of advanced power conversion solutions. Among other solutions, at PCIM 2025 ITG Electronics will also highlight its Mid-Tier PFC Chokes, offering cost-effective, high-performance power factor correction solutions. The company will showcase its LLC Transformers, designed for high-efficiency resonant power topologies, along with Power Block Converters, which provide robust power distribution capabilities. Additionally, ITG will feature its Quarter Brick 48V Down Converters, engineered for reliable and compact voltage regulation. At the forefront of ITG's exhibition will be its RL111008A and RL111010A series of high-voltage resonant inductors. Designed for industrial applications, these inductors feature industry-leading 5% tolerance control, ensuring accurate resonant frequency for LLC power conversion. ITG's RL111008A series offers an inductance range from 3-65uH and handles 64 Amps at 3uH, while the RL111010A series ranges from 16-200uH, supporting 32 Amps at 16uH. Both series are engineered for high-voltage, high-current applications with low AC losses. Rated for voltages from 600Vac to 1000VDC, they feature a dielectric strength of 4500VDC, ensuring robust performance in demanding industrial environments. Join ITG Electronics at PCIM 2025 (Booth 4-117, Hall 4) to see these innovations firsthand and discuss how ITG's power solutions can optimize your systems.	25.04.2025 12:00:00	Apr	news_2025-05-01_7.png	\images\news_2025-05-01_7.png	https://www.itg-electronics.com/en	itg-electronics.com
1200 V SiC MOSFETs Six-Pack Modules	SemiQ has announced a series of 1200 V SiC MOSFET ...	12367	Product Release	1200 V SiC MOSFETs Six-Pack Modules	SemiQ has announced a series of 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable more compact system-level designs at large scale. The high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and a body diode. These are arranged in a three-phase bridge topology, with the modules additionally featuring split DC negative terminals, press-fit terminal connections and a Kelvin reference for stable operation. All parts have been tested beyond 1350 V, with 100 % wafer-level burn in (WLBI). They have been developed for applications including AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging, induction heating and welding, renewable energy supplies and UPS. The modules are operational to 175 °C junction temperature, and have been designed for easy mounting, including direct mounting to a heatsink. The product family has been launched with 20, 40 and 80 mΩ variants (GCMX020A120B2T1P, GCMX040A120B2T1P and GCMX080A120B2T1P) that have a power dissipation of 263, 160 and 103 W respectively. They conduct a continuous drain current of 29 – 30 A and a pulsed drain current of 70 A. Additionally, they have turn-on switching energy of 0.1- 0.54 mJ and a turn-off switching energy of 0.02 - 0.11 mJ with a switching time of 56 - 105 ns. Including heatsink mountings the module measures 62.8 x 33.8 x 15 mm³.	24.04.2025 13:30:00	Apr	news_2025-05-01_15.jpg	\images\news_2025-05-01_15.jpg	https://semiq.com/semiq-launches-1200-v-gen3-sic-mosfet-modules-in-sot-227-package-for-reduced-switching-losses-and-improved-thermal-resistance/	semiq.com
High Power Density SiC Power Modules	ROHM has developed the 4-in-1 and 6-in-1 SiC molde...	12365	Product Release	High Power Density SiC Power Modules	ROHM has developed the 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs. The lineup includes six models rated at 750 V (BSTxxx1P4K01) and seven products rated at 1200 V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications. The HSDIP20 features an insulating substrate with appropriate heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM's 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38 °C cooler (at 25 W operation). This heat dissipation performance supports high currents even in a compact package. Therefore, ROHM claims to achieve "industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules". As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations. In industrial equipment the devices are suited for e. g. EV charging stations, V2X systems, AC servos, server power supplies, PV inverters or power conditioners.	24.04.2025 11:30:00	Apr	news_2025-05-01_13.jpg	\images\news_2025-05-01_13.jpg	https://www.rohm.com/news-detail?news-title=2025-04-24_news_hsdip&defaultGroupId=false	rohm.com
Super Junction MOSFETs for AI Server and Telecoms Power	WeEn Semiconductors highlights the company's lates...	12369	Product Release	Super Junction MOSFETs for AI Server and Telecoms Power	WeEn Semiconductors highlights the company's latest 600 V super junction MOSFET for computing and telecoms server applications. The WSJ2M60R065DTL has been specifically developed to address the demands of artificial intelligence (AI) and other high-performance processing applications by enabling improved efficiency, smaller form factors and easier thermal management. Based on the company's latest generation super junction technology, the WeEn WSJ2M60R065DTL super junction MOSFET is said to combine an "industry-leading on resistance (R<sub>DS(ON)</sub>) and figure of merit (R<sub>DS(ON)</sub>*Q<sub>g</sub>) with an ultra-compact TOLL package". The WSJ2M60R065DTL is rated for 50 A, features a maximum R<sub>DS(ON)</sub> of 65 mΩ and has a typical blocking voltage of around 700 V. An integrated and fine-tuned forward recovery diode (FRD) takes care of reverse recovery robustness and balanced high-temperature performance. The body diode can withstand a commutation speed of 1000 A/µs without damage, making the WSJ2M60R065DTL particularly suitable for Zero Voltage Switching (ZVS) applications in soft-switching topologies where it can deliver high efficiency while handling irregular operating conditions. At the same time, stable resistance performance delivers a steady and predictable R<sub>DS(ON)</sub> across a range of current and temperature conditions.	23.04.2025 15:30:00	Apr	news_2025-05-01_17.jpg	\images\news_2025-05-01_17.jpg	https://www.ween-semi.com/en/news/Second-Generation-Super-junction-MOSFET-Beginning-New-Era	ween-semi.com
Laser Drivers using Automotive-Qualified GaN FETs	Efficient Power Conversion (EPC) introduces the EP...	12361	Product Release	Laser Drivers using Automotive-Qualified GaN FETs	Efficient Power Conversion (EPC) introduces the EPC91116, a high-speed, high-current laser driver evaluation board tailored for indirect time-of-flight (iToF) applications in automotive and industrial sensing. Built around the AEC-Q101 qualified EPC2203 eGaN® FET, the EPC91116 delivers nanosecond-scale performance with a flexible, low-cost architecture that simplifies prototyping and accelerates time to market. As iToF systems become critical for automotive driver monitoring, in-cabin sensing, and 3D mapping, designers need tools that are ready for qualification and production. The EPC91116 answers this need with support for peak currents above 10 A, pulse widths as narrow as 5 ns, and switching speeds up to 100 MHz. These automotive-qualified components utilize the EPC2203, an 80 V, 17 A (pulsed), 0.9 mm × 0.9 mm GaN FET with 670 pC total gate charge and only 80 mΩ R<sub>DS(on)</sub>, and the AEC-Q100-qualified 74LVC2T45GS logic-level translator. The simplified gate drive eliminates the need for specialized gate drivers by using a low-cost CMOS logic IC to reliably drive GaN at up to 100 MHz. The input logic is compatible with logic levels from 1.2 V to 5.5 V with simple modification. This development platform is suited for engineers looking to implement automotive-grade iToF designs or explore other fast-switching power topologies such as Class-E amplifiers, SEPIC converters, or other lidar systems.	23.04.2025 07:30:00	Apr	news_2025-05-01_9.jpg	\images\news_2025-05-01_9.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3209/low-cost-itof-laser-drivers-using-automotive-qualified-gan-fets	epc-co.com
1200 V and 1600 V Rectifiers meet Automotive-Quality Standards	Taiwan Semiconductor introduces two series of high...	12368	Product Release	1200 V and 1600 V Rectifiers meet Automotive-Quality Standards	Taiwan Semiconductor introduces two series of high-voltage rectifiers manufactured to AEC-Q101 standards and offered in automotive and commercial grade versions. The fast-recovery HS1Q Series (1,200 V, 1 A, high-efficiency) and the standard-recovery SxY Series (2 A, 1,600 V and 1 A, 1,600 V) rectifiers operate at a maximum junction temperature of 175 °C. They are integrated in a DO-214AC (SMA) package, which is RoHS compliant and halogen-free. Production Part Approval Process (PPAP) documentation is available. The components are suited for bootstrap, freewheeling and desaturation applications for IGBT, MOSFET and WBG gate drivers used in electric vehicles and high-voltage battery systems. Other applications include alternative energy systems; grid-tied and smart grid systems, medical, industrial, UPS systems and plasma generators, smart electric metering and others.	22.04.2025 14:30:00	Apr	news_2025-05-01_16.jpg	\images\news_2025-05-01_16.jpg	https://www.taiwansemi.com/en/	taiwansemi.com
Call for Nominations for 2026 Global Energy Efficiency Award	Recognizing that energy efficiency is critical for...	12374	Event News	Call for Nominations for 2026 Global Energy Efficiency Award	Recognizing that energy efficiency is critical for addressing climate change and sustainability, PSMA now calls for nominations for its 2026 Global Energy Efficiency award. Nominations must be submitted by September 2, 2025. To submit a nomination, go to the 2026 Global Energy Efficiency Award web page. There is no cost for submissions, and nominees need not be PSMA members. Finalists will be announced on October 1, 2025. The 2026 winner will be awarded at next year's APEC 2026, which will be held in San Antonio, Texas. PSMA established its annual Global Energy Efficiency Award in April 2024 to honor breakthrough innovations that drive substantial energy savings across industries and applications. Nominees can be any company or organization worldwide that designs or manufactures electric-powered systems. The focus of the award criteria is on energy efficiency (rather than renewables or electrification), appliances and equipment (rather than building codes) and/or high global impact. PSMA is a non-profit professional organization with the two-fold objective of enhancing the stature and reputation of its members and their products and improving their technological power sources knowledge. Its aim is to educate the electronics industry, academia, government and industry communities as to the applications and importance of all types of power sources and conversion devices.	22.04.2025 10:00:00	Apr	news_2025-05-15_5.jpg	\images\news_2025-05-15_5.jpg	https://www.psma.com/technical-forums/energy-management/energy-efficiency-award	psma.com
International Workshop on Power Supply on Chip (PwrSoC 2025)	The 9th International Workshop on Power Supply on ...	12353	Event News	International Workshop on Power Supply on Chip (PwrSoC 2025)	The 9th International Workshop on Power Supply on Chip (PwrSoC 2025) will take place from September 24 to 26, 2025, at Seoul National University in Seoul, Korea, with Professor Jaeha Kim serving as the General Chair and Local Host. The PwrSoC Workshop is a leading international event focused on power supply integration technologies, specifically Power Supply on Chip and Power Supply in Package. Co-sponsored by IEEE and the Power Sources Manufacturers Association (PSMA), the workshop is held biennially at various locations worldwide, bringing together researchers and engineers from academia and industry to share the latest trends and discuss future directions. The technical program will follow a single-track format, featuring presentations from leading experts in power supply integration. Participants will also have the exclusive opportunity to visit SK Hynix's advanced semiconductor fabrication facility, gaining insights into one of the world's top memory manufacturers and its cutting-edge technologies.	19.04.2025 06:00:00	Apr	news_2025-05-01_1.png	\images\news_2025-05-01_1.png	http://pwrsocevents.com/	pwrsocevents.com
EMC Shielding Tents	The shielding tents from Langer EMV-Technik have b...	12366	Product Release	EMC Shielding Tents	The shielding tents from Langer EMV-Technik have been specially developed for EMC measurements during development. They provide effective shielding against electromagnetic interference and enable precise measurements directly in the development environment – whether for reducing interference coupling in sensitive test set-ups or for the targeted injection of interference signals. For example, the Z23-1 set is a shielding tent which is suited for EMC measurements on small assemblies. It offers reliable shielding attenuation of 45 - 50 dB (30 MHz - 1 GHz) with dimensions of 900 × 500 × 400 mm³. When more space is needed, the Z23-2 set, measuring 900 × 500 × 650 mm³, comes into consideration. It provides the same effective shielding attenuation as the Z23-1 set, but is higher and therefore more flexible to use.	17.04.2025 12:30:00	Apr	news_2025-05-01_14.png	\images\news_2025-05-01_14.png	https://www.langer-emv.de/en/index	langer-emv.de
Radiation-hardened Power MOSFET Family	The JANS qualification represents the highest leve...	12364	Product Release	Radiation-hardened Power MOSFET Family	The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications. Microchip Technology now announced the completion of its family of radiation-hardened (rad-hard) power MOSFETs to the MIL-PRF-19500/746 slash-sheet specification and the achievement of JANSF qualification for its JANSF2N8587U3, 100V N-channel MOSFET to 300 Krad (Si) Total Ionizing Dose (TID). Microchip's JANS series of rad-hard power devices is available in voltage ranges from 100 – 250 V to 100 Krad (Si) TID, with the family expanding to higher Radiation Hardness Assurance (RHA) levels, starting with the JANSF2N7587U3 at 300 Krad (Si) TID. The JANS RH MOSFET die is available in multiple package options including a plastic package using the MIL-qualified JANSR die, providing a power device for New Space and Low Earth Orbit (LEO) applications. The ceramic package is hermetically sealed and developed for total dose and Single-Event-Environments (SEE). The devices are designed to meet the MIL-PRF19500/746 standard with enhanced performance.	17.04.2025 10:30:00	Apr	news_2025-05-01_12.jpg	\images\news_2025-05-01_12.jpg	https://www.microchip.com/en-us/about/news-releases/products/microchip-completes-radiation-hardened-power-mosfet-family	microchip.com
Compact Coil-integrated Step-Down DC/DC Converter can replace LDOs	Torex Semiconductor has developed the XCL247/XCL24...	12362	Product Release	Compact Coil-integrated Step-Down DC/DC Converter can replace LDOs	Torex Semiconductor has developed the XCL247/XCL248 Series, compact general-purpose "micro DC/DC" converters with integrated inductors and high-voltage capabilities. Designed for space-saving and high-efficiency under light loads, these converters are suited for several applications, including industrial and consumer use. The XCL247/XCL248's most notable feature is its voltage capability of 36 V in relation to its space requirements. Additionally, with a quiescent current of 11 µA, the series delivers its efficiency across load conditions-86 % at V<sub>IN</sub> = 12 V, V<sub>OUT</sub> = 5 V, I<sub>OUT</sub> = 1 mA, and 88 % at I<sub>OUT</sub> = 300 mA. The device can replace traditional, larger high-voltage LDO regulators. The XCL247/XCL248 supports input voltages up to 36 V, compatible with 12 V and 24 V power supplies while providing an output current of 600 mA across a -40 °C to 105 °C temperature range. Its coil-integrated design minimizes PCB wiring patterns, reducing noise radiation from current loops. Additionally, the integrated coil eliminates the need for external coil selection. This series adopts P-channel driver FETs. This allows for 100% duty operation, enabling direct pass-through of the input voltage when it falls below the output voltage setting.	17.04.2025 08:30:00	Apr	news_2025-05-01_10.png	\images\news_2025-05-01_10.png	https://product.torexsemi.com/en/news/product/20250417_4654	torexsemi.com
IGBT and RC-IGBT Devices for EVs	Infineon Technologies has launched a generation of...	12360	Product Release	IGBT and RC-IGBT Devices for EVs	Infineon Technologies has launched a generation of high-voltage automotive IGBT chips. Among these offerings are the EDT3 (Electric Drive Train, 3 rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance of electric drivetrain systems, making them particularly suitable for automotive applications. The EDT3 and RC-IGBT bare dies have been engineered to create custom power modules. The generation EDT3 achieve up to 20 percent lower total losses over the EDT2 at high loads while maintaining efficiency at low loads. The EDT3 chipsets, which are available in 750 V and 1200 V classes, are well-suited for main inverter applications in a diverse range of electric vehicles. Its maximum virtual junction temperature is specified with 185 °C. Infineon's latest EDT3 IGBT chip technology is now integrated into the HybridPACK™ Drive G2 automotive power module, offering a power range of up to 250 kW within the 750 V and 1200 V classes. All chip devices are offered with customized chip layouts, including on-chip temperature and current sensors. Additionally, metallization options for sintering, soldering and bonding are available on request.	16.04.2025 06:30:00	Apr	news_2025-05-01_8.jpg	\images\news_2025-05-01_8.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFATV202504-087.html	infineon.com
Enhancing High-Performance Electric Motors	Hyperdrives has chosen CISSOID's SiC Inverter Cont...	12357	Industry News	Enhancing High-Performance Electric Motors	Hyperdrives has chosen CISSOID's SiC Inverter Control Modules (ICMs) to power its hollow conductor cooled electric motors. This collaboration aims to set new standards in power density, efficiency, and performance within the electric vehicle industry and beyond. Hyperdrives' approach utilizes a direct cooling system that dissipates heat at its source by channelling cooling fluid through hollow conductor windings. This design enhances heat dissipation by a factor of ten, allowing for continuous currents three times higher than traditional systems and resulting in motors that are twice as power-dense. The company's automotive flagship product, Hyperdrives One is said to reduce material costs by up to 40 %. To complement this motor design, Hyperdrives has integrated CISSOID's 3-Phase 1200 V / 550 A SiC Inverter Control Module.	15.04.2025 10:00:00	Apr	news_2025-05-01_5.jpg	\images\news_2025-05-01_5.jpg	https://www.cissoid.com/news/hyperdrives-selects-cissoid-s-inverter-control-modules-to-enhance-high-performance-electric-motors-30	cissoid.com
Automotive Qualification for GaN Products	Navitas Semiconductor has announced its high-power...	12356	Industry News	Automotive Qualification for GaN Products	Navitas Semiconductor has announced its high-power GaNSafe™ ICs achieve automotive qualification for both AEC-Q100 and AEC-Q101, showcasing GaN's next inflection into the automotive market. This 4th generation family integrates control, drive, sensing, and critical protection features that enable reliability and robustness in high-power applications. It is claimed to be "the world's safest GaN with short-circuit protection (350 ns max latency), 2 kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control". All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no V<sub>CC</sub> pin. The Automotive Electronics Council (AEC) lists various qualifications focused on failure mechanism-based stress tests for packaged integrated circuits (AEC-Q100) and discrete semiconductors (AEC-Q101) used in automotive applications. Navitas' GaNSafe has been qualified to both standards to ensure that both the discrete power FET stage and the combined IC solution meet these stringent specifications. To support the qualification, Navitas has created a reliability report that analyzes over 7 years of production and field data. It demonstrates their track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready. This reliability report is available to qualified customers.	15.04.2025 09:00:00	Apr	news_2025-05-01_4.jpg	\images\news_2025-05-01_4.jpg	https://navitassemi.com/navitas-announces-automotive-qualification-of-high-power-gansafe-ics/	navitassemi.com
Reliable Board-to-Board Connection Solution	Würth Elektronik ICS highlights its lead-free Powe...	12363	Product Release	Reliable Board-to-Board Connection Solution	Würth Elektronik ICS highlights its lead-free Powerelement 'LF PowerBasket', a pluggable high-current contact for contacting printed circuit boards in demanding industrial and automotive applications. The LF PowerBasket can be connected to the PCB using press-fit technology, SMT or THT. Thanks to a special contact alloy, the LF PowerBasket can be used at a continuous operating temperature of 150 °C. The contact springs of the LF PowerBasket form a basket that is designed to hold the contact pins and blades with low insertion forces. This basket design of the LF PowerBasket without a plastic housing is characterized by a position tolerance of 0.6 mm. The Powerelement can therefore be used for board-to-board connections with multiple contacts. The pluggable connections enable reduced installation effort and simplified maintenance procedures.	11.04.2025 09:30:00	Apr	news_2025-05-01_11.jpg	\images\news_2025-05-01_11.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=wuerth-elektronics-ics-pcim-2025	we-online.com
Research: Tree Gum supercharges Supercapacitor Lifespan	A waste gum produced by trees found in India could...	12355	Industry News	Research: Tree Gum supercharges Supercapacitor Lifespan	A waste gum produced by trees found in India could be the key to unlocking a new generation of better-performing, more eco-friendly supercapacitors, researchers say. Scientists from universities in Scotland, South Korea and India are behind the development, which harnesses the unique properties of the otherwise useless tree gum to prevent supercapacitors from degrading over tens of thousands of charging cycles. The team's finding could help reduce the environmental impact of supercapacitors, whose long-term performance can be affected by their use of acidic electrolytes, which can cause unwanted side reactions with their metal electrodes, reducing their ability to hold their full charge over time.bIn a paper published in the journal Energy Storage Materials, the researchers demonstrate how they combined gum kondagogu, a polysaccharide produced by the bark of the Cochlospermum Gossypium tree, to sodium alginate to manufacture a spongelike biopolymer they called 'KS'. They found that adding KS to the acidic electrolyte of a conventional supercapacitor helped to create a protective layer over its carbon electrodes. The KS layer helped prevent physical degradation of the electrodes while still allowing the ion transport process which enables the supercapacitor to charge and discharge. In lab tests, they showed that their improved electrolyte boosted the supercapacitor's performance significantly, helping it maintain 93 % of its full energy capacity after 30,000 cycles. Over the same span, the capacity of an otherwise identical supercapacitor tested by the team dropped to just 58 %. The team's paper, titled 'Long-lasting supercapacitor with stable electrode-electrolyte interface enabled by a biopolymer conjugate electrolyte additive', is published in Energy Storage Materials.	11.04.2025 08:00:00	Apr	news_2025-05-01_3.jpg	\images\news_2025-05-01_3.jpg	https://www.gla.ac.uk/news/headline_1170597_en.html	gla.ac.uk
Joint Development Agreement for GaN Power	IQE and X-FAB Silicon Foundries have signed a Join...	12354	Industry News	Joint Development Agreement for GaN Power	IQE and X-FAB Silicon Foundries have signed a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution. With an initial two-year scope of work, IQE and X-FAB will collaborate to develop a 650V GaN device. The agreement will leverage IQE's GaN epitaxy design and process expertise, along with X-FAB's technology development and device fabrication capabilities to offer an optimized technology-substrate combination for automotive, data center and consumer applications. This collaboration will provide fabless semiconductor companies with an off-the-shelf GaN platform. The technology will also serve as a foundation for future product development, extending beyond 650V to address the growing market demand for Power Electronics.	10.04.2025 07:00:00	Apr	news_2025-05-01_2.jpg	\images\news_2025-05-01_2.jpg	https://www.xfab.com/news/details/article/iqe-and-x-fab-sign-joint-development-agreement-for-gan-power	xfab.com
Robots and Drones are making our World safer and protecting Lives	The second eBook in the Vicor powering innovation ...	12358	Industry News	Robots and Drones are making our World safer and protecting Lives	The second eBook in the Vicor powering innovation series highlights designs using 48 V and high-density power modules to protect our world. The company describes how its compact and scalable power solutions enable customers to design life-saving products and mission critical devices in its latest eBook, Protecting and Saving Lives. This resource imparts the vital role that high-density power modules play in ensuring safety and reliability across various industries, such first-responders, medical and defence. The eBook unpacks the growing importance of robotics and tactical drone support for first responders and emergency services. These drones can be rapidly deployed in the face of natural disasters to provide instant communication or deliver quick and crucial supplies to hard-to-reach locations. The unique guide explores the power delivery networks of Vicor power solutions, delineating how the flexible and scalable solutions support maximum payload under rugged, demanding conditions. From underwater robots securing ports to drones delivering emergency supplies to storm-ravaged areas, the power modules ensure that critical systems operate flawlessly in any environment. These applications and devices depend on the most advanced and reliable 48V power delivery networks to ensure these lifesaving applications perform when needed most. It includes case studies, technical insights like detailed explanations of the design features and technologies as well as industry applications.	09.04.2025 11:00:00	Apr	news_2025-05-01_6.jpg	\images\news_2025-05-01_6.jpg	https://www.vicorpower.com/resource-library/ebook/protecting-saving-lives-pi-ebook	vicorpower.com
Red Dot Award for Product Design 2025	RECOM's AC/DC RACPRO1 DIN Rail power supplies have...	12372	Industry News	Red Dot Award for Product Design 2025	RECOM's AC/DC RACPRO1 DIN Rail power supplies have been awarded the Red Dot Award: Product Design 2025, one of the highest possible international recognitions for excellence in design and innovation. The Red Dot Award honors products that combine reliable technical performance with outstanding design. The RACPRO1 Series was chosen for its compact form factor, efficiency and industrial design, specifically tailored for next-generation automation and control systems.	09.04.2025 08:00:00	Apr	news_2025-05-15_3.jpg	\images\news_2025-05-15_3.jpg	https://recom-power.com/en/rec-n-recom-wins-red-dot-award-for-product-design-2025-with-innovative-ac!sdc-racpro1-din-rail-series-422.html?2	recom-power.com
Stable Operating Range for GaN MISHEMTs in RF Power Amplifiers identified	Imec, a research and innovation hub in nanoelectro...	12340	Industry News	Stable Operating Range for GaN MISHEMTs in RF Power Amplifiers identified	Imec, a research and innovation hub in nanoelectronics and digital technologies, demonstrates that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility Transistors) maintain consistent performance when operating within a well-defined range. These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication. GaN MISHEMTs are being explored for use in 5G+/6G RF systems due to their excellent efficiency and power-handling capabilities. However, these devices face challenges, particularly with positive gate bias instability (ΔV<sub>th</sub>), where shifts in the threshold voltage under certain conditions can affect the performance and long-term reliability of the power amplifier. Gate bias instability in GaN MISHEMTs is a complex and largely unexplored phenomenon that can occur in the different operational states -off, semi-on, and on state- each exhibiting distinct instability mechanisms. Moreover, its role in the power amplifier operation has not been widely studied, partly because traditional RF power amplifiers typically use GaAs) HBT or HEMTs without a dielectric gate. To bridge this gap, imec researchers introduce a pragmatic analytical approach that directly compares a stable range of gate voltages in DC conditions with the actual gate modulation range in the RF power amplifier operation. Their analysis reveals a strong overlap between these two ranges, confirming that GaN MISHEMTs remain stable within the typical voltage swing of RF power amplifiers. This allows linearly operating power amplifiers to be designed that avoid a ΔV<sub>th</sub> concern. The researchers also show that the presence of naturally occurring positive interfacial polarization charges at the material interface plays a key role in preventing unwanted shifts in operating voltage over time.	03.04.2025 08:00:00	Apr	news_2025-04-15_3.jpg	\images\news_2025-04-15_3.jpg	https://www.imec-int.com/en/press/imec-identifies-stable-operating-range-gan-mishemts-rf-power-amplifiers	imec-int.com
High Power RF Switch	Menlo Microsystems released to production the MM52...	12344	Product Release	High Power RF Switch	Menlo Microsystems released to production the MM5230, a small form-factor, high performance RF switch. The MM5230 is engineered for high-power applications, supporting up to 25 W continuous and 150 W pulsed power. At the same time, its compact, 2.5 mm x 2.5 mm size means that the MM5230 can fit easily into a wide range of systems without taking up valuable board space. The switch operates seamlessly from DC to 18 GHz, and with its versatile Super-Port mode, extends to 26 GHz, making it well-suited for a wide variety of end applications. The contact design and materials, inherent in the Ideal Switch® technology, enable over 50 billion switching cycles typically. Being an RF device the insertion losses play an important role. With an on-state insertion loss of 0.3 dB at 6 GHz, the MM5230 minimizes signal degradation, which means that there is almost no loss in signal quality. With a typical IIP3 of 95 dBm, the MM5230 offers high linearity, keeping signals clear and undistorted. The MM5230's Super-Port mode extends its frequency range from 18 to 26 GHz. In this mode, the switch offers improved RF isolation and better return loss, which results in even higher-quality performance, especially when cascading switches. This solution is a perfect fit for several high-demand industries, in application fields like defense and aerospace, test and measurement, medical equipment and wireless infrastructure.	01.04.2025 07:30:00	Apr	news_2025-04-15_7.jpg	\images\news_2025-04-15_7.jpg	https://menlomicro.com/newsroom/menlo-micro-releases-to-production-the-mm5230-high-power-rf-switch	menlomicro.com
Joint Development of Automotive Components using GaN Semiconductors	Mazda Motor Corporation and ROHM have commenced a ...	12341	Industry News	Joint Development of Automotive Components using GaN Semiconductors	Mazda Motor Corporation and ROHM have commenced a joint development of automotive components using GaN power semiconductors. Since 2022, Mazda and ROHM have been jointly working on the development of inverters using SiC power semiconductors under a collaborative framework for the development and production of electric drive units. Now, they have also embarked on the development of automotive components using GaN power semiconductors, aiming to create innovative automotive components for next-generation electric vehicles. Mazda and ROHM aim to materialize the concept and unveil a demonstration model within FY2025, with practical implementation targeted for FY2027.	28.03.2025 09:00:00	Mar	news_2025-04-15_4.jpg	\images\news_2025-04-15_4.jpg	https://www.rohm.com/news-detail?news-title=2025-03-28_news&defaultGroupId=false	rohm.com
CEO of SiC Semiconductor Manufacturer appointed	Wolfspeed appointed Robert Feurle as Chief Executi...	12338	People	CEO of SiC Semiconductor Manufacturer appointed	Wolfspeed appointed Robert Feurle as Chief Executive Officer (CEO), effective May 1, 2025, following a comprehensive internal and external search by the Board of Directors. Feurle succeeds Thomas Werner, who is serving as interim Executive Chairman and will return as Chairman of the Board following the transition. Being a citizen of both the United States and Germany, Feurle will be returning to the United States where he previously spent a decade in executive roles at Micron Technology and will be relocating to the Company's headquarters in Durham, North Carolina, where he will work closely with Werner to ensure a smooth transition. Most recently, he served as Executive Vice President and General Manager of the Opto Semiconductors Business Unit at ams-OSRAM AG, where he was responsible for managing more than 10,000 employees in sites and factories around the world. Previously, at Infineon Technologies, Micron Technology, Qimonda, and Siemens, Feurle managed strategic initiatives that enhanced competitiveness and increased revenue growth in challenging global markets. Previously e. g. at Infineon Technologies, he strategically expanded market opportunities with product introductions in the field of IGBT and SiC technologies and leading a global business unit focused on competitive differentiation and profitable growth. He was also part of the team at Infineon supporting the proposed acquisition of the Wolfspeed operations in 2016. "His experience in market-driven technology innovation and strategic business scaling makes him uniquely suited to advance Wolfspeed's global leadership in silicon carbide technology", Wolfspeed says in a press release.	27.03.2025 06:00:00	Mar	news_2025-04-15_1.jpg	\images\news_2025-04-15_1.jpg	https://www.wolfspeed.com/company/news-events/news/wolfspeed-inc-appoints-semiconductor-industry-veteran-robert-feurle-as-chief-executive-officer-and-board-member/	wolfspeed.com
EMC Protection: Now also available for thin Cables	Snap ferrites, developed in-house with technology ...	12335	Product Release	EMC Protection: Now also available for thin Cables	Snap ferrites, developed in-house with technology using keys for retroactive cable noise suppression, are core products of Würth Elektronik. Now the STAR TEC and STAR-TEC LFS product families have grown as the company now also offers a ferrite for cable diameters of 2 to 3 mm that features all the proven practical benefits familiar from Würth Elektronik snap ferrites. EMC protection is becoming increasingly important for applications using smaller cable diameters as compact packages are facing more sources of interference. This makes noise suppression increasingly challenging. The STAR-TEC snap ferrites are used for retroactive suppression of frequency-dependent and conducted interference on single conductors in the frequency range from 1 MHz to 1 GHz. The STAR-TEC LFS series of snap ferrites were specifically designed for low-frequency applications in the 300 kHz to 30 MHz range. These snap ferrites offer a cable pre-fixation feature to simplify handling, and the pinching safeguard prevents assembly faults. The key, included with sample deliveries, allows the ferrites to be opened and reinstalled at any time, making EMC testing a snap. The internal lock also prevents unauthorized cable removal without the key. The plastic housing of the NiZn and MnZn ferrites is classified according to UL94 V0 and specified for an operating temperature range of -50 °C to +105 °C. All STAR-TEC and STAR-TEC LFS snap ferrites, now available for cable diameters between 2 and 25 mm.	25.03.2025 13:30:00	Mar	news_2025-04-01_16.jpg	\images\news_2025-04-01_16.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-star-tec	we-online.com
Subsidiary for the Benelux Region	Job van Galen takes over the management of the new...	12321	Industry News	Subsidiary for the Benelux Region	Job van Galen takes over the management of the newly founded subsidiary of Plasmatreat in Eindhoven, the Netherlands. The company, which manufactures and develops atmospheric pressure plasma technologies for surface treatment, serves customers in Belgium, Luxembourg and the Netherlands directly from this office, and Job van Galen is Managing Director of the new subsidiary. Van Galen holds a Bachelor of Science in Engineering Physics (2017) from Fontys University of Applied Sciences. During his more than eleven years with an international electrical equipment manufacturer, he held various technical and strategic positions and worked with companies in the automotive, medical, semiconductor, consumer goods and energy sectors. In his new role at Plasmatreat, van Galen will be responsible for technical sales, the development of sustainable relationships and application development with valued customers. Atmospheric-pressure plasma technology makes it possible to precisely modify material surfaces, improve adhesion properties and create environmentally friendly alternatives to chemical pretreatment.	24.03.2025 07:00:00	Mar	news_2025-04-01_2.jpg	\images\news_2025-04-01_2.jpg	https://www.plasmatreat.com/en/news-and-stories/news-and-press/detail/new-office-for-the-benelux-region	plasmatreat.com
Stefan Witte joins Foxy Power	Foxy Power is pleased to welcome Stefan Witte as o...	12320	Industry News	Stefan Witte joins Foxy Power	Foxy Power is pleased to welcome Stefan Witte as our new Technical Sales Director. With over 30 years of experience in the power electronics industry, Stefan brings a wealth of expertise in R&D, sales, and business development, further strengthening Foxy Power's capabilities and market presence. Stefan began his career in power electronics with a strong foundation in research and development before transitioning to distribution in 2006. Since then, he has held leadership roles in supplier management, technical sales, and international business development for high-power products. The Foxy Power team is excited to have Stefan on board and looks forward to his contributions in driving growth and innovation.	24.03.2025 06:00:00	Mar	news_2025-04-01_1.jpg	\images\news_2025-04-01_1.jpg	https://foxypower.com/	foxypower.com
PCIM Asia Shanghai 2025	The PCIM Asia Shanghai 2025 will open its doors fr...	12322	Event News	PCIM Asia Shanghai 2025	The PCIM Asia Shanghai 2025 will open its doors from September 24th to 26th, 2025 at the Shanghai New International Expo Centre in Shanghai, China. With a focus on the dynamic power electronics markets in eastern and southern China, it is a platform for global experts and companies to share and discover innovative technologies and solutions. The PCIM Asia Shanghai offers an overview of the entire value chain. The exhibition will showcase developments in photovoltaics, energy storage, charging infrastructure, electric drive systems, rail transportation, automation technology, and smart building services, among others. These sectors are gaining in importance, especially within China and Asia. Combining an exhibition and conference format, the PCIM Asia Shanghai offers a central platform for direct exchange between industry, science, and research. The event brings together industry professionals to discuss current industry topics, present forward-looking solutions, and actively shape developments in the power electronics industry. For the visitors, the more than 260 exhibiting companies, presentations, practice-based sessions, and in-depth discussions will provide lots of inputs for the further development of the industry. Exhibitors include such major companies as Mitsubishi, Rohm, Fuji, Innoscience, Sun.King and CRRC. At the end of this year there will also take place a PCIM Asia New Delhi Conference on December 9th and 10th, 2025, in New Delhi, India.	20.03.2025 08:00:00	Mar	news_2025-04-01_3.JPG	\images\news_2025-04-01_3.JPG	https://pcimasia-shanghai.cn.messefrankfurt.com/shanghai/en.html	pcimasia-shanghai.cn
Lithium-Ion Battery Management Platform	Renesas Electronics introduced all-in-one solution...	12352	Product Release	Lithium-Ion Battery Management Platform	Renesas Electronics introduced all-in-one solutions for managing lithium-ion battery packs in a wide range of battery-powered consumer products, such as e-bikes, vacuum cleaners, robotics and drones. With pre-validated firmware provided, the R-BMS F (Ready Battery Management System with Fixed Firmware) will reduce the learning curve for developers, enabling rapid designs of safe, power-efficient battery management systems. Designed for lithium-ion batteries in both 2-4 and 3-10 cell series (S), R-BMS F solutions include Renesas' fuel gauge ICs (FGICs), an integrated microcontroller (MCU) and an analog battery front end, pre-programmed firmware, software, development tools and full documentation – all available in complete evaluation kits that are now ready to ship.	18.03.2025 15:30:00	Mar	news_2025-04-15_15.jpg	\images\news_2025-04-15_15.jpg	https://www.renesas.com/en/about/newsroom/renesas-unveils-complete-lithium-ion-battery-management-platform-pre-validated-firmware	renesas.com
Chokes Offer integrated Magnetics and special Mounting	Premier Magnetics introduces the PM-CMCX5 Series, ...	12347	Product Release	Chokes Offer integrated Magnetics and special Mounting	Premier Magnetics introduces the PM-CMCX5 Series, the first offering in the company's CM Guard Series™ of advanced-technology chokes. The CM Guard Series implements integrated magnetics technology to build common mode (CM) and differential mode (DM) attenuation into a single device. The PM-CMCX5 Series devices' performance features a strong winding-to-winding insulation of 5 kV, an operating temperature from -60 °C to +155 °C and low-capacitive coupling to the core. The mechanical stability is achieved utilizing Premier Magnetics' proprietary Snap-In Technology to secure parts to the PCB without the use of epoxy during the assembly process. The PM-CMCX5 Series offers sixteen models with a selection of spread or compressed windings and common mode choke inductances from 0.5 to 30 mH.	18.03.2025 10:30:00	Mar	news_2025-04-15_10.png	\images\news_2025-04-15_10.png	https://premiermag.com/	premiermag.com
Korean Automotive Tier-1 takes Stake in U.S. Fabless Semiconductor Company for EV Applications	Elevation Microsystems, delivering energy-efficien...	12324	Industry News	Korean Automotive Tier-1 takes Stake in U.S. Fabless Semiconductor Company for EV Applications	Elevation Microsystems, delivering energy-efficient high-voltage power management solutions for sustainable electrification, announced that Hyundai Mobis has acquired a significant stake in the company. The $15 Million investment was completed in November 2024, as disclosed in the Hyundai Mobis' 2024 business report to the Financial Supervisory Service's electronic disclosure system (DART). Elevation Microsystems has expertise in designing high-voltage power semiconductors, including SiC and GaN FETs with isolated gate drivers, and Matrix LED drivers.	18.03.2025 10:00:00	Mar	news_2025-04-01_5.jpg	\images\news_2025-04-01_5.jpg	https://elevationmicro.com/hyundai-mobis-acquires-stake-in-us-fabless-semiconductor-company-for-electric-vehicle-applications/	elevationmicro.com
Power Management Chips for Data Centers	Texas Instruments (TI) debuted power-management ch...	12350	Product Release	Power Management Chips for Data Centers	Texas Instruments (TI) debuted power-management chips to support data centers. The TPS1685 is claimed to be "the industry's first 48 V integrated hot-swap eFuse with power-path protection to support data center hardware and processing needs". The devices are rated for more than 6 kW. To simplify data center design, TI also introduced a family of integrated GaN power stages, the LMG3650R035, LMG3650R025and LMG3650R070, in industry-standard TOLL packaging.	17.03.2025 13:30:00	Mar	news_2025-04-15_13.jpg	\images\news_2025-04-15_13.jpg	https://www.ti.com/about-ti/newsroom/news-releases/2025/2025-03-17-new-power-management-chips-from-ti-maximize-protection--density-and-efficiency-for-modern-data-centers.html	ti.com
Up to 92 % Efficiency for Power Supplies	Power Integrations has announced TinySwitch™...	12334	Product Release	Up to 92 % Efficiency for Power Supplies	Power Integrations has announced TinySwitch™-5, extending the output power of the family of integrated off-line switcher ICs to 175 W. The TinySwitch-5 achieves up to 92 % efficiency using basic diode rectification and optocoupler feedback. The control engine built into the TinySwitch-5 switcher ICs seamlessly manages switching frequency and power delivery to maximize efficiency, even at light loads. This enables power supplies that easily meet the light-load power consumption limit of 300 mW, set by the European Commission Energy-related Products (ErP) Directive 2009/125/EC, while still delivering up to 220 mW output power for display, controls and communications functions. An enhanced thermal package means that TinySwitch-5 ICs can deliver up to 75 W without a heatsink, and line under- and over-voltage protection ensures robustness for use in countries with unstable mains power. Reference designs are available which describe: a 12 W single-output power supply (DER-1017); a 26.5 W dual-output power supply with high standby efficiency (RDR-1016); a 36 W single-output power supply with high efficiency at light load (DER-1040); and a 120 W power supply with 92 percent efficiency at 230 V AC (DER-1027).	17.03.2025 12:30:00	Mar	news_2025-04-01_15.jpg	\images\news_2025-04-01_15.jpg	https://investors.power.com/news/news-details/2025/Power-Integrations-Launches-TinySwitch-5-ICs-for-High-Efficiency-Power-Supplies/default.aspx	power.com
Winner of the PSMA's first Global Energy Efficiency Award	Pulsiv have won the PSMA's (Power Sources Manufact...	12325	Industry News	Winner of the PSMA's first Global Energy Efficiency Award	Pulsiv have won the PSMA's (Power Sources Manufacturers Association) first Global Energy Efficiency Award. First announced on 22nd April 2024 (Earth Day), the goal of the award was to recognize a "world achievement in system design to improve energy efficiency". Nominations were collected until 9th September 2024, with the finalists being announced on 2nd October 2024 (Energy Efficiency Day). The judges evaluated finalists based on their total global impact on the power electronics industry and where the focus was on energy efficiency, rather than renewables or electrification. During a ceremony at APEC 2025 in Atlanta, Georgia, USA, which coincided with the PSMA's 40th anniversary, Pulsiv were announced as the winner for their 65 W USB-C design, which delivers low operating temperatures and a peak efficiency of 96 %. Pulsiv's 65 W USB-C reference design combines the company's OSMIUM PFC technology with QR flyback and highly optimized, ultra-compact magnetics. It represents the first in a series of designs aimed at pushing the boundaries of power conversion by significantly lowering operating temperatures, minimizing losses, and reducing size to create a sustainable platform for the USB-C standard.	17.03.2025 11:00:00	Mar	news_2025-04-01_6.jpg	\images\news_2025-04-01_6.jpg	https://www.pulsiv.com/news-press/pulsiv-wins-psma-1st-global-energy-efficiency-award	pulsiv.com
Electric Two-Wheeler Ecosystem to accelerate E-Mobility Innovation	Microchip Technology launched its Electric Two-Whe...	12332	Product Release	Electric Two-Wheeler Ecosystem to accelerate E-Mobility Innovation	Microchip Technology launched its Electric Two-Wheeler (E2W) ecosystem, which is a suite of pre-validated reference designs that addresses key challenges in e-scooter and e-bike development, including power efficiency, system integration, safety and time-to-market. By offering automotive-grade, scalable solutions, Microchip enables manufacturers to streamline development and build reliable, feature-rich electric two-wheelers at various power levels and feature requirements. Backed by design files, schematics, BOM (Bill of Materials) and global technical support, developers can decrease their time-to-market for the next-generation e-scooters and e-bikes. The E2W ecosystem comprises e. g. a BMS (Battery Management System) with intelligent power conversion and sensing. A 48 V to 12 V Power Conversion Reference Design facilitates high-efficiency power distribution, improving overall system reliability, while a 7.4 kW Single-Phase AC EV Charger Reference Design offers home charging with built-in protection features. A USB-PD Dual Charging Port is designed to provide fast, flexible charging for mobile devices to enhance user convenience. Furthermore, 350 W to 10 kW traction motor control reference cater for smooth acceleration, improved energy efficiency and precise control. Pre-integrated firmware and modular design simplify system development and reduce time-to-market. Several additional digital functionalities for system integration, smart vehicle control, intelligent touch displays and a connected user experience complement the ecosystem.	17.03.2025 10:30:00	Mar	news_2025-04-01_13.jpg	\images\news_2025-04-01_13.jpg	https://www.microchip.com/en-us/about/news-releases/products/microchip-introduces-electric-two-wheeler-ecosystem-to-accelerate	microchip.com
Exceeding the 80 PLUS 'Ruby' Certification for Highest Level of Efficiency in AI Data Center Power Supplies	Navitas Semiconductor has announced that its portf...	12339	Industry News	Exceeding the 80 PLUS 'Ruby' Certification for Highest Level of Efficiency in AI Data Center Power Supplies	Navitas Semiconductor has announced that its portfolio of 3.2 kW, 4.5 kW, and 8.5 kW AI data center power supply unit (PSU) designs exceed the new 80 PLUS 'Ruby' certification, focused on the highest level of efficiency for redundant server data center PSUs. The 80 PLUS certification program assesses and certifies the energy efficiency of internal PSUs in computers and servers. The 'Ruby' certification was announced in January 2025 by 80 PLUS's administrating body, CLEAResult, following its endorsement by the Green Grid consortium. 'Ruby' is the most rigorous PSU efficiency standard since the 'Titanium' certification was released 14 years ago. In comparison, Ruby sets an additional 1% system efficiency across all load conditions, except at 50% load (which requires a 0.5% increase), to achieve a new benchmark of 96.5% efficiency.	17.03.2025 07:00:00	Mar	news_2025-04-15_2.jpg	\images\news_2025-04-15_2.jpg	https://navitassemi.com/navitas-enables-data-center-power-supplies-to-achieve-latest-80-plus-ruby-certification/	navitassemi.com
Transducer Electronic Datasheet	At APEC 2025 Danisense launched a Transducer Elect...	12330	Product Release	Transducer Electronic Datasheet	At APEC 2025 Danisense launched a Transducer Electronic Datasheet (TEDS) functionality for its range of current transducers to further streamline lab testing processes. For test engineers, the TEDS offers an enhanced set-up, making the whole processes very quick and easy. In addition, it improves the measurement accuracy in laboratory environments. With the introduction of its "augmented" TEDS, Danisense goes beyond the requirements of the IEEE 1451 standard by offering a wealth of additional data. While the IEEE standard only includes basic details such as transducer type, model, serial number, and turn ratio, Danisense's TEDS provides engineers with expanded parameters that are vital to improving overall performance and ensuring a seamless "Plug & Play" experience. The expanded parameters of Danisense's TEDS include offset data, as well as AC and DC calibration data, allowing engineers to implement compensation loops that enhance the transducer's overall accuracy and performance. Additionally, phase shift data is available, enabling the introduction of phase compensation strategies that extend accuracy over a broader frequency range. The company also incorporates power supply information within TEDS, setting power limits to avoid set-up errors and ensure precise calibration management by including calibration dates and alarms, so users can easily track and schedule regular calibration periods. The new TEDS functionality is available across the range of Danisense current transducers, covering both current and voltage outputs.	16.03.2025 08:30:00	Mar	news_2025-04-01_11.jpg	\images\news_2025-04-01_11.jpg	https://danisense.com/	danisense.com
Magnetics Company: "Preferred Partner" of a Semiconductor Company	Würth Elektronik is broadening its collaboration w...	12327	Industry News	Magnetics Company: "Preferred Partner" of a Semiconductor Company	Würth Elektronik is broadening its collaboration with semiconductor manufacturers. The company, which has collaborated with major industry players for many years, was recently recognized by Infineon as a 'Preferred Partner'. Developers benefit from this partnership by gaining access to over 480 reference designs featuring Infineon chips and compatible components on the Würth Elektronik website: A dedicated section on the Würth Elektronik website provides access to all reference designs for which Infineon uses Würth Elektronik components. The filtering functions allow users to select a reference design optimized for their application. Each design includes a comprehensive description, detailed circuit diagrams, an IC specification, and a bill of materials for the suitable Würth Elektronik components. Developers can request these components as free lab samples or access additional specs via the REDEXPERT simulation platform. The database currently includes over 25,000 Würth Elektronik components.	13.03.2025 13:00:00	Mar	news_2025-04-01_8.jpg	\images\news_2025-04-01_8.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=preferred-partner-infineon	we-online.com
Eliminating the DC-Link Capacitors: Single-Stage Bi-Directional Switch Converters	Navitas has announced "the world's first productio...	12333	Product Release	Eliminating the DC-Link Capacitors: Single-Stage Bi-Directional Switch Converters	Navitas has announced "the world's first production-released 650 V bi-directional GaNFast™ ICs and high-speed isolated gate-drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from two-stage to single-stage topologies". Targeted applications range across EV charging (On-Board Chargers and roadside), solar inverters, energy storage and motor drives. According to Navitas over 70% of today's high-voltage power converters use a 'two-stage' topology. For example, a typical AC-DC EV OBC implements an initial power-factor-correction (PFC) stage and a follow-on DC-DC stage, with bulky 'DC-link' buffering capacitors. Bi-directional GaNFast consolidates the two stages into a single, high-speed, high-efficiency stage and in the process, eliminates the bulky capacitors and input inductors - the ultimate solution in EV OBCs. Previously, two discrete, 'back-to-back' single switches had to be used, but new bi-directional GaNFast ICs are monolithically integrated single-chip designs with a merged drain structure, two gate controls, and a patented, integrated, active substrate clamp. One high-speed, high-efficiency bi-directional GaNFast IC replaces up to 4 older switches, increasing system performance while reducing component count, PCB area, and system costs. The initial 650 V bi-directional GaNFast ICs include NV6427 (100 mΩ R<sub>SS(on) typ</sub>.) and NV6428 (50 mΩ R<sub>SS(on) typ</sub>.) in thermally enhanced, top-side-cooled TOLT-16L (Transistor Outline Leaded Topside-cooled) packaging. The product family will be extended into lower R<sub>SS(on)</sub> offerings in the future. The IsoFast™ devices are galvanically isolated, high-speed drivers optimized to drive bi-directional GaN. Single-stage evaluation boards and user guide showcasing both IsoFast and bi-directional GaNFast ICs are available for qualified customers.	13.03.2025 11:30:00	Mar	news_2025-04-01_14.jpg	\images\news_2025-04-01_14.jpg	https://navitassemi.com/navitas-drives-a-paradigm-shift-in-power-with-single-stage-bi-directional-switch-bds-converters/	navitassemi.com
Customizable High-Current Power Control Solution with Liquid Cooling	Advanced Energy Industries announced its Thyro-PX&...	12346	Product Release	Customizable High-Current Power Control Solution with Liquid Cooling	Advanced Energy Industries announced its Thyro-PX® Modular Solution, a fully configurable, distributed architecture that enables operators to build custom power control with liquid-cooled high-power stacks and external control units to meet their precise needs. The components are designed to meet the requirements of glass manufacturing, arc furnaces, rectifiers, and other high-current heating elements. Configuration options include separating control and power functions to minimize EMC issues. Thyro-PX's silicon-controlled rectifier (SCR) technology controls temperature and power. It offers precise phase angle control and improved efficiency, while reducing costs and CO<sub>2</sub> emissions compared to standard thyristors. Each Thyro-PX control unit can drive up to three high-power water-cooled Thyro-PX stacks. The Thyro-PX Modular Solution directly integrates with common field bus systems, achieving a current accuracy of 0.5%, with simple AC and DC configurations and a voltage range of up to 690 V<sub>AC</sub> (750 V<sub>DC</sub>), with 1,000 V<sub>AC</sub> available on demand.	13.03.2025 09:30:00	Mar	news_2025-04-15_9.png	\images\news_2025-04-15_9.png	https://www.advancedenergy.com/en-us/about/news/press/advanced-energy-introduces-customizable-high-current-power-control-solution-with-liquid-cooling/	advancedenergy.com
President and CEO of Semiconductor Company appointed	Allegro MicroSystems appointed Mike Doogue as Pres...	12323	People	President and CEO of Semiconductor Company appointed	Allegro MicroSystems appointed Mike Doogue as President and Chief Executive Officer and as a member of the Board. Mr. Doogue's ascension to CEO comes after 27 years of rising through the leadership ranks at Allegro, during which time he enabled many of Allegro's disruptive technologies, originally as an engineer and later as a business leader. Immediately prior to this promotion, Mr. Doogue served as Allegro's Executive Vice President and its first Chief Technology Officer (CTO), leading technology development and worldwide operations, which includes manufacturing, procurement, and quality. Mike Doogue also previously served as the Company's Senior Vice President of Technology and Products, which included direct oversight of each of the Company's business units. As a testament to his roots as an engineer and technology innovator, Mr. Doogue personally holds 75 semiconductor-related U.S. patents. Mike Doogue succeeds Vineet Nargolwala, who is stepping down as President and CEO and as a member of the Board.	13.03.2025 09:00:00	Mar	news_2025-04-01_4.jpg	\images\news_2025-04-01_4.jpg	https://investors.allegromicro.com/news-releases/news-release-details/allegro-microsystems-appoints-mike-doogue-president-and-chief/	allegromicro.com
Collaboration on Proprietary Power Electronics for Grid Technology	ENODA and Mersen have been working in collaboratio...	12319	Product Release	Collaboration on Proprietary Power Electronics for Grid Technology	ENODA and Mersen have been working in collaboration on the proprietary power electronics of ENODA's flagship technology, the Enoda PRIME® Exchanger and will exhibit the stack at the upcoming Applied Power Electronics Conference (APEC) in March. The Enoda PRIME Exchanger is a dynamic power flow hardware technology, which can automate and enhance power quality in low-voltage networks. ENODA is solving the fundamental challenge of the energy system: balancing exponentially rising electricity demand using generation sources that are volatile and variable. ENODA technologies can enhance grid stability, improve grid resilience, and accelerate decarbonisation. The Enoda PRIME® Exchanger is a dynamic power flow hardware technology, which can automate and enhance power quality in low-voltage networks. The Prime Exchanger has capabilities including dynamic voltage regulation; it can autonomously balance the three phases, remove damaging harmonics, correct power factor, and can provide decarbonised frequency services at scale. Thanks to Mersen's widely acclaimed expertise in laminated bus bar, cooling, high-speed fuses, film capacitor design, mechatronics, test and manufacturing, Mersen was selected as ENODA's partner to assist during the development phase of the silicon carbide-based power electronics stack. The Enoda PRIME Exchanger's power electronics stack controls the primary electromagnetic subsystem. This in turn, allows for control of all 12 degrees of freedom within the 3 phase signal.	12.03.2025 15:30:00	Mar	news_2025-03-15_19.jpg	\images\news_2025-03-15_19.jpg	https://enodatech.com/	enoda.com
4-Level Buck Converter for Battery Charging Applications	pSemi announced a multi-level technology, which is...	12351	Product Release	4-Level Buck Converter for Battery Charging Applications	pSemi announced a multi-level technology, which is capable of fast battery charging in a low profile (<1 mm) application. The converter operates over an input range from 4.5 V to 18 V covering USB and wireless charging standards. In general, 4-level buck mode is enabled for higher input voltages, and 3-level buck mode for mid-to-low input voltages. Additionally, the device can be operated in fixed ratio, capacitor divider mode with divider ratios 2 and 3 when the input voltage is a programmable power source (PPS). Current delivery is up to 6 A per device, with the option to parallel devices to achieve faster charging times, in all operation modes using a 1 mm height inductor.	12.03.2025 14:30:00	Mar	news_2025-04-15_14.jpg	\images\news_2025-04-15_14.jpg	https://www.psemi.com/2024/06/17/psemi-takes-power-conversion-to-the-next-level-at-apec-2025/	psemi.com
Two additional MOSFET Package Options for High-Current Applications	Alpha and Omega Semiconductor released two surface...	12328	Product Release	Two additional MOSFET Package Options for High-Current Applications	Alpha and Omega Semiconductor released two surface mounting package options for its high power MOSFET portfolio. Designed to meet the robust packaging requirements for the most demanding applications that require increased performance and reliability, the new GTPAK™ and GLPAK™ packages will first be available on AOS' AOGT66909 and AOGL66901 MOSFETs, respectively. The GTPAK offered with the AOGT66909 is a topside cooling package designed with a large exposed pad for more efficient heat transfer. The topside cooling technology transfers most heat to the heat sink mounted on the top exposed pad. This feature allows the GTPAK to offer a more effective thermal dissipation route than going through the PCB board, allowing a lower-cost PCB, such as FR4, to be used. The GLPAK offered with the AOGL66901 is a gull-wing version of AOS' TOLL package. It is designed using AOS' clip technology to achieve a high inrush current rating. The GLPAK with clip technology offers low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding. The GTPAK and GLPAK packages feature gull-wing leads, enabling good solder joint reliability even for insulated metal substrates (IMS) applications. This gull-wing construction also provides enhanced thermal cycling for IMS boards and other critical applications that must meet higher reliability objectives. AOS MOSFETs in the GTPAK and GLPAK packages are manufactured in IATF16949-certified facilities and are compatible with automated optical inspection (AOI) manufacturing requirements.	12.03.2025 06:30:00	Mar	news_2025-04-01_9.jpg	\images\news_2025-04-01_9.jpg	https://www.aosmd.com/news/aos-adds-two-new-advanced-mosfet-package-options-high-current-applications	aosmd.com
3-Phase BLDC Motor Driver	Qorvo added an integrated brushless DC (BLDC) moto...	12336	Product Release	3-Phase BLDC Motor Driver	Qorvo added an integrated brushless DC (BLDC) motor driver to its growing family of power management products. This 160 V, 3-phase gate driver enables smaller solution size and reduces design time as well as bill of material (BOM) cost/count compared to a discrete approach to automotive and industrial motor control. Qorvo's ACT72350 replaces up to 40 discrete components in a BLDC motor control system and offers a configurable AFE, enabling engineers to configure their exact sensing and position detection requirements. It also includes a configurable power manager with an internal DC/DC Buck converter and LDOs to support internal components and serve as an optional supply for the host MCU device. The 25 V to 160 V input range also allows for the reuse of the same design for several battery-operated motor control applications including power and garden tools, drones, EVs and e-bikes. The ACT72350 provides programable propagation delay, precise current sensing and BEMF feedback and differentiated features for safety-critical applications. This SOI-based motor driver is available now in a 9 mm x 9 mm, 57-pin QFN package. An evaluation kit and a QSPICE model of the ACT72350 are also available.	11.03.2025 14:30:00	Mar	news_2025-04-01_17.jpg	\images\news_2025-04-01_17.jpg	https://www.qorvo.com/newsroom/news/2025/qorvo-3-phase-bldc-motor-driver-reduces-solution-size-design-time-and-bom-cost	qorvo.com
Phase 17 Reliability Report: Advancing GaN Reliability and Lifetime Projections	Efficient Power Conversion (EPC) has released its ...	12342	Industry News	Phase 17 Reliability Report: Advancing GaN Reliability and Lifetime Projections	Efficient Power Conversion (EPC) has released its Phase 17 Reliability Report, emphasizing GaN's position as a highly reliable technology for power electronics, automotive, AI, space, and industrial applications. The latest reliability report introduces expanded lifetime models, mission-specific reliability projections, and new physics-based wear-out mechanisms, providing engineers with more accurate and practical reliability data for GaN power devices. The key highlights of the Phase 17 Reliability Report include an expanded gate lifetime model that incorporates gate leakage current effects across voltages and temperatures, leading to enhanced impact ionization modeling as well as repetitive transient gate overvoltage testing which develops and validates a 7 V gate overvoltage rating, addressing resonance-like transient stress in real-world applications. Other highlights include enhanced drain overvoltage robustness, pulsed current rating data (extending testing to over 100 million pulses), a comprehensive thermomechanical lifetime model now including power cycling modeling and mission-specific reliability insights. EPC's test-to-fail methodology continues to push GaN technology beyond traditional silicon MOSFETs. By integrating real-world stress conditions into advanced lifetime models, the Phase 17 report allows for more accurate reliability projections for next-generation power applications.	11.03.2025 10:00:00	Mar	news_2025-04-15_5.jpg	\images\news_2025-04-15_5.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3200/epc-releases-phase-17-reliability-report-advancing-gan-reliability-and-lifetime-projections	epc-co.com
Next Generation of high-density Power Modules for VPD	Infineon Technologies launched the next generation...	12329	Product Release	Next Generation of high-density Power Modules for VPD	Infineon Technologies launched the next generation of high-density power modules which play a pivotal role in enabling AI and high-performance compute. The OptiMOS™ TDM2454xx quad-phase power modules are claimed to "enable best-in-class power density and total-cost-of-ownership (TCO) for AI data centers operators". The OptiMOS TDM2454xx quad-phase power modules enable true vertical power delivery (VPD) and offer a current density of 2 A/mm². The modules follow the OptiMOS TDM2254xD and the OptiMOS TDM2354xD dual-phase power modules introduced by Infineon last year. In traditional horizontal power delivery systems, power needs to travel across the surface of the semiconductor wafer, which can result in higher resistance and significant power loss. Vertical power delivery minimizes the distance that power needs to travel, thereby reducing resistive losses enabling increased system performance. The OptiMOS TDM2454xx modules are a fusion of Infineon's OptiMOS 6 trench technology, chip-embedded package and low-profile magnetic design that continue to push the envelope for performance and quality of VPD systems. Additionally, the OptiMOS TDM2454xx has a footprint that is designed to enable module tiling and improving current flow that enhance electrical, thermal and mechanical performance. The OptiMOS TDM2454xx modules support up to 280 A across four phases with an integrated embedded capacitor layer within a small 10 mm² x 9 mm² form factor.	10.03.2025 07:30:00	Mar	news_2025-04-01_10.jpg	\images\news_2025-04-01_10.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFPSS202503-073.html	infineon.com
Parallel Combination of ICeGaN HEMT and IGBT	Cambridge GaN Devices (CGD) revealed more details ...	12343	Product Release	Parallel Combination of ICeGaN HEMT and IGBT	Cambridge GaN Devices (CGD) revealed more details about a solution that will enable the company to address EV powertrain applications over 100 kW with its ICeGaN® gallium nitride (GaN) technology. Combo ICeGaN combines smart ICeGaN HEMT ICs and IGBTs in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) solutions. The proprietary Combo ICeGaN approach uses the fact that ICeGaN and IGBT devices can be operated in a parallel architecture having similar drive voltage ranges (e. g. 0-20 V) and excellent gate robustness. In operation, the ICeGaN switch is claimed to be very efficient, with low conduction and low switching losses at relatively low currents (light load), while the IGBT is dominant at relatively high currents (towards full load or during surge conditions). Combo ICeGaN also benefits from the high saturation currents and the avalanche clamping capability of IGBTs and the efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT will start to conduct at lower on-state voltages, supplementing the loss of current in the ICeGaN. Conversely, at lower temperatures, ICeGaN will take more current. Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices. ICeGaN technology allows EV engineers to enjoy GaN's benefits in DC/DC converters, on-board chargers and potentially traction inverters. Proprietary parallel combinations of ICeGaN devices with SiC MOSFETs have also been proven by CGD, but Combo ICeGaN – which is now detailed in a published IEDM paper – is said to be "a far more economical solution". CGD expects to have working demos of Combo ICeGaN at the end of this year.	10.03.2025 06:30:00	Mar	news_2025-04-15_6.jpg	\images\news_2025-04-15_6.jpg	https://camgandevices.com/en/p/cgd-announces-breakthrough-100kw+-technology-enabling-gan-to-address-$10b+-ev-inverter-market/	camgandevices.com
Benchmark for 100 V GaN Power Transistors	EPC launches EPC2367, a 100 V eGaN® FET with a...	12331	Product Release	Benchmark for 100 V GaN Power Transistors	EPC launches EPC2367, a 100 V eGaN® FET with an R<sub>DS(on)</sub> of 1.2 m&ohm for power conversion applications. Designed for 48 V intermediate voltage bus architectures, the EPC2367 advances the performance of power systems by reducing power loss, increasing efficiency, and enabling more compact and cost-effective designs. This device is claimed to "set a benchmark in performance compared to both previous-generation GaN and traditional silicon MOSFET solutions". Its footprint measures 3.3 mm × 3.3 mm (QFN package). According to EPC it also provides an "outstanding temperature cycling reliability", which is said to be "4× the thermal cycling capability compared to previous GaN generations". In a 1 MHz, 1.25 kW system, EPC2367 is said to reduce power losses while achieving 1.25× the output power compared to previous GaN and Si MOSFET alternatives. The EPC90164 development board (measuring 2" x 2" or 50.8 mm x 50.8 mm) is a half bridge featuring the EPC2367 GaN FET. It is designed for 80 V maximum operating voltage and 35 A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product's time to market.	08.03.2025 09:30:00	Mar	news_2025-04-01_12.jpg	\images\news_2025-04-01_12.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3201/epc-announces-new-benchmark-for-100-v-gan-power-transistors	epc-co.com
80 V/100 V Power MOSFETs	Taiwan Semiconductor (TSC) has expanded its PerFET...	12337	Product Release	80 V/100 V Power MOSFETs	Taiwan Semiconductor (TSC) has expanded its PerFET%trade; family of power MOSFETs with the addition of 80 V and 100 V versions. "Based on TSC's proprietary PerFET device structures and processes, these 80 V / 100 V N-channel power MOSFETs offer a best-in-class figure of merit (FOM: R<sub>DS(on)</sub>* Q = 184) and an industry-leading 175 °C avalanche rating", the company claims. The AEC-Q-qualified devices are suited for automotive power applications and other non-automotive commercial and industrial power applications. PerFET devices are housed in TSC-designed, industry-standard-size (5 mm x 6 mm) PDFN56U (single/dual) packages whose wettable flank improves solder joint reliability and AOI accuracy during PCB assembly. Six devices comprise the 100 V PerFET series, with single-output current ratings of 50 – 100 A and dual-outputs rated at 31 A. Target applications are 48 V automotive, SMPS, server and telecom, DC/DC converters, motor drives and polarity switches. The 80 V PerFET series also offers six devices. Single-output models feature current ratings of 33 – 110 A and 31 – 33 A for dual-output models. In addition to those targeted by the 100 V series, 80 V PerFETs are suitable for ideal diodes, USB-PD and type-C charger/adapters, UPS, solar inverters, LED lighting and telecommunications power applications.	07.03.2025 15:30:00	Mar	news_2025-04-01_18.jpg	\images\news_2025-04-01_18.jpg	https://www.taiwansemi.com/en/perfet-80v-and-100v-in-pdfn56u-product-family/	taiwansemi.com